arXiv subjects

Jacqueline Marböck

Publications and source records attributed to Jacqueline Marböck.

2 recordsLinked to original sources

arXiv2026

Self-Assembled Telecom Color Centers in Silicon and Their Growth Environment

Artificial atoms based on color centers in silicon (SiCCs) have recently emerged as promising candidates for highly integrable and scalable key components in photonic quantum technology, including telecom single-photon sources and spin memory devices. A novel all-epitaxial fabrication technique for SiCCs, based on ultra-low-temperature (ULT) molecular beam epitaxy (MBE), addresses limitations of conventional fabrication via ion implantation, such as vertical ion straggle and collateral crystal lattice damage. This method solely relies on self-assembly of SiCCs during kinetically-limited growth of (carbon-doped) Si(:C) at ULTs <~350°C. The latter requires an extraordinary pristine growth environment to prevent unintended defect formation caused by the incorporation of impurities from the background vapor; however, so far, no study has specifically addressed how exactly the vacuum conditions during epitaxy influence SiCC formation, their optical properties, and the quality of the surrounding crystal matrix. Here, we investigate the impact of the growth pressure and the substrate temperature on the self-assembly and photoluminescence (PL) properties of important SiCCs, such as W, G, G', and T centers. Further, we use PL and Doppler broadening variable energy positron annihilation spectroscopy to emphasize the role of the growth pressure in suppressing the luminescence background, which is crucial for advancing quantum photonics applications.

cond-mat.mes-hall↗

arXiv2024

A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect semiconductor, is a poor light emitter. Here, we identify conceptionally simple Si/Si$_{1-x}$Ge$_x$/Si double heterostructures (DHS) with large Ge content ($x \gtrsim 0.4$) as auspicious gain material suitable for Si-based integrated optics. In particular, using self-consistent Poisson-current transport calculations, we show that Si diodes containing a 16 nm thick Si$_{1-x}$Ge$_x$ layer of high crystalline quality, centered at the p-n junction, results in efficient carrier accumulation in the DHS and gain if the diode is driven in forward direction. Despite the high strain, we unambiguously demonstrate that such prior unattainable defect-free DHS can be fabricated using ultra-low temperature epitaxy at pristine growth pressures. Telecom light emission is persistent up to 360 K, and directly linked to a ~160 meV high conduction band barrier for minority electron injection. This epitaxy approach allows further increasing the Ge content in the DHS and creating dot-in-well heterostructures for which even higher gains are predicted. Thus, the surprisingly facile DHS presented here can be an essential step toward novel classes of group-IV optoelectronic devices for silicon photonics.

cond-mat.mes-hall↗