arXiv subjects

J. Zhu

Publications and source records attributed to J. Zhu.

At least 55 records · Page 3Linked to original sources

arXiv2016

Gate-controlled topological conducting channels in bilayer graphene

The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $Ω$ carries opposite sign in the K and K' valleys. A sign reversal of $Ω$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with opposite valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In bilayer graphene, the reversal of $Ω$ can occur at the domain wall of AB and BA stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations such as valves and waveguides, but is technically challenging to realize. Here we fabricate a dual-split-gate structure in bilayer graphene and demonstrate transport evidence of the predicted metallic states. They possess a mean free path of up to a few hundred nanometers in the absence of a magnet field. The application of perpendicular magnetic field suppresses backscattering significantly and enables a 400-nanometer-long junction to exhibit conductance close to the ballistic limit of 4 $e^2/h$ at 8 Tesla. Our experiment paves the path to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

cond-mat.mes-hall↗

arXiv2016

Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes $m^*_e$ and $m^*_h$ in bilayer graphene in the low carrier density regime of order 1 * 10^11 cm^-2. Measurements use temperature-dependent low-field Shubnikov-de Haas (SdH) oscillations are observed in high-mobility hexagonal boron nitride (h-BN) supported samples. We find that while $m^*_e$ follows a tight-binding description in the whole density range, $m^*_h$ starts to drop rapidly below the tight-binding description at carrier density n = 6 * 10^11 cm^-2 and exhibits a strong suppression of 30% when n reaches 2 * 10^11 cm^-2. Contributions from electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This study reveals an unusual disorder effect unique to two-dimensional semi-metallic systems.

cond-mat.mes-hall↗

arXiv2016

Model-independent determination of the strong-phase difference between D^0 and D^0-bar-> K^0_S,L h^+ h^- (h=pi,K) and its impact on the measurement of the CKM angle gamma/phi_3

We report the first determination of the relative strong-phase difference between D^0 -> K^0_S,L K^+ K^- and D^0-bar -> K^0_S,L K^+ K^-. In addition, we present updated measurements of the relative strong-phase difference between D^0 -> K^0_S,L pi^+ pi^- and D^0-bar -> K^0_S,L pi^+ pi^-. Both measurements exploit the quantum coherence between a pair of D^0 and D^0-bar mesons produced from psi(3770) decays. The strong-phase differences measured are important for determining the Cabibbo-Kobayashi-Maskawa angle gamma/phi_3 in B^- -> K^- D^0-tilde decays, where D^0-tilde is a D^0 or D^0-bar meson decaying to K^0_S h^+ h^- (h=pi,K), in a manner independent of the model assumed to describe the D^0 -> K^0_S h^+ h^- decay. Using our results, the uncertainty in gamma/phi_3 due to the error on the strong-phase difference is expected to be between 1.7 and 3.9 degrees for an analysis using B^- K^- D^0-tilde D^0-tilde -> K^0_S pi^+ pi^- decays, and between 3.2 and 3.9 degrees for an analysis based on B^- -> K^- D^0-tilde, D^0-tilde -> K^0_S K^+ K^- decays. A measurement is also presented of the CP-odd fraction, F_-, of the decay D^0 -> K^0_S K^+ K^- in the region of the phi -> K^+ K^- resonance. We find that in a region within 0.01 GeV^2/c^4 of the nominal phi mass squared F_- > 0.91 at the 90% confidence level.

hep-ex↗

arXiv2015

Electrically tunable resonant scattering in fluorinated bilayer graphene

Adatom-decorated graphene offers a promising new path towards spintronics in the ultrathin limit. We combine experiment and theory to investigate the electronic properties of dilutely fluorinated bilayer graphene, where the fluorine adatoms covalently bond to the top graphene layer. We show that fluorine adatoms give rise to resonant impurity states near the charge neutrality point of the bilayer, leading to strong scattering of charge carriers and hopping conduction inside a field-induced band gap. Remarkably, the application of an electric field across the layers is shown to tune the resonant scattering amplitude from fluorine adatoms by nearly twofold. The experimental observations are well explained by a theoretical analysis combining Boltzmann transport equations and fully quantum-mechanical methods. This paradigm can be generalized to many bilayer graphene-adatom materials, and we envision that the realization of electrically tunable resonance may be a key advantage in graphene-based spintronic devices.

cond-mat.mes-hall↗

arXiv2015

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1-2x10^13 /cm^2/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

cond-mat.mes-hall↗

arXiv2014

Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3

Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but further theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. High pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

cond-mat.supr-con↗

arXiv2014

Synthetic magnetoelectric coupling in a nanocomposite multiferroic

Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution in the quest to realize magnetoelectric cou-pling between ferromagnetic and ferroelectric order parameters. Despite having antiferro-magnetic order, BiFeO3 (BFO) has nevertheless been a key material in this quest due to excel-lent ferroelectric properties at room temperature. We studied a superlattice composed of 8 repetitions of 6 unit cells of La0.7Sr0.3MnO3 (LSMO) grown on 5 unit cells of BFO. Significant net uncompensated magnetization in BFO is demonstrated using polarized neutron reflectometry in an insulating superlattice. Remarkably, the magnetization enables magnetic field to change the dielectric properties of the superlattice, which we cite as an example of synthetic magnetoelectric coupling. Importantly, this controlled creation of magnetic moment in BFO suggests a much needed path forward for the design and implementation of integrated oxide devices for next generation magnetoelectric data storage platforms.

