arXiv subjects

J. Mangeney

Publications and source records attributed to J. Mangeney.

12 recordsLinked to original sources

arXiv2025

Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs

Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in a single layered device through an infinitely diverse set of quantum materials. However, most efforts have only focused on exfoliated material that inherently limits both the dimensions of the materials and the scalability for applications. Here, we show the epitaxial growth of large area heterostructures of topological insulators (Bi2Se3), transition metal dichalcogenides (TMDs, WSe2) and ferromagnets (Co), resulting in the combination of functionalities including tuneable optical nonlinearities, spin-to-charge conversion and magnetic proximity effects. This is demonstrated through coherent phase resolved terahertz currents, bringing novel functionalities beyond those achievable in simple homostructures. In particular, we show the role of different TMD polymorphs, with the simple change of one atomic monolayer of the artificial material stack entirely changing its optical, electrical and magnetic properties. This epitaxial integration of diverse two-dimensional materials offers foundational steps towards diverse perspectives in quantum material engineering, where the material polymorph can be controlled at technological relevant scales for coupling applications in, for example, van der Waals nonlinear optics, optoelectronics, spintronics, multiferroics and coherent current control.

cond-mat.mtrl-sci↗

arXiv2023

Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures

Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.

cond-mat.mtrl-sci↗

arXiv2023

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.

cond-mat.mtrl-sci↗

arXiv2022

Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin-phonon interactions

Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in low damping thin films of NiO/Pt. We evidence, experimentally and through modelling, two excitation processes of magnetization dynamics in NiO, an off-resonant instantaneous optical spin torque and a strain-wave-induced THz torque induced by ultrafast Pt excitation. Both phenomena lead to the emission of a THz signal through the inverse spin Hall effect in the adjacent heavy metal layer. We unravel the characteristic timescales of the two excitation processes found to be < 50 fs and > 300 fs, respectively, and thus open new routes towards the development of fast opto-spintronic devices based on antiferromagnetic materials.

cond-mat.mes-hall↗

arXiv2022

Ultrafast spin-charge conversion at SnBi$_2$Te$_4$/Co topological insulator interfaces probed by terahertz emission spectroscopy

Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insultator (TI)/ferromagnetic junction - SnBi$_2$Te$_4$/Co - specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi$_2$Te$_3$. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers.

cond-mat.mtrl-sci↗

arXiv2022

Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers

Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures through a multi-pronged approach, taking advantage of material and interface engineering to enhance the THz spintronic emission. This includes: the application of multi-stacks of HM/FM junctions and their application to trilayer structures, the use of spin-sinks to simultaneously enhance the THz emitted fields and reduce the use of thick Pt layers to reduce optical absorption, and the use of semi-metals to increase the spin polarization and thus the THz emission. Through these approaches, significant enhancements of the THz field can be achieved. Importantly, taking into account the optical absorption permits to elucidate novel phenomena such as the relation between the spin diffusion length and the spin-sink using THz spectroscopy, as well as possibly distinguishing between self and interface spin-to-charge conversion in semi-metals.

cond-mat.mtrl-sci↗

arXiv2020

Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy

Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion.

physics.app-ph↗

arXiv2020

Ultrasensitive Photoresponse of Graphene Quantum Dot in the Coulomb Blockade Regime to THz Radiation

Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $\sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.

cond-mat.mes-hall↗

arXiv2020

Mutually synchronized macroscopic Josephson oscillations demonstrated by polarization analysis of superconducting terahertz emitters

We demonstrate mutual synchronization of Josephson oscillations in multiple stacks of intrinsic Josephson junctions of the cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta }$. Detailed analysis of the full polarization parameters allows the determination of a phase correlation between the stacks: a simultaneous emission state is described by a linear combination of individual emission states with a phase retardation. This proves that the stacks are coupled via a Josephson plasma in a superconducting substrate and the coupling matrices can be extracted from polarization analyses. Our findings suggest a route towards the realization of high-power terahertz sources based on the synchronization of a large number of intrinsic Josephson junctions.

cond-mat.supr-con↗

arXiv2019

Giant optical nonlinearity cancellation in quantum wells

Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.

physics.optics↗

arXiv2018

2D materials coupled to hybrid metal-dielectric waveguides for THz technology

In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the strength of in-plane electric field components is maximized at the top of the dielectric strip on which the 2D material is deposited. Our simulation predicts 100 % modulation of THz light by tuning the Fermi level of a graphene sheet deposited onto a 1mm-long waveguide. We also show the potential of graphene multilayers coupled to these waveguides for achieving lasing at THz frequency. Our approach is compatible with CMOS or THz quantum cascade laser technologies.

physics.optics↗

arXiv2014

Room temperature broadband coherent terahertz emission induced by dynamical photon drag in graphene

Nonlinear couplings between photons and electrons in new materials give rise to a wealth of interesting nonlinear phenomena. This includes frequency mixing, optical rectification or nonlinear current generation, which are of particular interest for generating radiation in spectral regions that are difficult to access, such as the terahertz gap. Owing to its specific linear dispersion and high electron mobility at room temperature, graphene is particularly attractive for realizing strong nonlinear effects. However, since graphene is a centrosymmetric material, second-order nonlinearities a priori cancel, which imposes to rely on less attractive third-order nonlinearities. It was nevertheless recently demonstrated that dc-second-order nonlinear currents as well as ultrafast ac-currents can be generated in graphene under optical excitation. The asymmetry is introduced by the excitation at oblique incidence, resulting in the transfer of photon momentum to the electron system, known as the photon drag effect. Here, we show broadband coherent terahertz emission, ranging from about 0.1-4 THz, in epitaxial graphene under femtosecond optical excitation, induced by a dynamical photon drag current. We demonstrate that, in contrast to most optical processes in graphene, the next-nearest-neighbor couplings as well as the distinct electron-hole dynamics are of paramount importance in this effect. Our results indicate that dynamical photon drag effect can provide emission up to 60 THz opening new routes for the generation of ultra-broadband terahertz pulses at room temperature.

physics.optics↗