SearcharxivSearch

arXiv subjects

J. Matsuno

Publications and source records attributed to J. Matsuno.

13 recordsLinked to original sources

Condensation of cometary silicate dust using an induction thermal plasma system I. Enstatite and CI chondritic composition

Glass with embedded metal and sulfides (GEMS) is a major component of chondritic porous interplanetary dust particles. Although GEMS is one of the most primitive components in the Solar System, its formation process and conditions have not been constrained. We performed condensation experiments of gases in the system of Mg-Si-O (MgSiO3 composition) and of the S-free CI chondritic composition (Si-Mg-Fe-Na-Al-Ca-Ni-O system) in induction thermal plasma equipment. Amorphous Mg-silicate particles condensed in the experiments of the Mg-Si-O system, and their grain size distribution depended on the experimental conditions (mainly partial pressure of SiO). In the CI chondritic composition experiments, irregularly shaped amorphous silicate particles of less than a few hundred nanometers embedded with multiple Fe-Ni nanoparticles of ~<20 nm were successfully synthesized. These characteristics are very similar to those of GEMS, except for the presence of FeSi instead of sulfide grains. We propose that the condensation of amorphous silicate grains smaller than a few tens of nanometers and with metallic cores, followed by coagulation, could be the precursor material that forms GEMS prior to sulfidation.

astro-ph.EP

Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films

Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films adopting molecular beam epitaxy. The highest electron mobility ($μ$ = 3 $\times$ 10$^{4}$ cm$^{2}$/Vs) among the reported film samples has been achieved at a low carrier density ($\textit{n} = 5$ $\times$ 10$^{16}$ cm$^{-3}$). In the magnetotransport measurement, Hall plateau-like structures are commonly observed in spite of the 3D thick films ($\textit{t} = 120$ nm). On the other hand, field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation.

cond-mat.mtrl-sci

Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This transition occurs when the spin-orbit-coupled $j_{\rm eff}$=1/2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the $Γ$(0,0,0)-R($π$,$π$,$π$) direction is found to play a crucial role in the metallic characteristics of SrIrO$_3$. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO$_3$ and $k_z$-dependent oscillations of photoelectron intensity in Sr$_3$Ir$_2$O$_7$. In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the $k$-resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed $k$-space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a non-realistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.

cond-mat.str-el

Interface-driven topological Hall effect in SrRuO$_3$-SrIrO$_3$ bilayer

Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO$_3$ and paramagnetic SrIrO$_3$ over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO$_3$, ending up with the complete disappearance at 7 unit cells of SrRuO$_3$. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO$_3$. Such interaction is expected to realize the Néel-type magnetic skyrmion, of which size is estimated to be $\sim$10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics.

cond-mat.str-el

Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators

The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi level EF position. Here we exemplify a coefficient of qICS to characterize the interface C-S conversion effect by using spin torque ferromagnetic resonance (ST-FMR) for (Bi1-xSbx)2Te3 thin films whose EF is tuned across the band gap. In bulk insulating conditions, interface C-S conversion effect via Dirac surface state is evaluated as nearly constant large values of qICS, reflecting that the qICS is inversely proportional to the Fermi velocity vF that is almost constant. However, when EF traverses through the Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy of surface spins or instability of helical spin structure. These results demonstrate that the fine tuning of the EF in TI based heterostructures is critical to maximizing the efficiency using the spin-momentum locking mechanism.

cond-mat.mtrl-sci

Two-dimensional Heisenberg behavior of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insulator Sr2IrO4

Dynamical correlations of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insu- lator Sr2IrO4 was revealed by resonant magnetic x-ray diffuse scattering. We found two-dimensional antiferromagnetic fluctuation with a large in-plane correlation length exceeding 100 lattice spacings at even 20 K above the mangnetic ordering temperature. In marked contrast to the naive expecta- tion of strong magnetic anisotropy associated with an enhanced spin-orbit coupling, we discovered isotropic isospin correlation that is well described by the two-dimensional S = 1/2 quantum Heisen- berg model. The estimated antiferromagnetic coupling constant as large as J ~ 0.1 eV that is comparable to the small Mott gap (< 0.5 eV) points the weak and marginal Mott character of this spin-orbital entangled system.

cond-mat.str-el

Anomalous metallic state in the vicinity of Metal to Valence Bond Solid insulator transition in LiVS2

We investigate LiVS2 and LiVSe2 with a triangular lattice as itinerant analogues of LiVO2, known for the formation of valence bond solid (VBS) state out of S = 1 frustrated magnet. LiVS2, which is located at the border between a metal and a correlated insulator, shows a first ordered transition from a paramagnetic metal to a VBS insulator at Tc ~ 305 K upon cooling. The presence of VBS state in the close vicinity of insulator-metal transition may suggest the importance of itinerancy in the formation of VBS state. We argue that the high temperature metallic phase of LiVS2 has a pseudo-gap, likely originating from the VBS fluctuation. LiVSe2 was found to be a paramagnetic metal down to 2 K.

cond-mat.str-el

Sr$_2$(Ba$_2$)VO$_4$ under pressure -- an orbital switch and potential $d^1$ superconductor

