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J. P. Griffiths

Publications and source records attributed to J. P. Griffiths.

49 records · Page 3Linked to original sources

Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions

We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field.

cond-mat.mes-hall↗

Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly

The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.

cond-mat.mes-hall↗

A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices

Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible.

cond-mat.mes-hall↗

Confocal microphotoluminescence mapping of coupled and detuned states in photonic molecules

We study the coupling of cavities defined by the local modulation of the waveguide width using confocal photoluminescence microscopy. We are able to spatially map the profile of the antisymmetric (antibonding) and symmetric (bonding) modes of a pair of strongly coupled cavities(photonic molecule) and follow the coupled cavity system from the strong coupling to the weak coupling regime in the presence of structural disorder. The effect of disorder on this photonic molecule is also investigated numerically with a finite-difference time-domain method and a semi-analytical approach, which enables us to quantify the light localization observed in either cavity as a function of detuning.

physics.optics↗

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

cond-mat.mes-hall↗

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

cond-mat.mes-hall↗

Clock-controlled emission of single-electron wavepackets in a solid-state circuit

We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths.

cond-mat.mes-hall↗

Stabilization of single-electron pumps by high magnetic fields

We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.

cond-mat.mes-hall↗

Gigahertz quantized charge pumping in graphene quantum dots

Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.

cond-mat.mes-hall↗

Towards a quantum representation of the ampere using single electron pumps

Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.

cond-mat.mes-hall↗

Compressibility measurements of quasi-one-dimensional quantum wires

We report measurements of the compressibility of a one-dimensional (1D) quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the upper wire to screen the electric field from a biased surface gate. The technique is sensitive enough to resolve spin-splitting of the subbands in the presence of an in-plane magnetic field. We measure a compressibility signal due to the 0.7 structure and study its evolution with increasing temperature and magnetic field. We see no evidence of the formation of the quasibound state predicted by the Kondo model, instead our data are consistent with theories which predict that the 0.7 structure arises as a result of spontaneous spin polarization.

cond-mat.mes-hall↗

Probing spin-charge separation in a Tomonaga-Luttinger liquid

In a one-dimensional (1D) system of interacting electrons, excitations of spin and charge travel at different speeds, according to the theory of a Tomonaga-Luttinger Liquid (TLL) at low energies. However, the clear observation of this spin-charge separation is an ongoing challenge experimentally. We have fabricated an electrostatically-gated 1D system in which we observe spin-charge separation and also the predicted power-law suppression of tunnelling into the 1D system. The spin-charge separation persists even beyond the low-energy regime where the TLL approximation should hold. TLL effects should therefore also be important in similar, but shorter, electrostatically gated wires, where interaction effects are being studied extensively worldwide.

cond-mat.str-el↗

Ballistic electron spectroscopy

We demonstrate the feasibility of ballistic electron spectroscopy as a new tool for mesoscopic physics. A quantum dot is utilised as an energy-selective detector of non-equilibrium ballistic electrons injected into a two-dimensional electron system. In this paper we use a second quantum dot as the electron injector to evaluate the scheme. We propose an application in the study of interacting 1D and 0D systems.

cond-mat.mes-hall↗