arXiv subjects

J. M. Elzerman

Publications and source records attributed to J. M. Elzerman.

At least 19 recordsLinked to original sources

arXiv2012

Decoherence-avoiding spin qubits in optically active quantum dot molecules

In semiconductors, the T2* coherence time of a single confined spin is limited either by the fluctuating magnetic environment (via the hyperfine interaction), or by charge fluctuations (via the spin-orbit interaction). We demonstrate that both limitations can be overcome simultaneously by using two exchange-coupled electron spins that realize a single decoherence-avoiding qubit. Using coherent population trapping, we generate a coherent superposition of the singlet and triplet states of an optically active quantum-dot molecule, and show that the corresponding T2* may exceed 200 nanoseconds.

cond-mat.mes-hall↗

arXiv2010

A coupled quantum dot laser amplifier: Raman transitions between spin singlet and triplet states

A holy grail of photonics research is the realization of a laser that uses a single quantum emitter as the gain medium. Such a device would exhibit a plethora of new features, including lasing without a well-defined threshold and output intensity fluctuations that remain below the shot-noise limit. While single-atom lasers have been demonstrated, compact devices capable of continuous-wave operation require monolithic structures involving a solid-state quantum emitter. Here, we report the observation of steady-state laser amplification in Raman transitions between the lowest-energy entangled spin states of a quantum-dot molecule. Absorption and resonance fluorescence experiments demonstrate that the singlet and triplet states have electric-dipole coupling to a common optically excited state. Fast spin relaxation ensures population inversion on the triplet transition when the singlet transition is driven resonantly. By embedding the quantum-dot molecule in a cavity of modest quality factor, a solid-state single-emitter laser could be realized.

cond-mat.mes-hall↗

arXiv2005

Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field

We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarizes the nuclei, resulting in striking bistabilities. We extract from the fluctuating nuclear field a limitation on the time-averaged spin coherence time T2* of 25 ns. Control of the electron-nuclear interaction will therefore be crucial for the coherent manipulation of individual electron spins.

cond-mat.mes-hall↗

arXiv2005

Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates

We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing read-out of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2004

Semiconductor few-electron quantum dot operated as a bipolar spin filter

We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron Zeeman splitting is clearly resolved at both the zero-to-one and the one-to-two electron transition. Since the spin of the electrons transmitted through the dot is opposite at these two transitions, this device can be employed as an electrically tunable, bipolar spin filter. Calculations and measurements show that higher-order tunnel processes and spin-orbit interaction have a negligible effect on the polarization.

cond-mat.mes-hall↗

arXiv2004

Single-shot read-out of an individual electron spin in a quantum dot

Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications ranging from magnetic resonance imaging to magneto-electronic devices, while individual spins are considered as carriers for quantum information. Read-out of single spin states has been achieved using optical techniques, and is within reach of magnetic resonance force microscopy. However, electrical read-out of single spins has so far remained elusive. Here, we demonstrate electrical single-shot measurement of the state of an individual electron spin in a semiconductor quantum dot. We use spin-to-charge conversion of a single electron confined in the dot, and detect the single-electron charge using a quantum point contact; the spin measurement visibility is ~65%. Furthermore, we observe very long single-spin energy relaxation times (up to 0.85 ms at a magnetic field of 8 Tesla), which are encouraging for the use of electron spins as carriers of quantum information.

cond-mat.mes-hall↗

arXiv2004

Determination of the tunnel rates through a few-electron quantum dot

We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method at the one-to-two electron transition where the electron states are known exactly. By comparing the obtained expressions to experimental data, the tunnel rates for six transitions are extracted. We find that these rates depend strongly on the spin and orbital states involved in the tunnel process.

cond-mat.mes-hall↗

arXiv2004

Real-time detection of single electron tunneling using a quantum point contact

We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is monitored with an IV-convertor at room temperature. We can resolve tunnel events separated by only 8 $μ$s, limited by noise from the IV-convertor. Shot noise in the QPC sets a 25 ns lower bound on the accessible timescales.

