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J. S. Moodera

Publications and source records attributed to J. S. Moodera.

At least 19 recordsLinked to original sources

Interface-Induced Stability of Nontrivial Topological Spin Textures: Unveiling Room-Temperature Hopfions and Skyrmions

Topological spin configurations, such as soliton-like spin texture and Dirac electron assemblies, have emerged in recent years in both fundamental science and technological applications. Achieving stable topological spin textures at room-temperature is crucial for enabling these structures as long-range information carriers. However, their creation and manipulation processes have encountered difficulties due to multi-step field training techniques and competitive interactions. Thus, a spontaneous ground state for multi-dimensional topological spin textures is desirable, as skyrmions form swirling, hedgehog-like spin structures in two dimensions, while hopfions emerge as their twisted three-dimensional counterparts. Here, we report the first observation of robust and reproducible topological spin textures of hopfions and skyrmions observed at room temperature and in zero magnetic field, which are stabilized by geometric confinement and protected by interfacial magnetism in a ferromagnet/topological insulator/ferromagnet trilayer heterostructure. These skyrmion-hopfion configurations are directly observed at room temperature with Lorenz transmission electron microscopy. Using micromagnetic modelling, the experimental observations of hopfion-skyrmion assemblies are reproduced. Our model reveals a complete picture of how spontaneously organized skyrmion lattices encircled by hopfion rings are controlled by surface electrons, uniaxial anisotropy and Dzyaloshinskii-Moriya interaction, all at ambient temperature. Our study provides evidence that topological chiral spin textures can facilitate the development of magnetically defined information carriers. These stable structures hold promise for ultralow-power and high-density information processing, paving the way for the next generation of topologically defined devices.

cond-mat.mes-hall↗

Superconducting spintronic tunnel diode

Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tunnel junction achieves a large rectification (up to $\sim40$\%) already for a small voltage bias ($\sim 200$ $μ$V) thanks to the small energy scale of the system: the Al superconducting gap. With the help of an analytical theoretical model we can link the maximum rectification to the spin polarization of the barrier and describe the quasi-ideal Schottky-diode behavior of the junction. This cryogenic spintronic rectifier is promising for the application in highly-sensitive radiation detection for which two different configurations are evaluated. In addition, the superconducting diode may pave the way for future low-dissipation and fast superconducting electronics.

cond-mat.supr-con↗

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering

Rare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity and strong spin polarization suitable for spin transistors, magnetic memories and spin-based quantum computing devices. Its large spin splitting of the optical bandgap functions as a spin-filter that offers the means for spin-polarized current injection into metals, superconductors, topological insulators, 2D layers and other novel materials. As spintronics devices require thin films, a successful implementation of GdN demands a detailed investigation of the optical and magnetic properties in very thin films. With this objective, we investigate the dependence of the direct and indirect optical bandgaps (Eg) of half-metallic GdN, using the trilayer structure AlN(10 nm)/GdN(t)/AlN(10 nm) for GdN film thickness t in the ranging from 6 nm to 350 nm, in both paramagnetic (PM) and ferromagnetic (FM) phases. Our results show a bandgap of 1.6 eV in the PM state, while in the FM state the bandgap splits for the majority (0.8 eV) and minority (1.2 eV) spin states. As the GdN film becomes thinner the spin split magnitude increases by 60%, going from 0.290 eV to 0.460 eV. Our results point to methods for engineering GdN films for spintronic devices.

cond-mat.mtrl-sci↗

Magnon-mediated spin currents in Tm3Fe5O12/Pt with perpendicular magnetic anisotropy

