arXiv subjects

Jack Hellerstedt

Publications and source records attributed to Jack Hellerstedt.

18 recordsLinked to original sources

arXiv2025

Atomic-scale control of substrate-spin coupling via vertical manipulation of a 2D metal-organic framework

Two-dimensional (2D) materials with frustrated crystal geometries can host strongly correlated electrons, potentially leading to a range of exotic many-body quantum phases such as Mott insulators, quantum spin-liquids, and Kondo lattices. The ability to control exchange-coupling within these systems is therefore highly desirable. Here, we use an atomically sharp scanning tunneling microscope probe to vertically manipulate a 2D Mott insulating kagome metal-organic framework (MOF) featuring Kondo-screened local magnetic moments on Ag(111). We show that by controlling the adsorption height of the MOF, we can also controllably and reversibly change the strength of Kondo coupling between the MOF's local spins and the substrate's conduction electrons. This mechanical control of Kondo coupling could be extended to other forms of interlayer exchange coupling, potentially allowing for atomic-scale design or control of spintronics technologies.

cond-mat.str-el↗

arXiv2024

Upper Bound Estimate of the Electronic Scattering Potential of a Weakly Interacting Molecular Film on a Metal

Thin organic films and two-dimensional (2D) molecular assemblies on solid surfaces yield the potential for applications in molecular electronics, optoelectronics, catalysis, and sensing. These applications rely on the intrinsic electronic properties of the hybrid organic/inorganic interface. Here, we investigate the energy dispersion of 2D electronic states at the interface between an atomically thin self-assembled molecular film, comprised of flat, noncovalently bonded 9,10-dicyanoanthracene (DCA) molecules, and a Ag(111) surface. Using Fourier-transformed scanning tunnelling spectroscopy (FT-STS), we determined that the 2D electronic wave functions with wavevectors within ~80% of the first Brillouin zone (BZ) area close to the Gamma-point are free-electron-like, suggesting a weak electronic interaction between the 2D molecular film and the metal surface. Via a perturbative second-order correction to the free electron energy dispersion, we further established an upper bound for the amplitude of the scattering potential resulting from the self-assembled molecular film that the interface electrons are subject to, on the order of 1.5 eV. Our approach allows for quantifying electronic interactions at hybrid 2D interfaces and heterostructures.

cond-mat.mtrl-sci↗

arXiv2024

Local gate control of Mott metal-insulator transition in a 2D metal-organic framework

Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ~200 meV, consistent with dynamical mean field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs.

cond-mat.str-el↗

arXiv2023

Selective Activation of Aromatic C-H Bonds Catalyzed by Single Gold Atoms at Room Temperature

Selective activation and controlled functionalization of C-H bonds in organic molecules is one of the most desirable processes in synthetic chemistry. Despite progress in heterogeneous catalysis using metal surfaces, this goal remains challenging due to the stability of C-H bonds and their ubiquity in precursor molecules, hampering regioselectivity. Here, we examine the interaction between 9,10-dicyanoanthracene (DCA) molecules and Au adatoms on a Ag(111) surface at room temperature (RT). Characterization via low-temperature scanning tunneling microscopy, spectroscopy, and noncontact atomic force microscopy, supported by theoretical calculations, revealed the formation of organometallic DCA-Au-DCA dimers, where C atoms at the ends of the anthracene moieties are bonded covalently to single Au atoms. The formation of this organometallic compound is initiated by a regioselective cleaving of C-H bonds at RT. Hybrid quantum mechanics/molecular mechanics calculations show that this regioselective C-H bond cleaving is enabled by an intermediate metal-organic complex which significantly reduces the dissociation barrier of a specific C-H bond. Harnessing the catalytic activity of single metal atoms, this regioselective on-surface C-H activation reaction at RT offers promising routes for future synthesis of functional organic and organometallic materials.

physics.chem-ph↗

arXiv2022

Counting Molecules: Python based scheme for automated enumeration and categorization of molecules in scanning tunneling microscopy images

