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J. M. D. Coey

Publications and source records attributed to J. M. D. Coey.

At least 37 records · Page 2Linked to original sources

New highly-anisotropic Rh-based Heusler compound for magnetic recording

The development of high-density magnetic recording media is limited by the superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat assisted magnetic recording (HAMR) has been developed, rapidly heating the media to the Curie temperature Tc before writing, followed by rapid cooling. Requirements are a suitable Tc, coupled with anisotropic thermal conductivity and hard magnetic properties. Here we introduce Rh2CoSb as a new hard magnet with potential for thin film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJm-3 is combined with a saturation magnetization of μ0Ms = 0.52 T at 2 K (2.2 MJm-3 and 0.44 T at room-temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare-earth free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 μB on Co, which is hybridized with neighbouring Rh atoms with a large spin-orbit interaction. Moreover, the pronounced temperature-dependence of the anisotropy that follows from its Tc of 450 K, together with a high thermal conductivity of 20 Wm-1K-1, makes Rh2CoSb a candidate for development for heat assisted writing with a recording density in excess of 10 Tb/in2.

cond-mat.mtrl-sci↗

Single pulse all-optical toggle switching of magnetization without Gd: The example of Mn2RuxGa

Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographically-inequivalent Mn sublattices. Moreover, we observe the switching at room temperature in samples that are immune to external magnetic fields in excess of 1 T, provided they exhibit compensation above room temperature. Observations of the effect in compensated ferrimagnets without Gd challenges our understanding of all-optical switching. The dynamic behavior indicates that Mn2RuxGa switches in 2 ps or less. Our findings widen the basis for fast optical switching of magnetization and break new ground for engineered materials that can be used for nonvolatile ultrafast switches using ultrashort pulses of light.

cond-mat.mtrl-sci↗

Sub-picosecond exchange-relaxation in the compensated ferrimagnet Mn$_2$Ru$_x$Ga

We study the demagnetization dynamics of the fully compensated half-metallic ferrimagnet Mn$_2$Ru$_x$Ga. While the two antiferromagnetically coupled sublattices are both composed of manganese, they exhibit different temperature dependencies due to their differing local environments. The sublattice magnetization dynamics triggered by femtosecond laser pulses are studied to reveal the roles played by the spin and intersublattice exchange. We find a two-step demagnetization process, similar to the well-established case of Gd(FeCo)$_3$, where the two Mn-sublattices have different demagnetization rates. The behaviour is analysed using a four-temperature model, assigning different temperatures to the two manganese spin baths. Even in this strongly exchange-coupled system, the two spin reservoirs have considerably different behaviour. The half-metallic nature and strong exchange coupling of Mn$_2$Ru$_x$Ga lead to spin angular momentum conservation at much shorter time scales than found for Gd(FeCo)$_3$ which suggests that low-power, sub-picosecond switching of the net moment of Mn$_2$Ru$_x$Ga is possible.

cond-mat.mtrl-sci↗

Neutron imaging of liquid-liquid systems containing paramagnetic salt solutions

The method of neutron imaging was adopted to map the concentration evolution of aqueous paramagnetic Gd(NO3)3 solutions. Magnetic manipulation of the paramagnetic liquid within a miscible nonmagnetic liquid is possible by countering density-difference driven convection. The formation of salt fingers caused by double-diffusive convection in a liquid-liquid system of Gd(NO3)3 and Y(NO3)3 solutions can be prevented by the magnetic field gradient force.

physics.app-ph↗

Magnetization dynamics of the compensated ferrimagnet $Mn_{2}Ru_{x}Ga$

Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of $\sim$160GHz and a low intrinsic Gilbert damping $α$$\sim$0.02, making it a very attractive candidate for various spintronic applications.

