arXiv subjects

J. Rehacek

Publications and source records attributed to J. Rehacek.

57 records · Page 4Linked to original sources

arXiv2000

Quantum Zeno effect in a probed downconversion process

The distorsion of a spontaneous downconvertion process caused by an auxiliary mode coupled to the idler wave is analyzed. In general, a strong coupling with the auxiliary mode tends to hinder the downconversion in the nonlinear medium. On the other hand, provided that the evolution is disturbed by the presence of a phase mismatch, the coupling may increase the speed of downconversion. These effects are interpreted as being manifestations of quantum Zeno or anti-Zeno effects, respectively, and they are understood by using the dressed modes picture of the device. The possibility of using the coupling as a nontrivial phase--matching technique is pointed out.

quant-ph↗

arXiv1999

Testing operational phase concepts in quantum optics

An experimental comparison of several operational phase concepts is presented. In particular, it is shown that statistically motivated evaluation of experimental data may lead to a significant improvement in phase fitting upon the conventional Noh, Fouge'res and Mandel procedure. The analysis is extended to the asymptotic limit of large intensities, where a strong evidence in favor of multi--dimensional estimation procedures has been found.

quant-ph↗

arXiv1998

On Properties of Boundaries and Electron Conductivity in Mesoscopic Polycrystalline Silicon Films for Memory Devices

We present the results of molecular dynamics modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed. To analyze the crossover of the length of localization of the single-electron states and properties of conductance of the thin polycrystalline film at low temperature, we use a two-dimensional Anderson localization model, with the random one-site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single-electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

cond-mat.dis-nn↗