Jacklyn Zhu | Searcharxiv

arXiv2026

High-temperature operation of III-nitride high-electron-mobility transistors

High-electron-mobility transistors (HEMTs) made with III-nitride materials are of potential use in high-temperature electronic applications including power electronics, communications, aerospace and space exploration. However, the demands of such applications make it essential to understand the thermal limits and performance evolution of III-nitride HEMTs. Here, we analyze the high-temperature operation of III-nitride HEMTs, examining the impact on material properties, device structure, and circuit-level behavior. We explore the role of critical device layers - including barrier and channel engineering, substrate selection, and passivation strategies - in mitigating high-temperature-induced effects, and evaluate the thermal stability of III-nitride HEMTs in logic, radiofrequency, and power electronics applications. We also highlight key remaining challenges in the design and optimization of III-nitride devices for high-temperature applications.

cond-mat.mtrl-sci↗

arXiv2026

A self-heating electrochemical cell with nine decades of programmable linear resistance

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution but suffers from limitations due to the programming mechanisms that confine switching to nanoscale constrictions or field-sensitive semiconductor junctions, leading to non-linear current-voltage relationships and errors. Here, we introduce a tunable resistor that is programmed into non-volatile, high-precision resistance states spanning nine orders of magnitude, with linear current-voltage characteristics across the entire range -- significantly improving the performance and widening the application space of resistive memory. A key advance is an electrothermal gate that simultaneously spreads heat and electrochemical reactions during programming to enable large, bulk composition modulation. The volumetric modulation can host thousands of linear resistance states with 100x lower conductance errors than other memory. This enables direct processing of analog signals with high fidelity, and we demonstrate variable-gain amplification, division, and multiplication. Integration with CMOS is used to show resilience to electrical and thermal disturb in arrays and to demonstrate retention of analog levels at <1% average loss for more than 2 months across 100 devices. Simulations indicate matrix multiplication efficiency could approach >1,000 TOPS/W.

cs.ET↗