Scanning tunneling and atomic force microscopies (STM/nc-AFM) are rapidly progressing to offer unprecedented spatial resolution of a diverse array of chemical species. In particular, they are employed to characterize on-surface chemical reactions by directly examining precursors and products. Chiral effects and self-assembled structures can also be investigated. This open source, modular, python based scheme automates the categorization of a variety of molecules present in medium sized (10$\times$10 to 100$\times$100 nm) scanned probe images.

cond-mat.mes-hall↗

arXiv2021

Manifestation of strongly correlated electrons in a 2D kagome metal-organic framework

The kagome lattice, whose electronic valence band (VB) structure includes two Dirac bands and one flat band, offers a rich space to realise tuneable topological and strongly correlated electronic phases in two-dimensional (2D) and layered materials. While strong electron correlations have been observed in inorganic kagome crystals, they remain elusive in organic systems. The latter offer versatile synthesis protocols via molecular self-assembly and metal-ligand coordination. Here, we report the synthesis of a 2D metal-organic framework (MOF) where di-cyano-anthracene (DCA) molecules form a kagome arrangement via coordination with copper (Cu) atoms on a silver surface [Ag(111)]. Low-temperature scanning tunnelling spectroscopy revealed Kondo screening--by the Ag(111) conduction electrons--of magnetic moments localised at Cu and DCA sites of the MOF. Density functional theory and mean-field Hubbard modelling show that these local moments emerge from strong interactions between kagome MOF electrons, enabling organic 2D materials as viable platforms for strongly correlated nanoelectronics and spintronics.

cond-mat.str-el↗

arXiv2020

Significance of nuclear quantum effects in hydrogen bonded molecular chains

In hydrogen bonded systems, nuclear quantum effects such as zero-point motion and tunneling can significantly affect their material properties through underlying physical and chemical processes. Presently, direct observation of the influence of nuclear quantum effects on the strength of hydrogen bonds with resulting structural and electronic implications remains elusive, leaving opportunities for deeper understanding to harness their fascinating properties. We studied hydrogen-bonded one-dimensional quinonediimine molecular networks which may adopt two isomeric electronic configurations via proton transfer. Herein, we demonstrate that concerted proton transfer promotes a delocalization of π-electrons along the molecular chain, which enhances the cohesive energy between molecular units, increasing the mechanical stability of the chain and giving rise to new electronic in-gap states localized at the ends. These findings demonstrate the identification of a new class of isomeric hydrogen bonded molecular systems where nuclear quantum effects play a dominant role in establishing their chemical and physical properties. We anticipate that this work will open new research directions towards the control of mechanical and electronic properties of low-dimensional molecular materials via concerted proton tunneling.

cond-mat.mes-hall↗

arXiv2020

Long-Range Surface-Assisted Molecule-Molecule Hybridization

Metalated phthalocyanines (Pc's) are robust and versatile molecular complexes, whose properties can be tuned by changing their functional groups and central metal atom. The electronic structure of magnesium Pc (MgPc) - structurally and electronically similar to chlorophyll - adsorbed on the Ag(100) surface is investigated by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS), non-contact atomic force microscopy (ncAFM) and density functional theory (DFT). Single, isolated MgPc's exhibit a flat, four-fold rotationally symmetric morphology, with doubly degenerate, partially populated (due to surface-to-molecule electron transfer) lowest unoccupied molecular orbitals (LUMOs). In contrast, MgPc's with neighbouring molecules in proximity undergo a lift of LUMOs degeneracy, with a near-Fermi local density of states with reduced two-fold rotational symmetry, indicative of a long-range attractive intermolecular interaction. The latter is assigned to a surface-mediated two-step electronic hybridization process. First, LUMOs interact with Ag(100) conduction electrons, forming hybrid molecule-surface orbitals with enhanced spatial extension. Then, these delocalized molecule-surface states further hybridize with those of neighbouring molecules. This work highlights how the electronic structure of molecular adsorbates - including orbital degeneracies and symmetries - can be significantly altered via surface-mediated intermolecular hybridization, over extended distances (beyond 3 nm), having important implications for prospects of molecule-based solid-state technologies.

cond-mat.mtrl-sci↗

arXiv2020

Quantum Transport in Air-stable Na3Bi Thin Films

Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure.