We study Sr$_2$(Ba$_2$)VO$_4$ under high pressure by means of the local density approximation + dynamical mean field theory method. While Sr$_2$VO$_4$ is a 1/6-filling three-band system at ambient pressure with a small level splitting between the $d_{xy}$- and $d_{yz/zx}$-bands, we show that an orbital polarization occurs under uniaxial pressure, resulting in dramatic changes of the magnetic, optical, and transport properties. When pressure is applied in the $c$-direction, a $d^1$ analog of $d^9$ cuprates is realized, making Sr$_2$(Ba$_2$)VO$_4$ a possible candidate for a $d^1$ superconductor. Experimentally, this uniaxial pressure can be realized by growing Ba$_2$VO$_4$ on a substrate with lattice constant 4.1-4.2 Å.

cond-mat.str-el

Different routes to charge disproportionation in perovskites-type Fe oxides

Iron perovskites CaFeO_3 and La_{0.33}Sr_{0.67}FeO_3 show charge disproportionation, resulting in charge-ordered states with Fe^{3+}:Fe^{5+} =1:1 and =2:1, respectively. We have made photoemission and unrestricted Hartree-Fock band-structure calculation of CaFeO_3 and compared it with La_{0.33}Sr_{0.67}FeO_3. With decreasing temperature, a gradual decrease of the spectral weight near the Fermi level occurred in CaFeO_3 as in La_{0.33}Sr_{0.67}FeO_3 although lattice distortion occurs only in CaFeO_3. Hartree-Fock calculations have indicated that both the breathing and tilting distortions are necessary to induce the charge disproportionation in CaFeO_3, while no lattice distortion is necessary for the charge disproportionation in La_{0.33}Sr_{0.67}FeO_3.

cond-mat.str-el

Chemical potential shift in La(1-x)Sr(x)MnO(3): Photoemission test of the phase separation scenario

We have studied the chemical potential shift in La(1-x)Sr(x)MnO(3) as a function of doped hole concentration by core-level x-ray photoemission. The shift is monotonous, which means that there is no electronic phase separation on a macroscopic scale, whereas it is consistent with the nano-meter scale cluster formation induced by chemical disorder. Comparison of the observed shift with the shift deduced from the electronic specific heat indicates that hole doping in La(1-x)Sr(x)MnO(3) is well described by the rigid-band picture. In particular no mass enhancement toward the metal-insulator boundary was implied by the chemical potential shift, consistent with the electronic specific heat data.

cond-mat.str-el

Chemical Potential Shift in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$: Contrasting Behaviors of the Electron- and Hole-Doped Cuprates

We have studied the chemical potential shift in the electron-doped superconductor Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ by precise measurements of core-level photoemission spectra. The result shows that the chemical potential monotonously increases with electron doping, quite differently from La$_{2-x}$Sr$_{x}$CuO$_{4}$, where the shift is suppressed in the underdoped region. If the suppression of the shift in La$_{2-x}$Sr$_{x}$CuO$_{4}$ is attributed to strong stripe fluctuations, the monotonous increase of the chemical potential is consistent with the absence of stripe fluctuations in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. The chemical potential jump between Nd$_{2}$CuO$_{4}$ and La$_{2}$CuO$_{4}$ is found to be much smaller than the optical band gaps.

cond-mat.supr-con

Electronic structure of spinel-type LiV_2O_4

The band structure of the cubic spinel compound LiV_2O_4, which has been reported recently to show heavy Fermion behavior, has been calculated within the local-density approximation using a full-potential version of the linear augmented-plane-wave method. The results show that partially-filled V 3d bands are located about 1.9 eV above the O 2p bands and the V 3d bands are split into a lower partially-filled t_{2g} complex and an upper unoccupied e_{g} manifold. The fact that the conduction electrons originate solely from the t_{2g} bands suggests that the mechanism for the mass enhancement in this system is different from that in the 4f heavy Fermion systems, where these effects are attributed to the hybridization between the localized 4f levels and itinerant spd bands.

cond-mat.str-el

Doping Dependence of the Electronic Structure of Ba_{1-x}K_{x}BiO_{3} Studied by X-Ray Absorption Spectroscopy

We have performed x-ray absorption spectroscopy (XAS) and x-ray photoemission spectroscopy (XPS) studies of single crystal Ba_{1-x}K_{x}BiO_{3} (BKBO) covering the whole composition range $0 \leq x \leq 0.60$. Several features in the oxygen 1\textit{s} core XAS spectra show systematic changes with $x$. Spectral weight around the absorption threshold increases with hole doping and shows a finite jump between $x=0.30$ and 0.40, which signals the metal-insulator transition. We have compared the obtained results with band-structure calculations. Comparison with the XAS results of BaPb_{1-x}Bi_{x}O_{3} has revealed quite different doping dependences between BKBO and BPBO. We have also observed systematic core-level shifts in the XPS spectra as well as in the XAS threshold as functions of $x$, which can be attributed to a chemical potential shift accompanying the hole doping. The observed chemical potential shift is found to be slower than that predicted by the rigid band model based on the band-structure calculations.

cond-mat.supr-con