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J. P. Eisenstein

Publications and source records attributed to J. P. Eisenstein.

At least 19 recordsLinked to original sources

Precursors to Exciton Condensation in Quantum Hall Bilayers

Tunneling spectroscopy reveals evidence for interlayer electron-hole correlations in quantum Hall bilayer two-dimensional electron systems at layer separations near, but above, the transition to the incompressible exciton condensate at total Landau level filling $ν_T=1$. These correlations are manifested by a non-linear suppression of the Coulomb pseudogap which inhibits low energy interlayer tunneling in weakly-coupled bilayers. The pseudogap suppression is strongest at $ν_T=1$ and grows rapidly as the critical layer separation for exciton condensation is approached from above.

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Interlayer Interactions and the Fermi Energy of Bilayer Composite Fermion Metals

When two 2D electron gas layers, each at Landau level filling factor $ν=1/2$, are close together a condensate of interlayer excitons emerges at low temperature. Although the excitonic phase is qualitatively well understood, the incoherent phase just above the critical layer separation is not. Using a combination of interlayer tunneling spectroscopy and conventional transport, we explore the incoherent phase in samples both near the phase boundary and further from it. In the more closely spaced bilayers we find the electronic spectral functions narrower and the Fermi energy of the $ν= 1/2$ composite fermion metal smaller than in the more widely separated bilayers. We attribute these effects to a softening of the intralayer Coulomb interaction due to interlayer screening.

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Tunnel transport and interlayer excitons in bilayer fractional quantum Hall systems

In a bilayer system consisting of a composite-fermion Fermi sea in each layer, the tunnel current is exponentially suppressed at zero bias, followed by a strong peak at a finite bias voltage $V_{\rm max}$. This behavior, which is qualitatively different from that observed for the electron Fermi sea, provides fundamental insight into the strongly correlated non-Fermi liquid nature of the CF Fermi sea and, in particular, offers a window into the short-distance high-energy physics of this state. We identify the exciton responsible for the peak current and provide a quantitative account of the value of $V_{\rm max}$. The excitonic attraction is shown to be quantitatively significant, and its variation accounts for the increase of $V_{\rm max}$ with the application of an in-plane magnetic field. We also estimate the critical Zeeman energy where transition occurs from a fully spin polarized composite fermion Fermi sea to a partially spin polarized one, carefully incorporating corrections due to finite width and Landau level mixing, and find it to be in satisfactory agreement with the Zeeman energy where a qualitative change has been observed for the onset bias voltage [Eisenstein et al., Phys. Rev. B 94, 125409 (2016)]. For fractional quantum Hall states, we predict a substantial discontinuous jump in $V_{\rm max}$ when the system undergoes a transition from a fully spin polarized state to a spin singlet or a partially spin polarized state.

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Quantum Hall Spin Diode

Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or anti-parallel spin magnetizations. In the anti-parallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the $N=1$ Landau level at filling factors $ν= 5/2$ and 7/2 is essentially complete, and, with the aid of an in-plane magnetic field component, that Landau level mixing at these filling factors is weak in the samples studied.

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Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions

Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling conductance dI/dV at low voltages is relatively weak, with a strong enhancement reproducibly observed to occur at around |V| ~ 50 mV. While the weak tunneling at low energies is attributed to the absence of substantial overlap, in momentum space, of the metal and graphene Fermi surfaces, the enhancement at higher energies signals the onset of inelastic processes in which phonons in the heterostructure provide the momentum necessary to link the Fermi surfaces. Pronounced peaks in the second derivative of the tunnel current, are observed at voltages where known phonon modes in the tunnel junction have a high density of states. In addition, features in the tunneling conductance attributed to single electron charging of nanometer-scale defects in the boron nitride are also observed in these devices. The small electronic density of states of graphene allows the charging spectra of these defect states to be electrostatically tuned, leading to Coulomb diamonds in the tunneling conductance.

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Charge metastability and hysteresis in the quantum Hall regime

We report simultaneous quasi-dc magnetotransport and high frequency surface acoustic wave measurements on bilayer two-dimensional electron systems in GaAs. Near strong integer quantized Hall states a strong magnetic field sweep hysteresis in the velocity of the acoustic waves is observed at low temperatures. This hysteresis indicates the presence of a metastable state with anomalously high conductivity in the interior of the sample. This non-equilibrium state is not revealed by conventional low frequency transport measurements which are dominated by dissipationless transport at the edge of the 2D system. We find that a field-cooling technique allows the equilibrium charge configuration within the interior of the sample to be established. A simple model for this behavior is discussed.

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Spin and the Coulomb Gap in the Half-Filled Lowest Landau Level

The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low electron density, the width of the Coulomb gap at first increases sharply with in-plane field, but then abruptly levels off. This behavior appears to coincide with the known transition from partial to complete spin polarization of the half-filled lowest Landau level. The tunneling gap therefore opens a new window onto the spin configuration of two-dimensional electron systems at high magnetic field.

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Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness, subtle features are seen in the current-voltage curves, indicating marked influence of the intrinsic defects present in the hBN insulator on the tunneling transport. In particular, single electron charging events are observed, which are more evident in thicker-barrier devices where direct tunneling is substantially low. Furthermore, we find that annealing the devices modifies the defect states and hence the tunneling signatures.

