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Jacob Gayles

Publications and source records attributed to Jacob Gayles.

28 records · Page 2Linked to original sources

All Electrical Access to Topological Transport Features in Mn$_{1.8}$PtSn Films

The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $ρ_\mathrm{xy}^\mathrm{T} = 8$ n$Ω$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations.

cond-mat.mes-hall↗

Strong anomalous Nernst effect in collinear magnetic Weyl semimetals without net magnetic moments

We predict a large anomalous Nernst effect in the inverse Heusler compensated ferrimagnets Ti$_2$Mn$X$ ($X$=Al,Ga,In) with vanishing net magnetic moments. Though the net magnetic moment is zero, the Weyl points in these systems lead to a large anomalous Nernst conductivity (ANC) due to the lack of a magnetic sublattice that inverses the sign of the Berry curvature. In comparison to the noncollinear antiferromagnets Mn$_3$Sn and Mn$_3$Ge, the high ANC stems almost entirely from the Weyl points in this class of compounds, and thus, it is topologically protected. This work shows for the first time a large ANC with zero net magnetic moments in collinear systems, which is helpful for comprehensive understanding of the thermoelectric effect in zero-moment magnetic materials and its further applications.

cond-mat.mtrl-sci↗

Emerging chiral edge states from the confinement of a magnetic Weyl semimetal in Co$_3$Sn$_2$S$_2$

The quantum anomalous Hall effect (QAHE) and magnetic Weyl semimetals (WSMs) are topological states induced by intrinsic magnetic moments and spin-orbit coupling. Their similarity suggests the possibility of achieving the QAHE by dimensional confinement of a magnetic WSM along one direction. In this study, we investigate the emergence of the QAHE in the two-dimensional (2D) limit of magnetic WSMs due to finite size effects in thin films and step-edges. We demonstrate the feasibility of this approach with effective models and real materials. To this end, we have chosen the layered magnetic WSM Co$_3$Sn$_2$S$_2$, which features a large anomalous Hall conductivity and anomalous Hall angle in its 3D bulk, as our material candidate. In the 2D limit of Co$_3$Sn$_2$S$_2$ two QAHE states exist depending on the stoichiometry of the 2D layer. One is a semimetal with a Chern number of 6, and the other is an insulator with a Chern number of 3. The latter has a band gap of 0.05 eV, which is much larger than that in magnetically doped topological insulators. Our findings naturally explain the existence of chiral states in step edges of bulk Co$_3$Sn$_2$S$_2$ which habe been reported in a recent experiment at $T = 4K$ and present a realistic avenue to realize QAH states in thin films of magnetic WSMs.

cond-mat.str-el↗

Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$

The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $Ω^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($σ_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets.

cond-mat.mtrl-sci↗

Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co$_2$MnGa

Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13 %, which is comparatively larger than topologically trivial metals. There is a good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggest that the effect is intrinsic. Thus, the Co$_2$MnGa compound manifests as a promising material towards topologically-driven spintronic applications.

cond-mat.mtrl-sci↗

Anisotropic Topological Hall Effect with Real and Momentum Space Berry Curvature in the Antiskrymion Hosting Heusler Compound Mn$_{1.4}$PtSn

The topological Hall effect (THE) is one of the key signatures of topologically non-trivial magnetic spin textures, wherein electrons feel an additional transverse voltage to the applied current. The magnitude of THE is often small compared to the anomalous Hall effect. Here, we find a large THE of 0.9 $μΩ$cm that is of the same order of the anomalous Hall effect in the single crystalline antiskyrmion hosting Heusler compound Mn$_{1.4}$PtSn, a non-centrosymmetric tetragonal compound. The THE is highly anisotropic and survives in the whole temperature range where the spin structure is noncoplanar (<170 K). The THE is zero above the spin reorientation transition temperature of 170 K, where the magnetization will have a collinear and ferromagnetic alignment. The large value of the THE entails a significant contribution from the momentum space Berry curvature along with real space Berry curvature, which has never been observed earlier.

cond-mat.mtrl-sci↗

Topological Hall effect in thin films of Mn$_{1.5}$PtSn

Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μ_{0}H \approx 4~$T below the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between $0.76~μΩ$cm and $1.55~μΩ$cm at 150~K.

cond-mat.mtrl-sci↗

Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films

Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content $y$ and diverges at $y \sim 0.45$. This indicates a zero-crossing of the DMI, which we reproduced in calculations using first principle methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content $y$. The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around $y \sim 0.5$. Our first principles calculations show a peak in the topological Hall constant at this value of $y$, related to the strong spin-polarisation predicted for intermediate values of $y$. Half-metallicity is predicted for $y = 0.6$, consistent with the experimentally observed linear magnetoresistance at this composition. Whilst it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for $y \sim 0.5$ are much larger then expected when the very small emergent fields associated with the divergence in the DMI are taken into account.

cond-mat.mtrl-sci↗

Topological Contributions to the Anomalous Nernst and Hall Effect in the Chiral Double-Helimagnetic System

MnP and FeP are show complex magnetic spiral states with geometric phase contributions to the anomalous Hall effect and the topological Hall effect, where both have thermoelectric Nernst counterparts. We use state of the art first principle calculations to show that both Hall and Nernst effects are enhanced in MnP and FeP due to the temperature dependent magnetic texture. At ambient pressure the inversion breaking crystals shows a transition from a double-spiral helimagnetic phase to a topologically trivial magnetic phase. This helimagnetic structure is determined by exchange frustration and the Dzyaloshinskii-Moriya interaction. In the presence of an external magnetic field the magnetic structure transforms into a fan-like phase with a finite spin chirality that gives rise to an effective magnetic field on the order $\sim$1 T. The topological Hall and Nernst effect from this field are comparable or larger to tightly-wound skyrmion systems. Lastly, we show that the topological effects are strongly dependent on the Fermi surface topology, which has strong variations and even sign changes for similar magnetic textures.

cond-mat.mtrl-sci↗

Aviram-Ratner rectifying mechanism for DNA base pair sequencing through graphene nanogaps

We demonstrate that biological molecules such as Watson-Crick DNA base pairs can behave as biological Aviram-Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab-initio non-equilibrium Green's function (NEGF) theory to determine the electrical response of graphene---base-pair---graphene junctions. The results show an asymmetric (rectifying) current-voltage response for the Cytosine-Guanine base pair adsorbed on a graphene nanogap. In sharp contrast we find a symmetric response for the Thymine-Adenine case. We propose applying the asymmetry of the current-voltage response as a sensing criterion to the technological challenge of rapid DNA sequencing via graphene nanogaps.

cond-mat.mes-hall↗