cond-mat.mes-hall↗

arXiv2003

Excited-state spectroscopy on a nearly-closed quantum dot via charge detection

We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a reservoir. The effective tunnel rate depends on the number and nature of the energy levels in the dot made accessible by the pulse. Measurement of the charge dynamics thus reveals the energy spectrum of the dot, as demonstrated for a dot in the few-electron regime.

cond-mat.mes-hall↗

arXiv2003

Zeeman energy and spin relaxation in a one-electron quantum dot

We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage pulses, we can populate the excited spin state with one electron and monitor relaxation of the spin. We find a lower bound on T1 of 50 microseconds at 7.5 T, only limited by our signal-to-noise ratio. A continuous measurement of the charge on the dot has no observable effect on the spin relaxation.

cond-mat.mes-hall↗

arXiv2003

Measurement efficiency and n-shot read out of spin qubits

We consider electron spin qubits in quantum dots and define a measurement efficiency e to characterize reliable measurements via n-shot read outs. We propose various implementations based on a double dot and quantum point contact (QPC) and show that the associated efficiencies e vary between 50% and 100%, allowing single-shot read out in the latter case. We model the read out microscopically and derive its time dynamics in terms of a generalized master equation, calculate the QPC current and show that it allows spin read out under realistic conditions.

cond-mat.mes-hall↗

arXiv2002

Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out

We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.

cond-mat.mes-hall↗

arXiv2002

Quantum Computing with Electron Spins in Quantum Dots

We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of electron charges on the dot via a charge detector. Single-qubit manipulation relies on a microfabricated wire located close to the quantum dot, and two-qubit interactions are controlled via the tunnel barrier connecting the respective quantum dots. Based on these ideas, we have begun a series of experiments in order to demonstrate unitary control and to measure the coherence time of individual electron spins in quantum dots.

quant-ph↗

arXiv2002

Electron transport through double quantum dots

Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show that the double dot geometry allows for an accurate determination of the intrinsic lifetime of discrete energy states in quantum dots. The evolution of discrete energy levels in magnetic field is studied. The resolution allows to resolve avoided crossings in the spectrum of a quantum dot. With microwave spectroscopy it is possible to probe the transition from ionic bonding (for weak inter-dot tunnel coupling) to covalent bonding (for strong inter-dot tunnel coupling) in a double dot artificial molecule. This review on the present experimental status of double quantum dot studies is motivated by their relevance for realizing solid state quantum bits.

cond-mat.mes-hall↗

arXiv2002

Kondo effect out of equilibrium in a mesoscopic device

We study the non-equilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the creation of a double-step Fermi distribution function in the wire. Kondo correlations are strongly suppressed when the voltage across the wire exceeds the Kondo temperature. A perpendicular magnetic field enables us to selectively control the coupling between the dot and the two Fermi seas in the wire. Already at fields of order 0.1 T only the Kondo resonance associated with the strongly coupled reservoir survives.

cond-mat.mes-hall↗

arXiv2001

Two-stage Kondo effect in a quantum dot at high magnetic field

We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.

cond-mat.mes-hall↗

arXiv2001

Electro-magnetic Aharonov-Bohm effect in a 2-D electron gas ring

We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is modified using a perpendicular magnetic field and a bias voltage. We observe clear Aharonov-Bohm oscillations up to the quantum Hall regime as a function of both parameters. The electron travel time between the barriers is found to increase with the applied magnetic field. Introducing a scattering model, we develop a new method to measure the non-equilibrium electron dephasing time, which becomes very short at high voltages and magnetic fields. The relevance of electron-electron interactions is discussed.

cond-mat.mes-hall↗

arXiv2000

Electron Cotunneling in a Semiconductor Quantum Dot

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.

cond-mat.mes-hall↗