arXiv subjects

J. Trey Diulus

Publications and source records attributed to J. Trey Diulus.

3 recordsLinked to original sources

arXiv2025

Toward the Origins of Binding Energy Shifts and Satellites Formation During Plasma-XPS Measurements

In plasma X ray photoelectron spectroscopy emerges as a powerful platform for real time, in situ chemical analysis under conditions relevant to semiconductor processing and other plasma enabled technologies. This study investigates the origins of binding energy shifts and satellite peaks formation observed during plasma XPS measurements across conductive, dielectric, and gas phase systems. Using a standard laboratory based ambient pressure XPS apparatus coupled with an alternating current driven capacitively coupled plasma source, we show that metastable surface species, such as transient Au oxides, can be detected during plasma exposure, revealing chemical states hardly accessible using conventional ultrahigh vacuum XPS. In dielectric samples, we observe pressure- and plasma type dependent BE shifts up to 50 eV, attributed to X ray induced and plasma mediated surface charging. These shifts are mitigated at higher pressures plasmas or in electronegative plasmas, the latter due to enhanced charge compensation mechanisms involving slow negative ions. For gas phase species, AC plasma excitation leads to spectral broadening and the emergence of satellite peaks with a few eV energy separations, linked to oscillating local plasma potentials in the probing volume. These findings highlight the important and complex interplay of plasma parameters, surface charging, and local electric fields in shaping XPS spectra. Overall, plasma XPS emerges as a critical metrological tool for probing transient surface chemistry, with implications for semiconductor processing, material synthesis, and plasma diagnostics.

physics.plasm-ph↗

arXiv2025

Operando XPS in Reactive Plasmas: The Importance of The Wall Reactions

Advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at (near-)ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we demonstrated the capabilities of an ambient pressure XPS (APXPS) setup for in-situ plasma environment measurements, allowing plasma-surface interactions to be studied in operando rather than using the traditional before-and-after analysis approach. This new plasma-XPS technique facilitates the identification of reaction intermediates critical for understanding plasma-assisted surface processes relevant to semiconductor nanomanufacturing, such as physical vapor deposition, etching, atomic layer deposition, etc. In this report, we apply the plasma-XPS approach to monitor real-time surface chemical changes on a model Ag(111) single crystal exposed to oxidizing and reducing plasmas. We correlate surface-sensitive data with concurrent gas-phase XPS measurements and residual gas mass-spectra analysis of species generated during plasma exposure, highlighting the significant role of plasma-induced chamber wall reactions. Ultimately, we demonstrate that plasma-XPS provides comprehensive insights into both surface and gas-phase chemistry, establishing it as a versatile and dynamic characterization tool with broad applications in microelectronics research.

physics.plasm-ph↗

arXiv2024

Operando Plasma-XPS for Process Monitoring: Hydrogenation of Copper Oxide Confined Under h-BN Case Study

We demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. Hexagonal boron nitride (h-BN) was used in this study as a model system since it exhibits a wide array of unique chemical, optical, and electrical properties that make it a prospective material for advanced electronics. To better understand the stability and surface chemistry of h-BN during plasma-assisted processing, we used polycrystalline Cu foils with single-layer h-BN, grown via chemical vapor deposition (CVD), and tracked in real-time the plasma-induced reduction of the underlying Cu oxide using APXPS equipped with 22 kHz 75 W discharge plasma source operating at 13 Pa. Residual gas analysis (RGA) mass-spectra were concurrently collected during plasma-XPS to track reaction products formed during plasma exposure. A clear reduction of CuxO is seen, while an h-BN layer remains intact, suggesting H radical species can attack the exposed and h-BN-covered Cu oxide patches and partially reduce the underlying substrate. In addition to the demonstration and discussion of plasma-XPS capabilities, our results indicate the h-BN encapsulated metallic Cu interface might be repaired without significantly damaging the overlaying h-BN, which is of practical importance for the development of h-BN encapsulated devices and interfaces

cond-mat.mtrl-sci↗