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Heterostructure Symmetry and the Orientation of the Quantum Hall Nematic Phases

Clean two-dimensional electron systems in GaAs/AlGaAs heterostructures exhibit anisotropic collective phases, the quantum Hall nematics, at high Landau level occupancy and low temperatures. An as yet unknown native symmetry-breaking potential consistently orients these phases relative to the crystalline axes of the host material. Here we report an extensive set of measurements examining the role of the structural symmetries of the heterostructure in determining the orientation of the nematics. In single quantum well samples we find that neither the local symmetry of the confinement potential nor the distance between the electron system and the sample surface dictates the orientation of the nematic. In remarkable contrast, for two-dimensional electrons confined at a single heterointerface between GaAs and AlGaAs, the nematic orientation depends on the depth of the two-dimensional electron system beneath the sample surface.

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Transport in indium-decorated graphene

The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.

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Tunneling at $ν_T=1$ in Quantum Hall Bilayers

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $ν_T=1$ are reported. The maximum, or critical current for tunneling at $ν_T=1$, is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperature. Comparisons between the experimentally observed tunneling characteristics and a recent theory are favorable at high temperatures, but not at low temperatures where the tunneling closely resembles the dc Josephson effect. The zero-bias tunneling resistance becomes extremely small at low temperatures, vastly less than that observed at zero magnetic field, but nonetheless remains finite. The temperature dependence of this tunneling resistance is similar to that of the ordinary in-plane resistivity of the quantum Hall phase.

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Exciton Condensation in Bilayer Quantum Hall Systems

The condensation of excitons, bound electron-hole pairs in a solid, into a coherent collective electronic state was predicted over 50 years ago. Perhaps surprisingly, the phenomenon was first observed in a system consisting of two closely-spaced parallel two-dimensional electron gases in a semiconductor double quantum well. At an appropriate high magnetic field and low temperature, the bilayer electron system condenses into a state resembling a superconductor, only with the Cooper pairs replaced by excitons comprised of electrons in one layer bound to holes in the other. In spite of being charge neutral, the transport of excitons within the condensate gives rise to several spectacular electrical effects. This article describes these phenomena and examines how they inform our understanding of this unique phase of quantum electronic matter.

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Thermoelectric response of fractional quantized Hall and re-entrant insulating states in the N=1 Landau level

Detailed measurements of the longitudinal thermopower of two-dimensional electrons in the first excited Landau level are reported. Clear signatures of numerous fractional quantized Hall states, including those at $ν= 5/2$ and 7/3, are observed in the magnetic field and temperature dependence of the thermopower. An abrupt collapse of the thermopower is observed below about $T= 40$ mK at those filling factors where re-entrant insulating electronic states have been observed in conventional resistive transport studies. The thermopower observed at $ν= 5/2$ is discussed in the context of recent theories which incorporate non-abelian quasiparticle exchange statistics.

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Exciton Transport in a Bilayer Quantum Hall Superfluid

Bilayer quantum Hall systems at ν=1 support an excitonic ground state. In addition to the usual charged quasiparticles, this system possesses a condensate degree of freedom: exciton transport. Detection of this neutral transport mode is facilitated by the use of the Corbino multiply-connected geometry in which charge transport is suppressed. We here summarize our recent experiments on Corbino devices which directly demonstrate exciton transport across the bulk of the incompressible ν=1 quantum Hall state.

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Evidence for a fractional quantum Hall state with anisotropic longitudinal transport

At high magnetic fields, where the Fermi level lies in the N=0 lowest Landau level (LL), a clean two-dimensional electron system (2DES) exhibits numerous incompressible liquid phases which display the fractional quantized Hall effect (FQHE) (Das Sarma and Pinczuk, 1997). These liquid phases do not break rotational symmetry, exhibiting resistivities which are isotropic in the plane. In contrast, at lower fields, when the Fermi level lies in the $N\ge2$ third and several higher LLs, the 2DES displays a distinctly different class of collective states. In particular, near half filling of these high LLs the 2DES exhibits a strongly anisotropic longitudinal resistance at low temperatures (Lilly et al., 1999; Du et al., 1999). These "stripe" phases, which do not exhibit the quantized Hall effect, resemble nematic liquid crystals, possessing broken rotational symmetry and orientational order (Koulakov et al., 1996; Fogler et al., 1996; Moessner and Chalker, 1996; Fradkin and Kivelson, 1999; Fradkin et al, 2010). Here we report a surprising new observation: An electronic configuration in the N=1 second LL whose resistivity tensor simultaneously displays a robust fractionally quantized Hall plateau and a strongly anisotropic longitudinal resistance resembling that of the stripe phases.

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Exciton Condensation and Perfect Coulomb Drag

Coulomb drag is a process whereby the repulsive interactions between electrons in spatially separated conductors enable a current flowing in one of the conductors to induce a voltage drop in the other. If the second conductor is part of a closed circuit, a net current will flow in that circuit. The drag current is typically much smaller than the drive current owing to the heavy screening of the Coulomb interaction. There are, however, rare situations in which strong electronic correlations exist between the two conductors. For example, bilayer two-dimensional electron systems can support an exciton condensate consisting of electrons in one layer tightly bound to holes in the other. One thus expects "perfect" drag; a transport current of electrons driven through one layer is accompanied by an equal one of holes in the other. (The electrical currents are therefore opposite in sign.) Here we demonstrate just this effect, taking care to ensure that the electron-hole pairs dominate the transport and that tunneling of charge between the layers is negligible.

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Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.

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Exciton Transport and Andreev Reflection in a Bilayer Quantum Hall System

We demonstrate that counterflowing electrical currents can move through the bulk of the excitonic quantized Hall phase found in bilayer two-dimensional electron systems (2DES) even as charged excitations cannot. These counterflowing currents are transported by neutral excitons which are emitted and absorbed at the inner and outer boundaries of an annular 2DES sample via an Andreev reflection process.

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