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J. Tranchant

Publications and source records attributed to J. Tranchant.

3 recordsLinked to original sources

Anisotropy of Ultrafast Strain in $V_2O_3$ Thin Films: Out-of-Equilibrium Phase Transitions under Interfacial Clamping

Ultrafast photoinduced insulator-to-metal transitions in correlated materials are often mediated by lattice distortions, yet the role of interfacial lattice constraints in shaping nonequilibrium pathways remains largely unexplored. We use azimuth-resolved time-resolved X-ray diffraction to track orientation-dependent strain dynamics in granular V$_2$O$_3$ thin films on c-cut sapphire, where thermal-expansion mismatch imposes anisotropic interfacial strain. Across the thermal transition, the azimuthal profile of the (110)$_H$ strain inverts curvature, providing direct evidence of partial clamping of the hexagonal basal-plane lattice (a$_H$,b$_H$). After photoexcitation of the antiferromagnetic insulating phase, the structural response remains clamp-limited: weakly constrained grain families reach the full basal-plane contraction characteristic of the metallic-like state, whereas strongly constrained families exhibit a strongly reduced distortion. Fluence-dependent measurements further disentangle transformed fraction from clamping-limited lattice distortion. Our results show that interfacial clamping acts as a static selector for ultrafast phase switching and provide a general route to quantify anisotropic strain dynamics in heterostructures.

cond-mat.mtrl-sci

Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved {\mu}-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.

cond-mat.str-el

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.

cond-mat.str-el