arXiv subjects

Jack Tavakley

Publications and source records attributed to Jack Tavakley.

3 recordsLinked to original sources

arXiv2026

Layer-polarized Transport via Gate-defined 1D and 0D PN Junctions in Double Bilayer Graphene

We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to the top gates are the same but different on the bottom gates. Resistance peaks are observed at finite doping instead of at the charge neutrality points, exhibiting an unconventional broken-cross shape that arises from layer polarization of the P and N region, which can be further enhanced with finite magnetic fields. A 0D point junction (PJ) can be electrostatically defined by applying different gate voltages to the top and bottom gates, such that the P and N sides of the device are connected at a single point in the center of the device. As finite magnetic field B increases, the quantum Hall (QH) states are selectively brought into contact or away from each other depending on their layer polarization, leading to unconventional quantum oscillations which characterize the layer-polarized band-crossing. Our work provides new insights into understanding band-structure evolution and layer polarization in twisted bilayers and paves the way for new device functionality based on manipulating layer-polarized electronic states.

cond-mat.mes-hall↗

arXiv2026

Ferroelectric Quantum Point Contact in Twisted Transition Metal Dichalcogenides

In twisted transition metal dichalcogenides (tTMDs), atomic reconstruction gives rise to moir\'e domains with alternating ferroelectric polarization, whose domain size and overall electric dipole moment are tunable by an out-of-plane electric field. Previous transport measurements in Hall bar devices have successfully demonstrated the overall ferroelectric behavior of tTMDs from a collective ensemble of ferroelectric moir\'e domains. To locally probe a single ferroelectric moir\'e domain, we fabricate and study mesoscopic quantum transport via a gate-defined twisted molybdenum disulfide (tMoS2) quantum point contact (QPC). The local property of a single moir\'e domain is invulnerable to long-range disorder and twist-angle inhomogeneity, resulting in an unusually long conductance plateau with large electrical hysteresis. The comparison between local and global measurements confirms that antiferroelectricity can emerge from alternating polarization of individual ferroelectric domains. Using a QPC as a single charge sensor, we characterize the nature and time scale of different domain evolution mechanisms with single atomic dipole resolution. Our findings shed new light on the microscopic ferroelectric behavior and dynamics within a single tTMD moir\'e domain, paving the way toward more advanced ferroelectric quantum devices with tunable local Hamiltonian, such as ferroelectric tTMD quantum dots (QDs).

cond-mat.mes-hall↗

arXiv2024

Tunable atomically enhanced moir\'e Berry curvatures in twisted triple bilayer graphene

We report a twisted triple bilayer graphene platform consisting of three units of Bernal bilayer graphene consecutively twisted at 1.49{\deg} and 1.68{\deg}. We demonstrate the atomic reconstruction between the two competing moir\'e superlattices strongly enhances the Berry curvature of each moir\'e band insulator state, characterized by measured strong nonlocal valley Hall effect that sensitively depends on the inter-moir\'e competition strength, tunable by manipulating the out-of-plane carrier distribution. Our study sheds light on the microscopic mechanism of atomic and electronic reconstruction in twisted multilayer systems, by systematically investigating transport signatures of moir\'e Berry curvature and its enhancement from moir\'e-of-moir\'e lattice reconstruction. We show that the reconstructed electronic band can be versatilely tuned by electrostatics, providing an approach toward engineering the band structure and its topology for a quantum material platform with designer electrical and optical properties.

cond-mat.mes-hall↗