cond-mat.mtrl-sci↗

Giant spin-orbit torque in a single ferrimagnetic metal layer

Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to ferromagnets, these materials have not been extensively studied due to difficulties in exciting and detecting the high-frequency spin dynamics, especially in thin films. Here we show that spin-obit torque in a single layer of the highly spin-polarized compensated ferrimagnet Mn2RuxGa is remarkably efficient at generating spin-orbit fields μ_0H_eff, which approach 0.1x10-10 T m2/A in the low-current density limit -- almost a thousand times the Oersted field, and one to two orders of magnitude greater than the effective fields in heavy metal/ferromagnet bilayers. From an analysis of the harmonic Hall effect which takes account of the thermal contributions from the anomalous Nernst effect, we show that the antidamping component of the spin-orbit torque is sufficient to sustain self-oscillation. Our study demonstrates that spin electronics has the potential to underpin energy-frugal, chip-based solutions to the problem of ultra high-speed information transfer.

cond-mat.mes-hall↗

Study of the Effect of Annealing on the Properties of Mn2RuxGa Thin Films

The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnetic anisotropy due to a small 1% tetragonal elongation induced by substrate strain. The main change on annealing is a modification in the compensation temperature, which first increases from 50 K for the as-deposited film to 185 K after annealing at 250 degree Celsius, and then falls to 140 K after annealing at 400 degree Celsius. There are minor changes in the atomic order, coercivity, resistivity and anomalous Hall effect (AHE), but the net magnetization measured by SQUID magnetometry with the field applied in-plane or perpendicular-to-the-plane changes more significantly. It saturates at 20 to 30 kA/m at room temperature, and a small soft component is seen in the perpendicular SQUID loops which is absent in the square AHE hysteresis loops. This is explained by the half-metallic nature of the compound; the AHE probes only the 4c Mn sublattice that provides the spin-polarized electrons at the Fermi level, whereas the SQUID measures the sum of the oppositely-aligned 4c and 4a sublattice magnetisations.

cond-mat.mtrl-sci↗

Magnetic Dead Layers in La$_{0.7}$Sr$_{0.3}$MnO$_3$ Revisited

The magnetic dead layers in films a few nanometers thick are investigated for La$_{0.7}$Sr$_{0.3}$MnO$_3$ on (001)-oriented SrTiO$_3$ (STO), LaAlO$_3$ (LAO) and (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrates. An anomalous moment found to persist above the Curie temperature of the La$_{0.7}$Sr$_{0.3}$MnO$_3$ films is not attributed to the films, but to oxygen vacancies at or near the surface of the substrate. The contribution to the moment from the substrate is as high as 20 $μ$B/nm$^2$ in the case of STO or LSAT. The effect is increased by adding an STO cap layer. Taking this d-zero magnetism into account, extrapolated magnetic dead layer thicknesses of 0.8 nm, 1.5 nm and 3.0 nm are found for the manganite films grown on LSAT, STO and LAO substrates, respectively. An STO cap layer eliminates the LSMO dead layer.

cond-mat.mtrl-sci↗

Imaging Domains in a Zero-Moment Half Metal

We have a choice of methods for examining domains at the surface of a ferromagnet that depend on probing the stray field distribution, but these methods do not work in antiferromagnets or compensated ferrimagnets, which produce no stray field. The discovery of compensated ferrimagnetic half-metals allows for the local magnetization state to be observed directly with polarized light. The example considered here, Mn$_{2}$Ru$_{x}$Ga, has two inequivalent but oppositely-aligned Mn sublattices with equal and opposite moments, but only one of them contributes spin polarized conduction electrons at the Fermi energy. The material looks like an antiferromagnet from the outside, but from the point of view of electronic structure it resembles a spin-polarized ferromagnetic metal. The anisotropy axis is perpendicular to the film plane, which allows domains to be imaged directly by polar magneto-optic Kerr effect. The domain structure in a film with a composition of Mn$_{2}$Ru$_{0.4}$Ga has been imaged in a Kerr microscope and hysteresis loops traced. Domains have dimensions of order 20 μm with meandering domain walls and a fractal dimension D$_{f}$ = 1.85. Our results open new direct imaging possibilities for magnetically-ordered materials with no net moment.

cond-mat.mtrl-sci↗

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces.

cond-mat.str-el↗

Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3$ and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.

