arXiv subjects

J. R. Leonard

Publications and source records attributed to J. R. Leonard.

17 recordsLinked to original sources

arXiv2025

Interference dislocations adjacent to emission spot

We studied interference dislocations (forks) adjacent to an emission spot in an interference pattern. The adjacent interference dislocations are observed in emission of excitons in a monolayer transition metal dichalcogenide and in emission of spatially indirect excitons, also known as interlayer excitons, in a van der Waals heterostructure. The simulations show that the adjacent interference dislocations appear due to the moiré effect in combined interference patterns produced by constituting parts of the emission spot. The adjacent interference dislocations can appear in interference images for various spatially modulated emission patterns.

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arXiv2019

Interference dislocations in condensate of indirect excitons

Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference patterns produced by the quantum system. We present dislocation-like phase singularities in interference patterns in a condensate of indirect excitons measured by shift-interferometry. We show that the observed dislocations in interference patterns are not associated with conventional phase defects: neither with vortices, nor with polarization vortices, nor with half-vortices, nor with skyrmions, nor with half-skyrmions. We present the origin of these new phase singularities in condensate interference patterns: the observed interference dislocations originate from converging of the condensate matter waves propagating from different sources.

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arXiv2019

Exciton gas transport through nano-constrictions

An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. We study theoretically transmission of such bosonic quasiparticles through nano-constrictions. We show that quantum transport phenomena, e.g., conductance quantization, single-slit diffraction, two-slit interference, and the Talbot effect, are experimentally realizable in systems of indirect excitons. We discuss similarities and differences between these phenomena and their counterparts in electronic devices.

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arXiv2018

High-mobility indirect excitons in wide single quantum well

Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying basic properties of IXs in low-disorder environments and for the development of high mobility excitonic devices.

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arXiv2018

Split-gate device for indirect excitons

We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated.

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arXiv2017

Pancharatnam-Berry phase in condensate of indirect excitons

We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry phase is acquired due to coherent spin precession in IX condensate. The effect of the Pancharatnam-Berry phase on the IX phase pattern is described in terms of an associated momentum.

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arXiv2016

Measurement of exciton correlations using electrostatic lattices

We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved.

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arXiv2016

Indirect excitons in a potential energy landscape created by a perforated electrode

We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp increases with increasing exciton density. This effect is explained in terms of disorder screening by repulsive exciton-exciton interactions.

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arXiv2014

Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells

Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude.

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arXiv2014

Stirring Potential for Indirect Excitons

We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency.

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arXiv2013

Ballistic spin transport in exciton gases

Traditional spintronics relies on spin transport by charge carriers, such as electrons in semiconductor crystals. This brings several complications: the Pauli principle prevents the carriers from moving with the same speed; Coulomb repulsion leads to rapid dephasing of electron flows. Spin-optronics is a valuable alternative to traditional spintronics. In spin-optronic devices the spin currents are carried by electrically neutral bosonic quasi-particles: excitons or exciton-polaritons. They can form highly coherent quantum liquids and carry spins over macroscopic distances. The price to pay is a finite life-time of the bosonic spin carriers. We present the theory of exciton ballistic spin transport which may be applied to a range of systems where bosonic spin transport has been reported, in particular, to indirect excitons in coupled GaAs/AlGaAs quantum wells. We describe the effect of spin-orbit interaction of electrons and holes on the exciton spin, account for the Zeeman effect induced by external magnetic fields, long range and short range exchange splittings of the exciton resonances. We also consider exciton transport in the non-linear regime and discuss the definitions of exciton spin current, polarization current and spin conductivity.

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arXiv2013

Optically Controlled Excitonic Transistor

Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.

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arXiv2012

Transport of Indirect Excitons in a Potential Energy Gradient

We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with increasing density and temperature.

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arXiv2012

Spin Texture in a Cold Exciton Gas

We report on the observation of a spin texture in a cold exciton gas in a GaAs/AlGaAs coupled quantum well structure. The spin texture is observed around the exciton rings. The observed phenomena include: a ring of linear polarization, a vortex of linear polarization with polarization perpendicular to the radial direction, an anisotropy in the exciton flux, a skew of the exciton fluxes in orthogonal circular polarizations and a corresponding four-leaf pattern of circular polarization, a periodic spin texture, and extended exciton coherence in the region of the polarization vortex. The data indicate a transport regime where the spin polarization is locked to the direction of particle propagation and scattering is suppressed.

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arXiv2012

Excitation Energy Dependence of the Exciton Inner Ring

We report on the excitation energy dependence of the inner ring in the exciton emission pattern. The contrast of the inner ring is found to decrease with lowering excitation energy. Excitation by light tuned to the direct exciton resonance is found to effectively suppress excitation-induced heating of indirect excitons and facilitate the realization of a cold and dense exciton gas. The excitation energy dependence of the inner ring is explained in terms of exciton transport and cooling.

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arXiv2011

Electrostatic Conveyer for Excitons

We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.

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arXiv2008

Spin transport of indirect excitons in GaAs coupled quantum wells

Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of the exciton emission. The exciton spin transport originates from the long spin relaxation time and long lifetime of the indirect excitons.

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