arXiv subjects

J. P. Wang

Publications and source records attributed to J. P. Wang.

11 recordsLinked to original sources

arXiv2026

Integrable Volterra hierarchies over nonabelian algebras

Known integrable systems with noncommutative dependent variables are typically formulated over free associative algebras, quantum algebras, or Grassmann algebras. For differential-difference integrable equations, we identify a new class of noncommutative algebras that is compatible with the dynamics and can be positioned between quantum and free algebras. In this brief communication, we consider reductions of the nonabelian Volterra hierarchy to new algebras. This approach extends to a broad class of integrable systems, including the Toda lattice, the Ablowitz-Ladik system, and many others.

nlin.SI↗

arXiv2024

Deterministic interconversion of GHZ state and KLM state via Lie-transform-based pulse design in Rydberg atoms

Conversion between different types of entangled states is an interesting problem in quantum mechanics. But research on the conversion between Greenberger-Horne-Zeilinger (GHZ) state and Knill-Laflamme-Milburn (KLM) state in atomic system is absent. In this paper, we propose a scheme to realize the interconversion (one-step) between GHZ state and KLM state with Rydberg atoms. By utilizing Rydberg-mediated interactions, we simplify the system. By combining Lie-transform-based pulse design, the evolution path is built up to realize interconversion of GHZ state and KLM state. The numerical simulation result shows that the present scheme is robust against decoherence and operational imperfection, the analysis shows that the scheme is feasible with current experimental technology.

quant-ph↗

arXiv2022

Field-free-switching state diagram of perpendicular magnetization subjected to conventional and unconventional spin-orbit torques

The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and spin directions. The injection of such spin currents into an adjacent ferromagnetic layer can excite magnetization dynamics via unconventional spin-orbit torques, leading to deterministic switching in ferromagnets with perpendicular magnetic anisotropy. We study the interplay between conventional and unconventional spin-orbit torques on the magnetization dynamics of a perpendicular ferromagnet in the small intrinsic damping limit, and identify a rich set of dynamical regimes that includes deterministic and probabilistic switching, precessional and pinning states. Contrary to common belief, we found that there exists a critical conventional spin Hall angle, beyond which deterministic magnetization switching transitions to a precessional or pinned state. Conversely, we showed that larger unconventional spin Hall angle is generally beneficial for deterministic switching. We derive an approximate expression that qualitatively describes the state diagram boundary between the full deterministic switching and precessional states and discuss a criterion for searching symmetry-broken spin Hall materials in order to maximize switching efficiency. Our work offers a roadmap towards energy efficient spintronic devices, which might opens doors for applications in advanced in-memory computing technologies.

cond-mat.mes-hall↗

arXiv2021

Perturbative Symmetry Approach for Differential-Difference Equations

We propose a new method for solution of the integrability problem for evolutionary differential-difference equations of arbitrary order. It enables us to produce necessary integrability conditions, to determine whether a given equation is integrable or not, and to advance in classification of integrable equations. In this paper we define and develop symbolic representation for the difference polynomial ring, difference operators and formal series. In order to formulate necessary integrability conditions, we introduce a novel quasi-local extension of the difference ring. It enables us to progress in classification of integrable differential-difference evolutionary equations of arbitrary order. In particular, we solve the problem of classification of integrable equations of order $(-3,3)$ for the important subclass of quasi-linear equations and produce a list of 17 equations satisfying the necessary integrability conditions. For every equation from the list we present an infinite family of integrable higher order relatives. Some of the equations obtained are new.

nlin.SI↗

arXiv2021

Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions

We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does not rely on spin filtering by the tunnel barrier. Our results indicate that the conductance in the anti-parallel configuration is more sensitive to magnetization fluctuations than in MTJs with normal ferromagnets, and predicts a TMR as large as 10^4 % when realistic magnetization fluctuations are accounted for. In addition, we show that the Fermi arc states give rise to a non-monotonic dependence of conductance on the misalignment angle between the magnetizations of the two contacts.

cond-mat.mes-hall↗

arXiv2021

Current-induced torques in magnetic Weyl semimetal tunnel junctions

We study the current-induced torques in asymmetric magnetic tunnel junctions containing a conventional ferromagnet and a magnetic Weyl semimetal contact. The Weyl semimetal hosts chiral bulk states and topologically protected Fermi arc surface states which were found to govern the voltage behavior and efficiency of current-induced torques. We report how bulk chirality dictates the sign of the non-equilibrium torques acting on the ferromagnet and discuss the existence of large field-like torques acting on the magnetic Weyl semimetal which exceeds the theoretical maximum of conventional magnetic tunnel junctions. The latter are derived from the Fermi arc spin texture and display a counter-intuitive dependence on the Weyl nodes separation. Our results shed light on the new physics of multilayered spintronic devices comprising of magnetic Weyl semimetals, which might open doors for new energy efficient spintronic devices.

cond-mat.mes-hall↗

arXiv2021

Efficient domain wall motion in asymmetric magnetic tunnel junctions with vertical current flow

In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We show that as we increase the MTJ asymmetry, by considering dissimilar ferromagnetic contacts, a linear-in-voltage field-like torque behavior is accompanied by an enhancement in the domain wall displacement efficiency and a higher degree of bidirectional propagation. Our analysis is based on a combination of a quantum transport model and magnetization dynamics as described by the Landau-Lifshitz-Gilbert equation, along with comparison to the intrinsic characteristics of a benchmark in-plane current injection domain wall device.

cond-mat.mes-hall↗

arXiv2020

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

cond-mat.mtrl-sci↗

arXiv2003

In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films

We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N) films showed a basic bcc a-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the a-Fe grains and inducing uniaxial anisotropy.

cond-mat.mtrl-sci↗

arXiv2003

Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers

We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, with increasing t(TaN), the values of coercivity, grain size, and amplitude of maximum magnetoresistance (MR) of the samples all decrease first and then increase after reaching a minimum when t(TaN) is around 2.0-4.0 nm. This trend is also associated with an evolution of in-plane magnetic anisotropy, where the multilayers change from uniaxial anisotropy to biaxial at t(TaN) around 4.0 nm and above. We attribute the phenomena to the interlayer coupling effect of FeTaN films as a function of the coupling layer (TaN) thickness, rather than to the thickness dependence observed in single-layered FeTaN films, where the direction of easy axis switches 90degrees when the film is thicker than 300 nm. The in-plane anisotropy of the [(FeTaN)/(TaN)](n) multilayers also shows signs of oscillation when the number of coupling layers varies. The MR effects observed are mainly due to anisotropy MR (AMR), while the grain size and exchange coupling may also contribute to the change of maximum MR ratios in the multilayers with changing t(TaN).

cond-mat.mtrl-sci↗

arXiv2003

Evolution of In-Plane Magnetic Anisotropy In Sputtered FeTaN/TaN/FeTaN Sandwich Films

FeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were characterized using angle-resolved M-H loop tracer, VSM, XRD, TEM, AES and AFM. An evolution of the in-plane anisotropy was observed with the changing thickness of the nonmagnetic TaN interlayer in the FeTaN/TaN/FeTaN sandwiches, such as the easy-hard axis switching and the appearing of biaxial anisotropy. It is ascribed to three possible mechanisms, which are interlayer magnetic coupling, stress, and interface roughness, respectively. Interlayer coupling and stress anisotropies may be the major reasons to cause the easy-hard axis switching in the sandwiches. Whereas, magnetostatic and interface anisotropies may be the major reasons to cause biaxial anisotropy in the sandwiches, in which magnetostatic anisotropy is the dominant one.

cond-mat.mtrl-sci↗