cond-mat.mes-hall↗

arXiv2014

Formation of Compressed Flat Electron Beams with High Transverse-Emittance Ratios

Flat beams -- beams with asymmetric transverse emittances -- have important applications in novel light-source concepts, advanced-acceleration schemes and could possibly alleviate the need for damping rings in lepton colliders. Over the last decade, a flat-beam-generation technique based on the conversion of an angular-momentum-dominated beam was proposed and experimentally tested. In this paper we explore the production of compressed flat beams. We especially investigate and optimize the flat-beam transformation for beams with substantial fractional energy spread. We use as a simulation example the photoinjector of the Fermilab's Advanced Superconducting Test Accelerator (ASTA). The optimizations of the flat beam generation and compression at ASTA were done via start-to-end numerical simulations for bunch charges of 3.2 nC, 1.0 nC and 20 pC at ~37 MeV. The optimized emittances of flat beams with different bunch charges were found to be 0.25 μm (emittance ratio is ~400), 0.13 μm, 15 nm before compression, and 0.41 μm, 0.20 μm, 16 nm after full compression, respectively with peak currents as high as 5.5 kA for a 3.2-nC flat beam. These parameters are consistent with requirements needed to excite wakefields in asymmetric dielectric-lined waveguides or produce significant photon flux using small-gap micro-undulators.

physics.acc-ph↗

arXiv2013

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure

Topological superconductivity is one of most fascinating properties of topological quantum matters that was theoretically proposed and can support Majorana Fermions at the edge state. Superconductivity was previously realized in a Cu-intercalated Bi2Se3 topological compound or a Bi2Te3 topological compound at high pressure. Here we report the discovery of superconductivity in the topological compound Sb2Te3 when pressure was applied. The crystal structure analysis results reveal that superconductivity at a low-pressure range occurs at the ambient phase. The Hall coefficient measurements indicate the change of p-type carriers at a low-pressure range within the ambient phase, into n-type at higher pressures, showing intimate relation to superconducting transition temperature. The first principle calculations based on experimental measurements of the crystal lattice show that Sb2Te3 retains its Dirac surface states within the low-pressure ambient phase where superconductivity was observed, which indicates a strong relationship between superconductivity and topology nature.

cond-mat.mtrl-sci↗

arXiv2013

Superconductivity of topological insulator Bi2Se3 at high pressures

The pressure induced superconductivity and structural evolution for Bi2Se3 single crystal have been studied. The emergence of superconductivity with onset transition temperature (Tc) about 4.4K is observed around 12GPa. Tc increases rapidly to the highest 8.5K at 16GPa, decreases to 6.5K at 21GPa, then keep almost constant. It is found that Tc versus pressure is closely related to the carrier density which increases by more than two orders of magnitude from 2GPa to 23GPa. High pressure synchrotron radiation measurements reveal structure transitions occur around 12GPa, 20GPa, and above 29GPa, respectively. A phase diagram of superconductivity versus pressure is obtained.

cond-mat.supr-con↗

arXiv2013

Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field

We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO2 top and bottom gates enables independent tuning of the perpendicular electric field and the Fermi level over an unprecedentedly large range. We observe a resistance change of six orders of magnitude in the ABC trilayer, which demonstrates the opening of a band gap. Our data suggest that the gap saturates at a large displacement field of D ~ 3 V/nm, in agreement with self-consistent Hartree calculations. In contrast, the ABA trilayer remains metallic even under a large perpendicular electric field. Despite the absence of a band gap, the band structure of the ABA trilayer continues to evolve with increasing D. We observe signatures of two-band conduction at large D fields. Our self-consistent Hartree calculation reproduces many aspects of the experimental data, but also points to the need for more sophisticated theory.

cond-mat.mes-hall↗

arXiv2013

Surfactant mediated growth of ferromagnetic Mn δ-doped Si

We present an investigation of Mn δ-doped layers in Si(001) grown by molecular beam epitaxy. We discovered that a Pb surfactant has significant effect on the structural and magnetic properties of the submonolayer of Mn, which depends on the Si capping layer growth temperature, T_Si, and the Mn coverage, θ_Mn. The results presented in this paper identify three regions in the growth-phase-diagram characterized by distinct magnetic behaviors and crystal structures. In one region, X-ray absorption fine structure (XAFS) and transmission electron microscopy (TEM) experiments indicate that MnSi nanocrystallites form with B2-like crystal type structures. At the optimal growth conditions, T_Si = 200 C and θ_Mn = 0.26 monolayer, a ferromagnetic phase develops with a Curie temperature T_C > 400 K and a saturation moment m_sat = 1.56 μ_B/Mn, whereas T_C drops to zero for a control sample prepared without Pb. For T_Si > 200 C, MnSi-B20 type precipitates form with a T_C ~ 170 K. Rutherford backscattering spectroscopy shows that the increase in the remanent magnetization in these two phases is possibly correlated with an increase in the Mn substitutional fraction, which suggests that a Si_{1-x}Mn_x dilute magnetic semiconductor may be forming in the matrix between the precipitates. Density functional calculations show that Pb changes the pathway by which the Mn atoms access the Si substitutional sites, Mn_Si. While the Pb increases the formation energy of Mn_Si at the Si surface, it enables substitutional incorporation by lowering the formation energy of Si vacancies by 0.92 eV.

