arXiv subjects

Jacob J. Wisser

Publications and source records attributed to Jacob J. Wisser.

4 recordsLinked to original sources

arXiv2021

Charge-Spin Interconversion in Epitaxial Pt Probed by Spin-Orbit Torques in a Magnetic Insulator

We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable damping-like SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of $\approx$0.8 in epitaxial Pt. Our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.

cond-mat.mes-hall↗

arXiv2019

Damping enhancement in coherent ferrite/insulating-paramagnet bilayers

High-quality epitaxial ferrites, such as low-damping MgAl-ferrite (MAFO), are promising nanoscale building blocks for all-oxide heterostructures driven by pure spin current. However, the impact of oxide interfaces on spin dynamics in such heterostructures remains an open question. Here, we investigate the spin dynamics and chemical and magnetic depth profiles of 15-nm-thick MAFO coherently interfaced with an isostructural $\approx$1-8-nm-thick overlayer of paramagnetic CoCr$_2$O$_4$ (CCO) as an all-oxide model system. Compared to MAFO without an overlayer, effective Gilbert damping in MAFO/CCO is enhanced by a factor of $>$3, irrespective of the CCO overlayer thickness. We attribute this damping enhancement to spin scattering at the $\sim$1-nm-thick chemically disordered layer at the MAFO/CCO interface, rather than spin pumping or proximity-induced magnetism. Our results indicate that damping in ferrite-based heterostructures is strongly influenced by interfacial chemical disorder, even if the thickness of the disordered layer is a small fraction of the ferrite thickness.

cond-mat.mtrl-sci↗

arXiv2016

Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe$_2$ two-dimensional crystal

Nanowires of two-dimensional (2D) crystals of type-II superconductor NbSe$_2$ prepared by electron-beam lithography were studied, focusing on the effect of the motion of Abrikosov vortices. We present magnetoresistance measurements on these nanowires and show features related to vortex crossing, trapping, and pinning. The vortex crossing rate was found to vary non-monotonically with the applied field, which results in non-monotonic magnetoresistance variations in agreement with theoretical calculations in the London approximation. Above the lower critical field, $H_{c1}$, the crossing rate is also influenced by vortices trapped by sample boundaries or pinning centers, leading to sample-specific magnetoresistance patterns. We show that the local pinning potential can be modified by intentionally introducing surface adsorbates, making the magnetoresistance pattern a "magneto fingerprint" of the sample-specific configuration of vortex pinning centers in a 2D crystal superconducting nanowire.

cond-mat.supr-con↗

arXiv2013

Single-crystal superconducting nanowires of NbSe$_2$ fabricated by reactive plasma etching

We present the preparation and measurements of nanowires of single-crystal NbSe$_2$. These nanowires were prepared on ultrathin ($\lesssim10\text{ nm}$) flakes of NbSe$_2$ mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30~nm and cross-sectional areas as low as 270 nm$^2$ were measured for the first time.

cond-mat.supr-con↗