arXiv subjects

J. R. Petta

Publications and source records attributed to J. R. Petta.

At least 73 records · Page 4Linked to original sources

arXiv2013

Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot

We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low lying excited state. We systematically measure T_1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 microseconds for our device configuration. Measured relaxation times are consistent with a phonon mediated energy relaxation process and indicate that low lying excited states may have important implications in the development of silicon spin qubits.

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arXiv2013

Comment on `Vacuum Rabi Splitting in a Semiconductor Circuit QED System' by Toida et al., Phys. Rev. Lett. 110, 066802 - Published 6 February 2013

Toida et al. claim in their recent article [Phys. Rev. Lett. 110, 066802 (2013)] that they `report a direct observation of vacuum Rabi splitting in a GaAs/AlGaAs double quantum dot (DQD) based charge qubit coupled with a superconducting coplanar waveguide (CPW) resonator'. In this comment, we challenge the main claims made in their paper and show that their results: a) do not provide any evidence of vacuum Rabi oscillations and b) do not provide any direct evidence of vacuum Rabi splitting.

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arXiv2013

Coherent Adiabatic Spin Control in the Presence of Charge Noise Using Tailored Pulses

We study finite-time Landau-Zener transitions at a singlet-triplet level crossing in a GaAs double quantum dot, both experimentally and theoretically. Sweeps across the anticrossing in the high driving speed limit result in oscillations with a small visibility. Here we demonstrate how to increase the oscillation visibility while keeping sweep times shorter than T2* using a tailored pulse with a detuning dependent level velocity. Our results show an improvement of a factor ~2.9 for the oscillation visibility. In particular, we were able to obtain a visibility of ~0.5 for Stückelberg oscillations, which demonstrates the creation of an equally weighted superposition of the qubit states.

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arXiv2012

Cavity-Mediated Entanglement Generation Via Landau-Zener Interferometry

We demonstrate quantum control and entanglement generation using a Landau-Zener beam splitter formed by coupling two transmon qubits to a superconducting cavity. Single passage through the cavity-mediated qubit-qubit avoided crossing provides a direct test of the Landau-Zener transition formula. Consecutive sweeps result in Landau-Zener-Stuckelberg interference patterns, with a visibility that can be sensitively tuned by adjusting the level velocity through both the non-adiabatic and adiabatic regimes. Two-qubit state tomography indicates that a Bell state can be generated via a single passage, with a fidelity of 78% limited by qubit relaxation.

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arXiv2012

A Radio Frequency Charge Parity Meter

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g_c/2pi ~ 17 MHz.

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arXiv2012

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

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arXiv2012

Landau-Zener-Stuckelberg Interferometry of a Single Electron Charge Qubit

We perform Landau-Zener-Stuckelberg interferometry on a single electron GaAs charge qubit by repeatedly driving the system through an avoided crossing. We observe coherent destruction of tunneling, where periodic driving with specific amplitudes inhibits current flow. We probe the quantum dot occupation using a charge sensor, observing oscillations in the qubit population resulting from the microwave driving. At a frequency of 9 GHz we observe excitation processes driven by the absorption of up to 17 photons. Simulations of the qubit occupancy are in good agreement with the experimental data.

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arXiv2012

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets.

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arXiv2012

Circuit Quantum Electrodynamics with a Spin Qubit

Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics architecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric dipole spin resonance and demonstrate that photons trapped in the cavity are sensitive to single spin dynamics. The hybrid quantum system allows measurements of the spin lifetime and the observation of coherent spin rotations. Our results demonstrate that a spin-cavity coupling strength of 1 MHz is feasible.

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arXiv2012

Radio frequency charge sensing in InAs nanowire double quantum dots

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 microseconds at interdot charge transitions and 9 microseconds for charge transitions with the leads.

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arXiv2012

Nonadiabatic quantum control of a semiconductor charge qubit

We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point contact charge sensor. We observe Ramsey fringes in the excited state occupation in response to a pi/2 - pi/2 pulse sequence and extract T2* ~ 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge-echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.

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arXiv2012

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

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arXiv2012

Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots

We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.

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arXiv2011

Harnessing the GaAs quantum dot nuclear spin bath for quantum control

We theoretically demonstrate that nuclear spins can be harnessed to coherently control two-electron spin states in a double quantum dot. Hyperfine interactions lead to an avoided crossing between the spin singlet state and the ms = +1 triplet state, T_+ . We show that a coherent superposition of singlet and triplet states can be achieved using finite-time Landau-Zener-Stückelberg interferometry. In this system the coherent rotation rate is set by the Zeeman energy, resulting in ~1 nanosecond single spin rotations. We analyze the coherence of this spin qubit by considering the coupling to the nuclear spin bath and show that T_2^* ~ 16 ns, in good agreement with experimental data. Our analysis further demonstrates that efficient single qubit and two qubit control can be achieved using Landau-Zener-Stückelberg interferometry.

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arXiv2011

Quantum Coherence in a One-Electron Semiconductor Charge Qubit

We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and non-invasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ~7 ns at the charge degeneracy point, where the qubit level splitting is first-order-insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with predictions from a 1/f noise model.

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arXiv2010

Correlating the nanostructure and electronic properties of InAs nanowires

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominally defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

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arXiv2010

Development and operation of research-scale III-V nanowire growth reactors

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).

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arXiv2010

A coherent beam splitter for electronic spin states

Rapid coherent control of electron spin states is required for implementation of a spin-based quantum processor. We demonstrate coherent control of electronic spin states in a double quantum dot by sweeping an initially prepared spin singlet state through a singlet-triplet anti-crossing in the energy level spectrum. The anti-crossing serves as a beam splitter for the incoming spin singlet state. Consecutive crossings through the beam splitter, when performed within the spin dephasing time, result in coherent quantum oscillations between the singlet state and a triplet state. The all-electrical method for quantum control relies on electron-nuclear spin coupling and drives single electron spin rotations on nanosecond timescales.

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