cond-mat.mtrl-sci↗

Magneto-optic Kerr effect in a spin-polarized zero-moment ferrimagnet

The magneto-optical Kerr effect (MOKE) is often assumed to be proportional to the magnetisation of a magnetically ordered metallic sample; in metallic ferrimagnets with chemically distinct sublattices, such as rare-earth transition-metal alloys, it depends on the difference between the sublattice contributions. Here we show that in a highly spin polarized, fully compensated ferrimagnet, where the sublattices are chemically similar, MOKE is observed even when the net moment is strictly zero. We analyse the spectral ellipsometry and MOKE of Mn 2 Ru x Ga, and show that this behaviour is due to a highly spin-polarized conduction band dominated by one of the two manganese sublattices which creates helicity-dependent reflectivity determined by a broad Drude tail. Our findings open new prospects for studying spin dynamics in the infra-red.

cond-mat.mtrl-sci↗

d-zero Magnetism in Nanoporous Amorphous Alumina Membranes

Nanoporous alumina membranes produced by mild or hard anodisation in oxalic acid at potentials ranging from 5 - 140 V have a controllable pore surface area of up to 200 times the membrane area. They exhibit a saturating magnetic response that is temperature-independent and almost anhysteretic below room temperature. The magnetism cannot be explained by the ~1 ppm of transition-metal impurities present in the membranes. The magnetic moment increases with the area of the open nanopores, reaching values of 0.6 Bohr magnetons per square nanometer for mild anodisation and 8 muB/nm2 for hard anodisation where the growth rate is faster. Crystallization of the membrane or chemical treatment with salicylic acid reduces the effect by up to 90 %. The magnetism is therefore associated with the open pore surfaces of the amorphous Al2O3, and it is independent of the orientation of the applied field with respect to the membrane surface. Possible explanations in terms of electrons associated with oxygen vacancies (F or F+ centres) are discussed and it is concluded that the effect is due to giant orbital paramagnetism rather than collective ferromagnetic spin order.

cond-mat.mtrl-sci↗

Magnetization and Anisotropy of Cobalt Ferrite Thin Films

The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kAm-1, which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 muB that is associated with the octahedrally-coordinated Co2+ ions. The orbital moment is responsible for the magnetostriction and magnetocrystalline anisotropy, and its sensitivity to imposed strain. We have systematically investigated the structure and magnetism of films produced by pulsed-laser deposition on different substrates (TiO2, MgO, MgAl2O4, SrTiO3, LSAT, LaAlO3) and as a function of temperature (500-700 C) and oxygen pressure (10-4 - 10 Pa). Magnetization at room-temperature ranges from 60 to 440 kAm-1, and uniaxial substrate-induced anisotropy ranges from +220 kJm-3 for films on deposited on MgO (100) to -2100 kJm-3 for films deposited on MgAl2O4 (100), where the room-temperature anisotropy field reaches 14 T. No rearrangement of high-spin Fe3+ and Co2+ cations on tetrahedral and octahedral sites can reduce the magnetization below the bulk value, but a switch from Fe3+ and Co2+ to Fe2+ and low-spin Co3+ on octahedral sites will reduce the low-temperature magnetization to 120 kAm-1, and a consequent reduction of Curie temperature can bring the room-temperature value to near zero. Possible reasons for the appearance of low-spin cobalt in the thin films are discussed. Keywords; Cobalt ferrite, thin films, pulsed-laser deposition, low-spin Co3+, strain engineering of magnetization.

cond-mat.mtrl-sci↗

Electrical Properties and Subband Occupancy at the (La,Sr)(Al,Ta)O$_3$/SrTiO$_3$ Interface

The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons ($μ_1\approx{10^4}$ cm$^2$V$^{-1}$s$^{-1}$ at 2 K) occupy the lower-energy $3d_{xy}$ subband, while lower-mobility electrons ($μ_1\approx{10^3}$ cm$^{2}$V$^{-1}$s$^{-1}$ at 2 K) propagate in the higher-energy $3d_{xz/yz}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas (SdH) oscillations below 9 T at 2 K and an effective mass of $0.7m_e$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50,000$ cm$^{2}$V$^{-1}$s$^{-1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces.

cond-mat.str-el↗

Exchange coupling of a perpendicular ferromagnet to a half-metallic compensated ferrimagnet via a thin hafnium interlayer

