Jakob Declercq | Searcharxiv

arXiv2026

Baudrate- and Reach-Flexible All-Optical Equalization with a Co-Packaged Photonic Reservoir and Receiver

Intensity-modulation direct-detection links must support increasing baudrates and transmission distances while operating under stringent power and cost constraints. However, as data rates and reaches increase, chromatic dispersion induces stronger inter-symbol interference and, after direct detection, frequency-selective fading, thus requiring increasingly powerful equalization. In conventional receivers, this translates into digital equalization whose complexity scales unfavorably with data rate. Photonic-domain equalization offers a hardware-based alternative that operates naturally at line rate and mitigates frequency fading. However, prior demonstrations were not readily adaptable for different rate and/or reach operation. In this paper, we experimentally demonstrate all-optical equalization across 10-46 Gbaud and 10-250 km SSMF in the C-band enabled solely through retraining of the readout layer, achieving up to four orders of magnitude BER improvement over standard DSP equalization. The demonstrator comprises a 16-node spatially multiplexed reservoir, programmable on-chip readout, and co-packaged receiver front-end. To our knowledge, this is the first co-packaged photonic reservoir receiver and the first demonstration of simultaneous baudrate- and reach-flexible equalization using a fixed-topology integrated photonic circuit.

physics.optics↗

arXiv2025

A high-speed heterogeneous lithium tantalate silicon photonics platform

The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prominence. The platform combines modulators, switches, photodetectors and low-loss waveguides on a single chip. However, emerging standards like 1600ZR+ potentially exceed the capabilities of silicon-based modulators. To address these limitations, thin-film lithium niobate has been proposed as an alternative to silicon photonics, offering a low voltage-length product and exceptional high-speed modulation properties. More recently, the first demonstrations of thin-film lithium tantalate circuits have emerged, addressing some of the disadvantages of lithium niobate enabling a reduced bias drift and enhanced resistance to optical damage. As such, making it a promising candidate for next-generation photonic platforms. However, a persistent drawback of such platforms is the lithium contamination, which complicates integration with CMOS fabrication processes. Here, we present for the first time the integration of lithium tantalate onto a silicon photonics chip. This integration is achieved without modifying the standard silicon photonics process design kit. Our device achieves low half-wave voltage (3.5 V), low insertion loss (2.9 dB) and high-speed operation (> 70 GHz), paving the way for next-gen applications. By minimising lithium tantalate material use, our approach reduces costs while leveraging existing silicon photonics technology advancements, in particular supporting ultra-fast monolithic germanium photodetectors and established process design kits.

physics.optics↗