arXiv subjects

J. Vogt

Publications and source records attributed to J. Vogt.

2 recordsLinked to original sources

arXiv2015

Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.

cond-mat.mtrl-sci↗

arXiv2007

MBE growth of cubic AlxIn1-xN and AlxGayIn1-x-yN lattice matched to GaN

Ternary and quaternary cubic c-AlxIn1-xN/GaN and c-AlxGayIn1-x-y/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-AlxGayIn1-x-y alloy permits the independent control of band gap and lattice parameter. The ternary and quaternary films were grown at 620 C. Different alloy compositions were obtained by varying the Al and Ga fluxes. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDX) and Rutherford Backscattering Spectrometry (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer.

cond-mat.mtrl-sci↗