cond-mat.mtrl-sci↗

arXiv2020

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT, we find the band structure is highly two-dimensional, with negligible dispersion along the c-axis. Due to n-type doping we are able to observe the conduction band minima, and directly measure the minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermi surface in the conduction band is characterized by anisotropic electron pockets with sharp in-plane dispersion about the $\overline{M}$ points, yielding effective masses of 0.21 $m_{0}$ along $\overline{KM}$ and 0.33 $m_{0}$ along $\overline{ΓM}$. The measured band structure is well supported by hybrid density functional theory calculations. The highly two-dimensional (2D) bandstructure with moderate bandgap and small effective mass suggest that $β'-In_{2}Se_{3}$ is a potentially useful new van der Waals semiconductor. This together with its ferroelectricity makes it a viable material for high-mobility ferroelectric-photovoltaic devices, with applications in non-volatile memory switching and renewable energy technologies.

cond-mat.mtrl-sci↗

arXiv2019

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with no conductive channels. Such as topological transistor is promising for low-energy logic circuits [4], which would necessitate electric field-switched materials with conventional and topological bandgaps much greater than room temperature, significantly greater than proposed to date [6-8]. Topological Dirac semimetals(TDS) are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases [3,10-16]. Here we use scanning probe microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES) to show that mono- and bilayer films of TDS Na3Bi [3,17] are 2D topological insulators with bulk bandgaps >400 meV in the absence of electric field. Upon application of electric field by doping with potassium or by close approach of the STM tip, the bandgap can be completely closed then re-opened with conventional gap greater than 100 meV. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy kT = 25 meV at room temperature, suggest that ultrathin Na3Bi is suitable for room temperature topological transistor operation.

cond-mat.mtrl-sci↗

arXiv2018

On-Surface Structural and Electronic Properties of Spontaneously Formed Tb$_2$Pc$_3$ Single Molecule Magnets

The single molecule magnet (SMM) bis(phthalocyaninato)terbium (III) (TbPc$_2$) has attracted steady research attention as an exemplar system for realizing molecule-based spin electronics. In this paper, we report on the spontaneous formation of Tb$_2$Pc$_3$ species from TbPc$_2$ precursors via sublimation in ultrahigh vacuum (UHV) onto an Ag(111) surface. The molecules on the surface are inspected using combined scanning tunneling (STM) and non-contact atomic force microscopies (nc-AFM) at 5 Kelvin. Submolecular resolution and height dependent measurements supported by density functional theory (DFT) calculations unambiguously show the presence of both TbPc$_2$ and Tb$_2$Pc$_3$ species. The synthesis of Tb$_2$Pc$_3$ species under UHV conditions is independently confirmed by chemical analysis. The high-resolution AFM imaging allows us to register the orientation of the topmost Pc ligand in both Tb$_2$Pc$_3$ and TbPc$_2$ relative to the underlying Ag(111) surface. Measurements of the electronic structure reveal the selective appearance of a Kondo signature with temperature $\sim$ 30K in the Tb$_2$Pc$_3$ species, localized to the Pc ligand lobes. We attribute the presence of the Kondo resonance on select Tb$_2$Pc$_3$ molecules to the orientation of internal molecular ligands. High-resolution AFM imaging identifies geometric distortions between Tb$_2$Pc$_3$ molecules with and without the Kondo effect, the result of the complex interplay between structural and electronic differences.

cond-mat.mes-hall↗

arXiv2017

Observation of Effective Pseudospin Scattering in ZrSiS

3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in momentum space, leading to the prediction of pseudospin vortex rings and pseudospin skyrmions. Here, we use Fourier transform scanning tunneling spectroscopy (FT-STS) at 4.5 K to resolve quasiparticle interference (QPI) patterns at single defect centers on the surface of the line nodal semimetal zirconium silicon sulfide (ZrSiS). Our QPI measurements show pseudospin conservation at energies close to the line node. In addition, we determine the Fermi velocity to be $\hbar v_F = 2.65 \pm 0.10$ eV Å in the Γ-M direction ~300 meV above the Fermi energy $E_F$, and the line node to be ~140 meV above $E_F$. More importantly, we find that certain scatterers can introduce energy-dependent non-preservation of pseudospins, giving rise to effective scattering between states with opposite valley pseudospin deep inside valence and conduction bands. Further investigations of quasiparticle interference at the atomic level will aid defect engineering at the synthesis level, needed for the development of lower-power electronics via dissipationless electronic transport in the future.