cond-mat.mtrl-sci↗

arXiv2012

Optical toroidal dipolar response by an asymmetric double-bar metamaterial

We demonstrate that the toroidal dipolar response can be realized in the optical regime by designing a feasible nanostructured metamaterial, comprising asymmetric double-bar magnetic resonators assembled into a toroid-like configuration. It is confirmed numerically that an optical toroidal dipolar moment dominates over other moments. This response is characterized by a strong confinement of an E-field component at the toroid center, oriented perpendicular to the H-vortex plane. The resonance-enhanced optical toroidal response can provide an experimental avenue for various interesting optical phenomena associated with the elusive toroidal moment.

physics.optics↗

arXiv2012

Electron-phonon bound states in graphene in a perpendicular magnetic field

The spectrum of electron-phonon complexes in a monolayer graphene is investigated in the presence of a perpendicular quantizing magnetic field. Despite the small electron-phonon coupling, usual perturbation theory is inapplicable for calculation of the scattering amplitude near the threshold of the optical phonon emission. Our findings beyond perturbation theory show that the true spectrum near the phonon emission threshold is completely governed by new branches, corresponding to bound states of an electron and an optical phonon with a binding energy of the order of $αω_{0}$ where $α$ is the electron-phonon coupling and $ω_{0}$ the phonon energy.

cond-mat.mes-hall↗

arXiv2012

Studies on fast triggering and high precision tracking with Resistive Plate Chambers

We report on studies of fast triggering and high-precision tracking using Resistive Plate Chambers (RPCs). Two beam tests were carried out with the 180 GeV muon beam at CERN using RPCs with gas gaps of 1.00 or 1.15 mm and equipped with readout strips with 1.27 mm pitch. This is the first beam test of RPCs with fine-pitch readout strips that explores simultaneously precision tracking and triggering capabilities. RPC signals were acquired with precision timing and charge integrating readout electronics at both ends of the strips. The time resolution was measured to be better than 600 ps and the average spatial resolution was found to be 220 um using charge information and 287 um using timing information. The dual-ended readout allows the determination of the average and the difference of the signal arrival times. The average time was found to be independent of the incident particle position along the strip and is useful for triggering purposes. The time difference yielded a determination of the hit position with a precision of 7.5 mm along the strip. These results demonstrate the feasibility using RPCs for fast and high-resolution triggering and tracking.

physics.ins-det↗

arXiv2012

Amplitude analysis of D0->K+K-pi+pi-

The first flavor-tagged amplitude analysis of the decay D0 to the self-conjugate final state K+K-pi+pi- is presented. Data from the CLEO II.V, CLEO III, and CLEO-c detectors are used, from which around 3000 signal decays are selected. The three most significant amplitudes, which contribute to the model that best fits the data, are phirho0, K1(1270)+-K-+, and non-resonant K+K-pi+pi-. Separate amplitude analyses of D0 and D0-bar candidates indicate no CP violation among the amplitudes at the level of 5% to 30% depending on the mode. In addition, the sensitivity to the CP-violating parameter gamma/phi3 of a sample of 2000 B+ -> D0-tilde(K+K-pi+pi-)K+ decays, where D0-tilde is a D0 or D0-bar, collected at LHCb or a future flavor facility, is estimated to be (11.3 +/- 0.3) degrees using the favored model.

hep-ex↗

arXiv2012

Integrating Functional Oxides with Graphene

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO_2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene-oxide hybrid structures.

cond-mat.mes-hall↗

arXiv2012

Evidence for spin-flip scattering and local moments in dilute fluorinated graphene

The issue of whether local magnetic moments can be formed by introducing adatoms into graphene is of intense research interest because it opens the window to fundamental studies of magnetism in graphene, as well as of its potential spintronics applications. To investigate this question we measure, by exploiting the well-established weak localization physics, the phase coherence length L_phi in dilute fluorinated graphene. L_phi reveals an unusual saturation below ~ 10 K, which cannot be explained by non-magnetic origins. The corresponding phase breaking rate increases with decreasing carrier density and increases with increasing fluorine density. These results provide strong evidence for spin-flip scattering and points to the existence of adatom-induced local magnetic moment in fluorinated graphene. Our results will stimulate further investigations of magnetism and spintronics applications in adatom-engineered graphene.

cond-mat.mes-hall↗