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J. Sonntag

Publications and source records attributed to J. Sonntag.

8 recordsLinked to original sources

Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5° and 8° when using a green excitation laser. The twist angles can directly be extracted from the moiré superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm.

cond-mat.mes-hall

Tunable coupling of two mechanical resonators by a graphene membrane

Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consisting of two physically separated mechanical resonators -- a comb-drive actuator and a suspended silicon beam -- that are tunably coupled by a graphene membrane. The graphene membrane, moreover, provides a sensitive electrical read-out for the two resonating systems silicon structures showing 16 different modes in the frequency range from 0.4~to 24~MHz. In addition, by pulling on the graphene membrane with an electrostatic potential applied to one of the silicon resonators, we control the mechanical coupling, quantified by the $g$-factor, from 20 kHz to 100 kHz. Our results pave the way for coupled nanoelectromechanical systems requiring controllable mechanically coupled resonators.

cond-mat.mes-hall

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around $10\,\mathrm{μm}$ at low temperatures and electron-phonon scattering limited transport at room temperature.

cond-mat.mes-hall

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4~aF$/\sqrt{\textrm{Hz}}$ at 77 K on a comb-drive actuator, while maintaining a small excitation amplitude of 15~$k_\text{B} T/e$. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60~mK with a probe signal of 12.8~$k_\text{B} T/e$.

physics.ins-det

Detecting Ultrasound Vibrations by Graphene Resonators

Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated. We achieve ultimately a resolution of $\approx7$~pm/$\mathrm{\sqrt Hz}$ in ultrasound amplitude at frequencies up to 100~MHz. Thanks to an extremely high nonlinearity in the mechanical restoring force, the resonance frequency itself can also be used for ultrasound detection. We observe a shift of 120~kHz at a resonance frequency of 65~MHz for an induced vibration amplitude of 100~pm with a resolution of 25~pm. Remarkably, the nonlinearity also explains the generally observed asymmetry in the resonance frequency tuning of the resonator when pulled upon with an electrostatic gate. This work puts forward a sensor design that fits onto an atomic force microscope cantilever and therefore promises direct ultrasound detection at the nanoscale for nondestructive subsurface characterization.

physics.app-ph

Fabrication of comb-drive actuators for straining nanostructured suspended graphene

We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room temperature in order to allow for strain-dependent transport measurements. The graphene is integrated by mechanically transferring it directly onto the actuator using a polymethylmethacrylate membrane. Importantly, the integrated graphene can be nanostructured afterwards to optimize device functionality. The minimum feature size of the structured suspended graphene is 30 nm, which allows for interesting device concepts such as mechanically-tunable nanoconstrictions. Finally, we characterize the fabricated devices by measuring the Raman spectrum as well as the a mechanical resonance frequency of an integrated graphene sheet for different strain values.

physics.app-ph

Impact of Many-Body Effects on Landau Levels in Graphene

We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity $v_\mathrm{F}$. In contrast to the logarithmic divergence of $v_\mathrm{F}$ at zero magnetic field, we find a piecewise linear scaling of $v_\mathrm{F}$ as a function of charge carrier density, due to a magnetic field-induced suppression of the long-range Coulomb interaction. We quantitatively confirm our experimental findings by performing tight-binding calculations on the level of the Hartree-Fock approximation, which also allow us to estimate an excitonic binding energy of $\approx$ 6 meV contained in the experimentally extracted Landau level transitions energies.

cond-mat.mes-hall

Tailoring mechanically-tunable strain fields in graphene

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$μ$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.

cond-mat.mtrl-sci