Jaimin Kang | Searcharxiv

arXiv2026

Reconfigurable field-free spin Hall nano-oscillators enabled by crystallographic anisotropy in epitaxial Co/Pt

Spin Hall nano-oscillators (SHNOs) are nanoscale microwave sources for wireless communication, neuromorphic computing and oscillator-based Ising machines, but conventional devices require a global magnetic bias. Here we replace this bias through crystallographic anisotropy in epitaxial Co/Pt. Growth of hcp Co with its c-axis in the film plane produces an anisotropy field of about 0.36 T and enables field-free auto-oscillations above 10 GHz in nanoconstriction SHNOs. The active current polarity is selected by the remanent magnetization, providing nonvolatile reconfiguration of the oscillation state. Micro-focused Brillouin light scattering confirms that the nonlinear response is confined to the nanoconstriction region. Lithographic control of the angle between the current and anisotropy axes tunes the excitation threshold and drives two spectral branches from separated modes to a dominant single branch, consistent with mutual synchronization. These results establish epitaxial crystallographic anisotropy as a route to reconfigurable field-free spintronic oscillators and oscillator networks.

cond-mat.mes-hall↗

arXiv2025

Octupole-driven spin torque switching of antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection and control of magnetic order through the tunneling magnetoresistance (TMR) and spin-transfer torque (STT) effects, respectively. It was long assumed that neither of these effects could be sizeable in all-antiferromagnetic tunnel junctions (AATJs), since they exhibit no net magnetization. Recently, however, it was shown that AATJs based on chiral antiferromagnets do exhibit TMR due to their non-relativistic momentum-dependent spin polarization and cluster magnetic octupole moment (CMO), which are manifestations of their spin-split band structure. However, the reciprocal effect, i.e., the antiferromagnetic counterpart of STT, has been assumed non-existent due to the total electric current being spin-neutral. Here, we report nanoscale AATJs exhibiting this reciprocal effect, which we term octupole-driven spin-transfer torque (OTT). We demonstrate current-induced OTT switching of PtMn3|MgO|PtMn3 AATJs, exhibiting a TMR value of 363% at room temperature and switching current densities of the order of 10 MA/cm2. Our theoretical modeling explains the origin of OTT in terms of the imbalance between intra- and inter-sublattice spin currents across the AATJ, and equivalently, in terms of the non-zero net cluster octupole polarization of each PtMn3 layer. This work establishes a new materials platform for antiferromagnetic spintronics and provides a pathway towards deeply scaled magnetic memory and room-temperature terahertz technologies.

cond-mat.mtrl-sci↗