cond-mat.mtrl-sci↗

arXiv2017

Temperature Dependent n-p Transition of 3 Dimensional Dirac Semimetal Na$_3$Bi Thin Film

We study the temperature dependence ($77$ K - $475$ K) of the longitudinal resistivity and Hall coefficient of thin films (thickness $20$ nm) of three dimensional topological Dirac semimetal Na$_3$Bi grown via molecular beam epitaxy (MBE). The temperature-dependent Hall coefficient is electron-like at low temperature, but transitions to hole-like transport around $200$ K. We develop a model of a Dirac band with electron-hole asymmetry in Fermi velocity and mobility (assumed proportional to the square of Fermi velocity) which explains well the magnitude and temperature dependence of the Hall resistivity. We find that the hole mobility is about $7$ times larger than the electron mobility. In addition, we find that the electron mobility decreases significantly with increasing temperature, suggesting electron-phonon scattering strongly limits the room temperature mobility.

cond-mat.mtrl-sci↗

arXiv2017

Electrostatic Modulation of the Electronic Properties of Dirac Semimetal Na3Bi

Large-area thin films of topological Dirac semimetal Na$_3$Bi are grown on amorphous SiO$_2$:Si substrates to realise a field-effect transistor with the doped Si acting as back gate. As-grown films show charge carrier mobilities exceeding 7,000 cm$^2$/Vs and carrier densities below 3 $\times $10$^{18}$ cm$^{-3}$, comparable to the best thin-film Na$_3$Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. Due to the inverted band structure, the hole mobility is significantly larger than the electron mobility in Na$_3$Bi, and when present, these holes dominate the transport properties.

cond-mat.mtrl-sci↗

arXiv2016

Spatial Charge Inhomogeneity and Defect States in Topological Dirac Semimetal Thin Films

The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene, substrate disorder drives fluctuations in EF. Three-dimensional topological Dirac semimetals (TDS)6,7 obviate the substrate, and should show reduced EF fluctuations due to better metallic screening and higher dielectric constants. Here we map the potential fluctuations in TDS Na3Bi using a scanning tunneling microscope. The rms potential fluctuations are significantly smaller than room temperature (ΔEF,rms = 4-6 meV = 40-70 K) and comparable to the highest quality graphene on h-BN;8 far smaller than graphene on SiO2,9,10 or the Dirac surface state of a topological insulator.11 Surface Na vacancies produce a novel resonance close to the Dirac point with surprisingly large spatial extent and provides a unique way to tune the surface density of states in a TDS thin-film material.

cond-mat.mtrl-sci↗

arXiv2014

Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi$_2$Se$_3$

Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier density shows high interface n-doping (1.5 x 10$^{13}$ cm$^{-2}$) at the onset of film conduction, and bulk dopant density of $\sim$5 x 10$^{18}$ cm$^{-3}$, roughly independent of growth temperature profile. Mobility depends more strongly on the growth temperature and is related to the crystalline quality of the samples quantified by \emph{ex-situ} AFM measurements. These results indicate that Bi$_2$Se$_3$ as prepared by widely employed parameters is \emph{n}-doped before exposure to atmosphere, the doping is largely interfacial in origin, and dopants are not the limiting disorder in present Bi$_2$Se$_3$ films.

cond-mat.mtrl-sci↗

arXiv2011

Phase diagram of electrostatically doped Strontium Titanate (SrTiO3)

Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such doping over broad ranges of temperature and carrier concentration employing an ionic liquid as the gate dielectric. The surprising results are, with increasing carrier concentration, an apparent carrier-density dependent conductor-insulator transition, a regime of anomalous Hall effect, suggesting magnetic ordering, and finally the appearance of superconductivity. The possible appearance of magnetic order near the boundary between the insulating and superconducting regimes is reminiscent of effects associated with quantum critical behavior in some complex compounds.

cond-mat.supr-con↗