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Jakob Henz

Publications and source records attributed to Jakob Henz.

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Optical Readout of Reconfigurable Layered Magnetic Domain Structure in CrSBr

The van der Waals magnetic semiconductor CrSBr combines multistable magnetic order with strong light--matter coupling, enabling optical access to a rich and reconfigurable layered magnetic domain structure. A purely optical, non-destructive, and non-contact readout of layered magnetic configurations is realized here by magneto-reflectance measurements and interpreted using an optical multilayer model. The magnetic state is tunable by applied magnetic fields and by interfacing CrSBr with the antiferromagnet MnPS$_3$. Applying an external magnetic field along the easy axis drives the hysteretic antiferromagnetic--to--ferromagnetic transition, which is not universally binary but instead develops through a cascade of intermediate magnetic configurations whose multiplicity and stability scale systematically with layer thickness and can be tailored by magnetic interfaces. The intertwined optical and magnetic properties of CrSBr provide a readout mechanism for information encoded in and processed through its magnetic configuration that is compatible with modern on- and off-chip photonic and electronic technologies. These properties identify CrSBr as a promising platform for intelligent matter and for spin-optoelectronics, in particular for neuromorphic architectures that can learn and evolve in response to changing environments.

cond-mat.mes-hall

Dielectric Tensor of CrSBr from Spectroscopic Imaging Ellipsometry

Chromium sulfur bromide (CrSBr) is a magnetic van der Waals semiconductor with a direct bandgap and pronounced anisotropy in its electronic, optical, spin and lattice degrees of freedom. Here, we employ spectroscopic imaging ellipsometry (SIE) and Mueller-matrix analysis to determine the full dielectric tensor of paramagnetic CrSBr thin films. Our measurements reveal optical anisotropy, characterized by three distinct diagonal components of the dielectric tensor. The in-plane elements are dominated by prominent excitonic resonances polarized along the two main crystallographic axes. Two main excitonic bands (A and B excitons) centered around 1.3eV and 1.7eV, respectively, are identified; the A-exciton polarized along the b-crystallographic direction, whereas the B-exciton appears to consist of two nearly degenerate contributions polarized along two orthogonal in-plane crystal axes. These results provide fundamental insight into anisotropic light-matter interactions in CrSBr, relevant for future spin-optoelectronic and photonic applications.

cond-mat.mtrl-sci

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate phase-selective synthesis of large-area, crystalline 2D Ag films via defect-engineered confinement heteroepitaxy (CHet) at the epitaxial graphene/silicon carbide (EG/SiC) interface. By tuning graphene growth and post-growth defect introduction, two distinct Ag phases are achieved with disparate properties: a nearly commensurate Ag(1) lattice stabilized by vacancy and line defects in epitaxial graphene, and a denser Ag(2) phase preferentially grown with sp3-rich zero-layer graphene. Structural and spectroscopic characterization confirm lattice registry with the SiC substrate, while theoretical calculations reveal a thermodynamic preference for Ag(2) but an easier nucleation for Ag(1). Both phases are found to be semiconducting, with the Ag(2) phase exhibiting slightly enhanced n-doping of graphene. Notably, nonlinear optical measurements reveal a three-order magnitude difference in second-order susceptibility between the two phases, demonstrating promise for phase-tunable 2D metals in reconfigurable optoelectronic and metamaterial platforms.

cond-mat.mtrl-sci