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Jacob Henshaw

Publications and source records attributed to Jacob Henshaw.

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Homogeneous Microwave Delivery for Quantum Sensing with Nitrogen-Vacancy Centers at High Pressures

Nitrogen vacancy (NV) centers have been demonstrated as a useful tool in high pressure environments. However, the geometry and small working area of the diamond anvil cells (DACs) used to apply pressure present a challenge to effective delivery of microwave (mw) fields. We designed and characterized a novel slotted design for mw transmission to nitrogen-vacancy centers (NVs) in a diamond anvil cell via zero-field and in-field optically detected magnetic resonance (ODMR) measurements across pressures between 1 and 48 GPa. The mw fields experienced by NVs across the diamond culet was calculated from Rabi frequency and found to be higher and more uniform than those generated by an equivalent simple mw line, which will improve performance for wide-field, high-pressure measurements to probe spatial variations across samples under pressure.

cond-mat.mtrl-sci

Landau Zener Interaction Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride

Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using $^{10}$B and $^{15}$N isotopes (h$^{10}$B$^{15}$N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater $|0\rangle\rightarrow|-1\rangle$ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.

quant-ph

Wide-field microwave magnetic field imaging with nitrogen-vacancy centers in diamond

Non-invasive imaging of microwave (MW) magnetic fields with microscale lateral resolution is pivotal for various applications, such as MW technologies and integrated circuit failure analysis. Diamond nitrogen-vacancy (NV) center magnetometry has emerged as an ideal tool, offering $μ$m-scale resolution, millimeter-scale field of view, high sensitivity, and non-invasive imaging compatible with diverse samples. However, up until now, it has been predominantly used for imaging of static or low-frequency magnetic fields or, concerning MW field imaging, to directly characterize the same microwave device used to drive the NV spin transitions. In this work we leverage an NV center ensemble in diamond for wide-field imaging of MW magnetic fields generated by a test device employing a differential measurement protocol. The microscope is equipped with a MW loop to induce Rabi oscillations between NV spin states, and the MW field from the device-under-test is measured through local deviations in the Rabi frequency. This differential protocol yields magnetic field maps of a 2.57 GHz MW field with a sensitivity of $\sim$ 9 $μ$T Hz$^{-1/2}$ for a total measurement duration of $T = 357$ s, covering a $340\times340$ $μ$m$^2$ field of view with a $μ$m-scale spatial resolution and a DUT input power dynamic range of 30 dB. This work demonstrates a novel NV magnetometry protocol, based on differential Rabi frequency measurement, that extends NV wide-field imaging capabilities to imaging of weak MW magnetic fields that would be difficult to measure directly through standard NV Rabi magnetometry.

physics.app-ph

Quantum Instrumentation Control Kit -- Defect Arbitrary Waveform Generator (QICK-DAWG): A Quantum Sensing Control Framework for Quantum Defects

Quantum information communication, sensing, and computation often require complex and expensive instrumentation resulting in a large entry barrier. The Quantum Instrumentation Control Kit (QICK) overcomes this barrier for superconducting qubits with a collection of software and firmware for state-of-the-art radio frequency system on chip (RFSoC's) field programmable gate architecture (FPGA) chips. Here we present a software and firmware extension to QICK, the Quantum Instrumentation Control Kit - Defect Arbitrary Waveform Generator (QICK-DAWG), which is an open-source software and firmware package that supports full quantum control and measurement of nitrogen-vacancy defects in diamond and other quantum defects using RFSoC FPGAs. QICKDAWG extends QICK to the characterization of nitrogen-vacancy defects and other diamond quantum defects by implementing DC-1 GHz readout, AOM or gated laser control, and analog or photon counting readout options. QICK-DAWG also adds pulse sequence programs and data analysis scripts to collect and characterize photoluminescence (PL) intensity, optically detected magnetic resonance (ODMR) spectra, PL readout windows, Rabi oscillations, Ramsay interference spectra, Hahn echo spin-spin relaxation times T$_2$, and spin-lattice relaxation times T$_1$. We demonstrate that QICK-DAWG is a powerful new paradigm of open source quantum hardware that significantly lowers the entry barrier and cost for quantum sensing using quantum defects.

