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Jackson Miller

Publications and source records attributed to Jackson Miller.

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Tuneable magnetic behaviour, electronic structure and nitrogen vacancy formation in Gd$_{x}$Sm$_{1-x}$N

The rare earth nitrides are the only series of intrinsic ferromagnetic semiconductors where the interplay of spin and unquenched orbital angular momentum provides access to a range of magnetic behaviour. Furthermore, the magnetic properties can be finely tuned through the combination of multiple lanthanide ions in the nitride. Here we present a combined computational and experimental study on the electronic and magnetic properties of Gd$_x$Sm$_{1-x}$N and discuss the effect of cation substitution on the internal exchange field and band structure. We find that as the coercive field of Gd$_x$Sm$_{1-x}$N changes over orders of magnitude via cation substitution the internal exchange field changes by $\sim$20%. Control of these material properties is vital in the field of superconducting spintronics. Finally, motivated by an enhanced concentration of nitrogen vacancies in films with higher Sm content, we investigate computationally the formation of nitrogen vacancy defects in Gd$_x$Sm$_{1-x}$N finding that the formation energy is significantly reduced for vacancy sites adjacent to Sm ions rather than Gd ions.

cond-mat.mtrl-sci

Non-volatile superconducting tunnelling magnetoresistance memory enabled by exchange-field gap engineering

Scalable, low-dissipation memory operating below 4 K is a critical requirement for superconducting and quantum computing systems. Existing cryogenic memory technologies rely on CMOS derivatives or hybrid architectures that incur leakage, refresh overhead or limited compatibility with superconducting logic. Here we demonstrate a superconducting tunnelling magnetoresistance device that functions as a non-volatile cryogenic memory element across the full superconducting temperature range. By integrating a de Gennes spin valve with a superconducting tunnel junction in a current perpendicular-to-plane geometry, we realise exchange-field control of the superconducting energy gap. This produces two magnetically switchable gap voltages and robust quasiparticle tunnelling magnetoresistance down to 0.25 K.The device operates at millivolt bias with nanowatt-level read power and zero standby dissipation. Its vertical junction architecture and Nb-based materials platform enable compatibility with superconducting logic and scalable cryogenic memory arrays.

cond-mat.supr-con