The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more efficient wave-based logic and memory computing devices. In MI/NM bilayers, where NM being a normal metal providing a strong spin-orbit coupling, the PMA benefits the spin-orbit torque (SOT) driven magnetization's switching by lowering the needed current and rendering the process faster, crucial for developing magnetic random-access memories (SOT-MRAM). In this work, we investigated the magnetic anisotropies in thulium iron garnet (TIG) films with PMA via ferromagnetic resonance measurements, followed by the excitation and detection of magnon-mediated pure spin currents in TIG/Pt driven by microwaves and heat currents. TIG films presented a Gilbert damping constant α~0.01, with resonance fields above 3.5 kOe and half linewidths broader than 60 Oe, at 300 K and 9.5 GHz. The spin-to-charge current conversion through TIG/Pt was observed as a micro-voltage generated at the edges of the Pt film. The obtained spin Seebeck coefficient was 0.54 μV/K, confirming also the high interfacial spin transparency.

physics.app-ph↗

Do topology and ferromagnetism cooperate at the EuS/Bi$_2$Se$_3$ interface?

We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer and cause a complete depolarization of the muons. However, in both Bi$_2$Se$_3$ and titanium we measure similar local magnetic fields, implying that their origin is mostly independent of the topological properties of the interface electronic states. In addition, we use resonant soft X-ray angle resolved photoemission spectroscopy (SX-ARPES) to probe the electronic band structure at the interface between EuS and Bi$_2$Se$_3$. By tuning the photon energy to the Eu anti-resonance at the Eu $M_5$ pre-edge we are able to detect the Bi$_2$Se$_3$ conduction band, through a protective Al$_2$O$_3$ capping layer and the EuS layer. Moreover, we observe a signature of an interface-induced modification of the buried Bi$_2$Se$_3$ wave functions and/or the presence of interface states.

cond-mat.mtrl-sci↗

Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators

In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the hybridization gap. Here we show, however, that these insulating states are destroyed by the presence of a large and long-range-correlated disorder potential, which converts the expected insulator into a metal. We perform transport measurements in ultrathin, dual-gated topological insulator films as a function of temperature, gate voltage, and magnetic field, and we observe a metallic-like, non-quantized conductivity, which exhibits a weak antilocalization-like cusp at the low magnetic field and gives way to a nonsaturating linear magnetoresistance at large field. We explain these results by considering the disordered network of electron- and hole-type puddles induced by charged impurities. We argue theoretically that such disorder can produce an insulator-to-metal transition as a function of increasing disorder strength, and we derive a condition on the band gap and the impurity concentration necessary to observe the insulating state. We also explain the linear magnetoresistance in terms of strong spatial fluctuations of the local conductivity, using both numerical simulations and a theoretical scaling argument.

cond-mat.mes-hall↗

A superconducting absolute spin valve

A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently tunable magnetizations, may be used as an ideal $absolute$ spin-valve. Here we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized currents through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, logical element for a memory cell in cryogenics superconductor-based computers and superconducting spintronics in general.

cond-mat.supr-con↗

Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator $(Bi_{0.22}Sb_{0.78})_2Te_3$ Films at Room Temperature

We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, spin pumping (SPE) and spin Seebeck effects (SSE). In the first we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI $(Bi_{0.22}Sb_{0.78})_2Te_3$ layer in direct contact with Py. In the second we use the SSE in the longitudinal configuration in Py without contamination by the Nernst effect made possible with a thin NiO layer between the Py and $(Bi_{0.22}Sb_{0.78})_2Te_3$ layers. The spin-to-charge current conversion is attributed to the inverse Edelstein effect (IEE) made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.

cond-mat.mes-hall↗

Structural properties of thin-film ferromagnetic topological insulators

We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investigate the effect of doping, substrate choice and film thickness on the (Bi, Sb)$_2$Te$_3$ unit cell using high-resolution X-ray diffractometry. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements provide local structural and interfacial information. We find that the unit cell is unaffected in-plane by vanadium doping changes, and remains unchanged over a thickness range of 4--10 quintuple layers (1 QL $\approx$ 1 nm). The in-plane lattice parameter ($a$) also remains the same in films grown on different substrate materials. However, out-of-plane the $c$-axis is reduced in films grown on less closely lattice-matched substrates, and increases with the doping level.