quant-ph

Fabrication of thin diamond membranes by Ne$^+$ implantation

Color centers in diamond are one of the most promising tools for quantum information science. Of particular interest is the use of single-crystal diamond membranes with nanoscale-thickness as hosts for color centers. Indeed, such structures guarantee a better integration with a variety of other quantum materials or devices, which can aid the development of diamond-based quantum technologies, from nanophotonics to quantum sensing. A common approach for membrane production is what is known as "smart-cut", a process where membranes are exfoliated from a diamond substrate after the creation of a thin sub-surface amorphous carbon layer by He$^+$ implantation. Due to the high ion fluence required, this process can be time-consuming. In this work, we demonstrated the production of thin diamond membranes by neon implantation of diamond substrates. With the target of obtaining membranes of $\sim$ 200 nm thickness and finding the critical damage threshold, we implanted different diamonds with 300 keV Ne$^+$ ions at different fluences. We characterized the structural properties of the implanted diamonds and the resulting membranes through SEM, Raman spectroscopy, and photoluminescence spectroscopy. We also found that a SRIM model based on a two-layer diamond/sp$^2$-carbon target better describes ion implantation, allowing us to estimate the diamond critical damage threshold for Ne$^+$ implantation. Compared to He$^+$ smart-cut, the use of a heavier ion like Ne$^+$ results in a ten-fold decrease in the ion fluence required to obtain diamond membranes and allows to obtain shallower smart-cuts, i.e. thinner membranes, at the same ion energy.

physics.app-ph

Mitigation of Nitrogen Vacancy Ionization from Material Integration for Quantum Sensing

The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV $T_1$ relaxometry measurements.

cond-mat.mes-hall

Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

physics.app-ph

Spin dynamics of a solid-state qubit in proximity to a superconductor

A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work, however, overlooks the complex interplay between either system and the environment created by the color center host. Here we use an all-diamond scanning probe to investigate the spin dynamics of a single nitrogen-vacancy (NV) center proximal to a high-critical-temperature superconducting film in the presence of a weak magnetic field. We find that the presence of the superconductor increases the NV spin coherence lifetime, a phenomenon we tentatively rationalize as a change in the electric noise due to a superconductor-induced redistribution of charge carriers near the NV site. We build on these findings to demonstrate transverse-relaxation-time-weighted imaging of the superconductor film. These results shed light on the complex surface dynamics governing the spin coherence of shallow NVs while simultaneously paving the route to new forms of noise spectroscopy and imaging of superconductors.

cond-mat.mes-hall

Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond

Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.

cond-mat.mes-hall

A fitting algorithm for optimizing ion implantation energies and fluences

We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).

cond-mat.mtrl-sci

Magnetic-field-induced delocalization in hybrid electron-nuclear spin ensembles

We use field-cycling-assisted dynamic nuclear polarization and continuous radio-frequency (RF) driving over a broad spectral range to demonstrate magnetic-field-dependent activation of nuclear spin transport from strongly-hyperfine-coupled 13C sites in diamond. We interpret our observations with the help of a theoretical framework where nuclear spin interactions are mediated by electron spins. In particular, we build on the results from a 4-spin toy model to show how otherwise localized nuclear spins must thermalize as they are brought in contact with a larger ancilla spin network. Further, by probing the system response to a variable driving field amplitude, we witness stark changes in the RF-absorption spectrum, which we interpret as partly due to contributions from heterogeneous multi-spin sets, whose 'zero-quantum' transitions become RF active thanks to the hybrid electron-nuclear nature of the system. These findings could prove relevant in applications to dynamic nuclear polarization, spin-based quantum information processing, and nanoscale sensing.

cond-mat.mes-hall

Optically pumped spin polarization as a probe of many-body thermalization

The interplay between disorder and transport is a problem central to the understanding of a broad range of physical processes, most notably the ability of a system to reach thermal equilibrium. Disorder and many body interactions are known to compete, with the dominance of one or the other giving rise to fundamentally different dynamical phases. Here we investigate the spin diffusion dynamics of 13C in diamond, which we dynamically polarize at room temperature via optical spin pumping of engineered color centers. We focus on low-abundance, strongly hyperfine-coupled nuclei, whose role in the polarization transport we expose through the integrated impact of variable radio-frequency excitation on the observable bulk 13C magnetic resonance signal. Unexpectedly, we find good thermal contact throughout the nuclear spin bath, virtually independent of the hyperfine coupling strength, which we attribute to effective carbon-carbon interactions mediated by the electronic spin ensemble. In particular, observations across the full range of hyperfine couplings indicate the nuclear spin diffusion constant takes values up to two orders of magnitude greater than that expected from homo-nuclear spin couplings. Our results open intriguing opportunities to study the onset of thermalization in a system by controlling the internal interactions within the bath.

