arXiv subjects

J. Renard

Publications and source records attributed to J. Renard.

8 recordsLinked to original sources

arXiv2026

Coherence Limits in Interference-Based cos(2$\varphi$) Qubits

We investigate the coherence properties of parity-protected $\cos(2\varphi)$ qubits based on interferences between two Josephson elements in a superconducting loop. We show that qubit implementations of a $\cos(2\varphi)$ potential using a single loop, such as those employing semiconducting junctions, rhombus circuits, flowermon and KITE structures, can be described by the same Hamiltonian as two multi-harmonic Josephson junctions in a SQUID geometry. We find that, despite the parity protection arising from the suppression of single Cooper pair tunneling, there exists a fundamental trade-off between charge and flux noise dephasing channels. Using numerical simulations, we examine how relaxation and dephasing rates depend on external flux and circuit parameters, and we identify the best compromise for maximum coherence. With currently existing circuit parameters, the qubit lifetime $T_1$ can exceed milliseconds while the dephasing time $T_\varphi$ remains limited to only a few microseconds due to either flux or charge noise. Our findings establish practical limits on the coherence of this class of qubits and raise questions about the long-term potential of this approach.

quant-ph↗

arXiv2019

Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe2 monolayer

The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest emissions observed in monolayers exfoliated from bulk material. The 2s excitonic state is also observed at higher energies in the photoluminescence spectrum. Magneto-optical spectroscopy allows for the determination of the g-factors and of the spatial extent of the excitonic wave functions associated with these emissions. Our work establishes CVD grown monolayers of transition metal dichalcogenides as a mature technology for optoelectronic applications.

cond-mat.mes-hall↗

arXiv2019

Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures

Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross section with electrons in a type I van der Waals heterostructure, made of single layer molybdenum disulphide and thin boron nitride films, electrons and holes created in boron nitride can be transferred to the dichalcogenide where they form electron-hole pairs yielding luminescence. This cathodoluminescence can be mapped with a spatial resolution far exceeding what can be achieved in a typical photoluminescence experiment, and is highly valuable to understand the optoelectronic properties at the nanometer scale. We find that in heterostructures prepared following the mainstream dry transfer technique, cathodoluminescence is locally extinguished, and we show that this extinction is associated with the formation of defects, that are detected in Raman spectroscopy and photoluminescence. We establish that to avoid defect formation induced by low-energy electron beams and to ensure efficient transfer of electrons and holes at the interface between the layers, flat and uniform interlayer interfaces are needed, that are free of trapped species, airborne ones or contaminants associated with sample preparation. We show that heterostructure fabrication using a pick-up technique leads to superior, intimate interlayer contacts associated with significantly more homogeneous cathodoluminescence.

cond-mat.mes-hall↗

arXiv2015

Electrical control of g-factors in a few-hole silicon nanowire MOSFET

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz.

cond-mat.mes-hall↗

arXiv2013

Non-galvanic primary thermometry of a two-dimensional electron gas

We report the experimental realization of a non-galvanic, primary thermometer capable of measuring the electron temperature of a two-dimensional electron gas with negligible thermal load. Such a thermometer consists of a quantum dot whose temperature-dependent, single-electron transitions are detected by means of a quantum-point-contact electrometer. Its operating principle is demonstrated for a wide range of electron temperatures from 40 to 800 mK. This noninvasive thermometry can find application in experiments addressing the thermal properties of micrometer-scale mesoscopic electron systems, where heating or cooling electrons requires relatively low thermal budgets.

cond-mat.mes-hall↗

arXiv2012

Conductance fluctuations in quasi-two-dimensional systems: a practical view

The universal conductance fluctuations of quasi-two-dimensional systems are analyzed with experimental considerations in mind. The traditional statistical metrics of these fluctuations (such as variance) are shown to have large statistical errors in such systems. An alternative characteristic is identified, the inflection point of the correlation function in magnetic field, which is shown to be significantly more useful as an experimental metric and to give a more robust measure of phase coherence.

cond-mat.mes-hall↗

arXiv2011

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton spin in these nanowire embedded QDs. A detailed examination of the luminescence polarization angular dependence shows orthogonal linear exciton eigenstates with no preferential crystallographic orientation.

cond-mat.mtrl-sci↗

arXiv2010

Real-Time Imaging of K atoms on Graphite: Interactions and Diffusion

Scanning tunneling microscopy (STM) at liquid helium temperature is used to image potassium adsorbed on graphite at low coverage (~0.02 monolayer). Single atoms appear as protrusions on STM topographs. A statistical analysis of the position of the atoms demonstrates repulsion between adsorbates, which is quantified by comparison with molecular dynamics simulations. This gives access to the dipole moment of a single adsorbate, found to be 10.5 Debye. Time lapse imaging shows that long range order is broken by thermally activated diffusion, with a 32 meV barrier to hopping between graphite lattice sites.

cond-mat.mes-hall↗