cond-mat.mtrl-sci↗

Revealing the magnetic proximity effect in EuS/Al bilayers through superconducting tunneling spectroscopy

A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange splitting of the BCS peaks is present already in the unpolarized state of the ferromagnetic insulator (EuS), and is being further enhanced when magnetizing the sample by a magnetic field. The measurement data taken at the lowest temperatures feature a high contrast which has allowed us to relate the line shape of the split BCS conductance peaks to the characteristic magnetic domain structure of the EuS layer in the unpolarized state. These results pave the way to engineering triplet superconducting correlations at domain walls in EuS/Al bilayers. Furthermore, the hard gap and clear splitting observed in our tunneling spectroscopy measurements indicate that EuS/Al bilayers are excellent candidates for substituting strong magnetic fields in experiments studying Majorana bound states.

cond-mat.supr-con↗

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

cond-mat.mes-hall↗

Observation of chiral currents at the magnetic domain boundary of a topological insulator

A magnetic domain boundary on the surface of a three-dimensional topological insulator is predicted to host a chiral edge state, but direct demonstration is challenging. Here, we used a scanning superconducting quantum interference device to show that current in a magnetized EuS/Bi2Se3 heterostructure flows at the edge when the Fermi level is gate-tuned to the surface band gap. We further induced micron-scale magnetic structures on the heterostructure, and detected a chiral edge current at the magnetic domain boundary. The chirality of the current was determined by magnetization of the surrounding domain and its magnitude by the local chemical potential rather than the applied current. Such magnetic structures, provide a platform for detecting topological magnetoelectric effects and may enable progress in quantum information processing and spintronics.

cond-mat.mes-hall↗

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. The directionality of spin and momentum, as well as control with light has been demonstrated. Here we demonstrate a coherent femtosecond control of spin-polarization for states in the valence band at around the Dirac cone.

cond-mat.mes-hall↗

Proposal for a phase-coherent thermoelectric transistor

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to $\sim 45$ and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit.

cond-mat.mes-hall↗

All Magnesium diboride Josephson Junctions with MgO and native oxide barriers

We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction characteristic with critical current-resistance product nearly independent of the junction area. The dependence of the critical current with temperature up to 20 K agrees with the [Ambegaokar and Baratoff, Phys. Rev. Lett. 10, 486 (1963)] expression. For the junctions with native-oxide, conductance at low bias exhibits subgap features while at high bias reveals thick barriers. As a result no supercurrent was observed in the latter, despite the presence of superconducting-gaps to over 30 K.

cond-mat.supr-con↗

Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions

In double spin filter (SF) tunnel junctions, the spin information is generated and analyzed purely from the SF effect with nonmagnetic electrodes. In this article we numerically evaluate the bias dependence of magnetoresistance in such tunnel junctions (nonmagnetic metal / SF / nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases when different SF materials are utilized. A large magnetoresistance with nonmonotonic and asymmetric bias dependence is expected within the frame of WKB approximation. We illustrate the systematic influence of tunnel barrier height, tunnel barrier thickness, and exchange energy splitting on magnetoresistance, particularly focusing on the asymmetric behavior of the magnetoresistance bias dependence.

cond-mat.mtrl-sci↗

Origin of intrinsic Gilbert damping

The damping of magnetization, represented by the rate at which it relaxes to equilibrium, is successfully modeled as a phenomenological extension in the Landau-Lifschitz-Gilbert equation. This is the damping torque term known as Gilbert damping and its direction is given by the vector product of the magnetization and its time derivative. Here we derive the Gilbert term from first principles by a non-relativistic expansion of the Dirac equation. We find that the Gilbert term arises when one calculates the time evolution of the spin observable in the presence of the full spin-orbital coupling terms, while recognizing the relationship between the curl of the electric field and the time varying magnetic induction.

cond-mat.other↗

Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers

In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory shows excellent agreement with experiment.

cond-mat.mtrl-sci↗