quant-ph

Two-electron-spin ratchets as a platform for microwave-free dynamic nuclear polarization of arbitrary material targets

Optically-pumped color centers in semiconductor powders can potentially induce high levels of nuclear spin polarization in surrounding solids or fluids at or near ambient conditions, but complications stemming from the random orientation of the particles and the presence of unpolarized paramagnetic defects hinder the flow of polarization beyond the defect's host material. Here, we theoretically study the spin dynamics of interacting nitrogen-vacancy (NV) and substitutional nitrogen (P1) centers in diamond to show that outside protons spin-polarize efficiently upon a magnetic field sweep across the NV-P1 level anti-crossing. The process can be interpreted in terms of an NV-P1 spin ratchet, whose handedness - and hence the sign of the resulting nuclear polarization - depends on the relative timing of the optical excitation pulse. Further, we find that the polarization transfer mechanism is robust to NV misalignment relative to the external magnetic field, and efficient over a broad range of electron-electron and electron-nuclear spin couplings, even if proxy spins feature short coherence or spin-lattice relaxation times. Therefore, these results pave the route towards the dynamic nuclear polarization of arbitrary spin targets brought in proximity with a diamond powder under ambient conditions.

quant-ph

Spin readout via spin-to-charge conversion in bulk diamond nitrogen-vacancy ensembles

We demonstrate optical readout of ensembles of nitrogen-vacancy(NV) center spins in a bulk diamond sample via spin-to-charge conversion. A high power 594 nm laser is utilized to selectively ionize these paramagnetic defects in the spin state with a contrast of up to 12%. In comparison with the conventional 520 nm spin readout, spin-to-charge-conversion-based readout provides higher signal-to-noise ratio, with tenfold sensing measurement speedup for millisecond long pulse sequences. This level of performance was achieved for an NV- ionization of only 25%, limited by the ionization and readout laser powers. These observations pave the way to a range of high-sensitivity metrology applications where the use of NV- ensembles in bulk diamond has proven useful, including sensing and imaging of target materials overlaid on the diamond surface.

cond-mat.mes-hall

On-Demand Generation of Neutral and Negatively-Charged Silicon-Vacancy Centers in Diamond

Point defects in wide-bandgap semiconductors are emerging as versatile resources for nanoscale sensing and quantum information science but our understanding of the photo-ionization dynamics is presently incomplete. Here we use two-color confocal microscopy to investigate the dynamics of charge in Type 1b diamond hosting nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers. By examining the non-local fluorescence patterns emerging from local laser excitation, we show that in the simultaneous presence of photo-generated electrons and holes, SiV (NV) centers selectively transform into the negative (neutral) charge state. Unlike NVs, 532 nm illumination ionizes SiV- via a single photon process thus hinting at a comparatively shallower ground state. In particular, slower ionization rates at longer wavelengths suggest the latter lies approximately ~1.9 eV below the conduction band minimum. Building on the above observations we demonstrate on-demand SiV and NV charge initialization over large areas via green laser illumination of variable intensity.

cond-mat.mes-hall

Long-term data storage in diamond

The negatively-charged nitrogen-vacancy (NV-) center in diamond is the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Although most work so far has focused on the NV- optical and spin properties, control of the charge state promises complementary opportunities. One intriguing possibility is the long-term storage of information, a notion we hereby introduce using NV rich, type-1b diamond. As a proof of principle, we use multi-color optical microscopy to read, write, and reset arbitrary data sets with 2-D binary bit density comparable to present digital-video-disk (DVD) technology. Leveraging on the singular dynamics of NV- ionization, we encode information on different planes of the diamond crystal with no cross talk, hence extending the storage capacity to three dimensions. Further, we correlate the center's charge state and nuclear spin polarization of the nitrogen host, and show that the latter is robust to a cycle of NV- ionization and recharge. In combination with super-resolution microscopy techniques, these observations provide a route towards sub-diffraction NV charge control, a regime where the storage capacity could exceed present technologies.

cond-mat.mes-hall

Optical patterning of trapped charge in nitrogen-doped diamond

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here we use two-color optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion, and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen upon localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories.

cond-mat.mes-hall