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J. S. T. Wickramasinghe

Publications and source records attributed to J. S. T. Wickramasinghe.

2 recordsLinked to original sources

An Instrument for Precision Controlled Radiation Exposures, Charged Beam Profile Measurement, and Real-time Fluence Monitoring Beyond $10^{16}$ n$_{\textrm{eq}}$/cm$^{2}$

An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The system is capable of treating devices with dimensional scales ranging from millimeters to extended objects of cross sections measured in tens of square centimeters. The instrument has been demonstrated to operate effectively in integrated fluences ranging up to a few times $10^{16}$ 1-MeV-neutron-equivalent/cm$^{2}$ (n$_{\textrm{eq}}$). The positioner portion of the system comprises a set of remotely controllable sample holders incorporating cooling and interfaces for sample power and readout, all constructed from low activation technologies. The monitoring component of the system samples the current or voltage of radiation tolerant silicon diodes placed directly in the path of the beam.

physics.ins-det↗

Effect of annealing temperature on photovoltaic properties of spin coated CdS films

CdS thin film samples were fabricated using spin coating technique on normal glass and conductive glass substrates and annealed at different temperatures. According to the XRD patterns of films prepared on normal glass substrates, polycrystalline films are consist of single phase of CdS. Films synthesized on conductive glass substrates were employed for photovoltaic measurements. Variation of photovoltaic properties with annealing temperature was investigated. The liquid junction photocell was measured in the electrolyte of Na2S2O3/I2. Then, the short circuit photo current and open circuit photo voltage were measured at room temperature under illumination and under dark using a solar cell simulation system. Optical band gap of CdS film samples was determined by measuring UV-visible spectroscopy.

cond-mat.mtrl-sci↗