A thin Hafnium film is shown to act both as an effective diffusion barrier for manganese at a thickness of 0.7 nm, and as an effective exchange coupling layer in a sandwich structure with perpendicular magnetic anisotropy. The magnetic layers are Co$_{20}$Fe$_{60}$B$_{20}$ and the low moment ferrimagnet Mn$_2$Ru$_x$Ga (MRG). The coupling changes sign at the compensation temperature of MRG and the exchange energy reaches 0.11 mJm$^{-2}$ for the thinnest Hf interlayers. Ruthenium, the usual metal of choice for coupling ferromagnetic layers in thin film heterostructures, cannot be used with the zero-moment half metal MRG because of Ru interdiffusion. Due to its large coercivity near compensation, the MRG can act as an effective source of exchange pinning.

cond-mat.mtrl-sci↗

Structure, site-specific magnetism and magneto-transport properties of epitaxial D0$_{22}$ Mn$_2$Fe$_x$Ga thin films

Ferrimagnetic Mn$_2$Fe$_x$Ga $(0.26 \leq x \leq 1.12)$ thin films have been characterised by X-ray diffraction, SQUID magnetometry, X-ray absorption spectroscopy, X-ray magnetic circular dichroism and Mössbauer spectroscopy with the aim of determining the structure and site-specific magnetism of this tetragonal, D0$_{22}$-structure Heusler compound. High-quality epitaxial films with low RMS surface roughness ($\sim 0.6$ nm) are grown by magnetron co-sputtering. The tetragonal distortion induces strong perpendicular magnetic anisotropy along the $c$-axis with a typical coercive field $μ_0 H\sim 0.8$ T and an anisotropy field ranging from $6$ to $8$ T. Upon increasing the Fe content $x$, substantial uniaxial anisotropy, $K_\mathrm{u} \geq 1.0$ MJ/m$^3$ can be maintained over the full $x$ range, while the magnetisation of the compound is reduced from $400$ to $280$ kA/m. The total magnetisation is almost entirely given by the sum of the spin moments originating from the ferrimagnetic Mn and Fe sublattices, with the latter being coupled ferromagnetically to one of the former. The orbital magnetic moments are practically quenched, and have negligible contributions to the magnetisation. The films with $x=0.73$ exhibit a high anomalous Hall angle of $2.5$ % and a high Fermi-level spin polarisation, above $51$ %, as measured by point contact Andreev reflection. The Fe-substituted Mn$_2$Ga films are highly tunable with a unique combination of high anisotropy, low magnetisation, appreciable spin polarisation and low surface roughness, making them very strong candidates for thermally-stable spin-transfer-torque switching nanomagnets with lateral dimensions down to $10$ nm.

cond-mat.mtrl-sci↗

Surface magnetism of strontium titanate

SrTiO3 plays a central role in oxide electronics. It is the substrate of choice for functional oxide heterostructures based on perovskite-structure thin-film stacks, and its surface or interface with a polar oxide such as LaAlO3 can become a two-dimensional conductor because of electronic reconstruction or the presence of oxygen defects. Inconsistent reports of magnetic order in SrTiO3 abound in the literature. Here we report a systematic experimental study aimed at establishing how and when SrTiO3 can develop a magnetic moment at room temperature. Polished 100, 110 or 111 crystal slices from four different suppliers are characterized before and after vacuum annealing at 750 °C, both in single-crystal and powdered form. Impurity content is analysed at the surface and in the bulk. Besides the underlying intrinsic diamagnetism of SrTiO3, magnetic signals are of three types-a Curie law susceptibility due to dilute magnetic impurities at the ppm level, a hysteretic, temperature-dependent ferromagnetic impurity contribution, and a practically-anhysteretic, defect-related temperature-independent component that saturates in about 200 mT. The latter component is intrinsic. It is often the largest, reaching 10 Bohr magnetons per nm2 of surface area or more and dominating the magnetic response in low fields at room temperature. It is associated with defects near the surface, and can be destroyed by treatment with Tiron (C6H4Na2O8S2), an electron donor molecule that forms a strong complex with titanium at the surface. The origin of this unusual high-temperature ferromagnetic-like response is discussed.

cond-mat.mtrl-sci↗