arXiv subjects
Publications and source records attributed to Jakob Wetzel.
This work presents the near-field super-scattering and the near-field thermal emission from 2D hyperbolic crystals as general optical phenomena that link near-field nanophotonics to far-field photonics.
Multiferroic domain walls in functional oxides exhibit properties distinct from the bulk and are increasingly exploited as active elements in nanoelectronic and photonic devices. Deterministic control of domain populations has typically remained limited to local control, or removal with temperature. Here we demonstrate continuous, reversible manipulation of the ferroelastic domain structure in single-crystal LaAlO$_3$ using in-situ uniaxial strain. Combining atomic force microscopy, X-ray diffraction, and Raman spectroscopy with first-principles calculations we map the complete microscopic evolution of the twin domain population through the strain-driven transition from the rhombohedral $R\bar{3}c$ ground state toward the predicted orthorhombic $Fmmm$ phase. Applied strains below $0.5\%$ produce pronounced surface flattening and large-scale domain reorganisation, establishing uniaxial strain as a technically accessible control parameter for ferroelastic domain engineering. These results open a route to active, real-time programming of domain architectures in LaAlO$_3$-based heterostructures, with implications for strain-tunable superconducting interfaces, nanoscale phonon-polariton optics, and ultrafast lattice control.
The control and steering of light at nanometre length scales is crucial for the development of both fundamental science and nanophotonic technologies. Recent advancements have been achieved by exploiting various crystalline anisotropies, allowing for subdiffractional and diffraction-less canalisation of energy. These studies in particular benefit from stacking and twisting of 2D materials, whereas corresponding capabilities of anisotropic bulk crystals are rather unexplored. In this work, we show that ferroelastic twin walls - crystallographically perfect 2D-sheets that separate regions of differently oriented domains - in the distorted perovskite LaAlO3 provide a natural platform for broadband lateral confinement and superb canalisation of light at the nanoscale. Without fabrication processes, the electromagnetic fields localised at such walls exhibit lateral optical sizes up to 260 times smaller than the free-space wavelength. Depending on the adjacent domain orientation and frequency, the twin wall pattern preferentially concentrates or repels the electromagnetic energy, constituting a natural building block towards broadband MIR and THz nanophotonics for polaritonic circuitry.
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to ensure their performance in advanced electronic and optoelectronic applications. This work demonstrates that scattering-type scanning near-field optical microscopy (s-SNOM) can meet the demanding performance requirements for characterizing homoepitaxial GaN devices. Specifically, we show that combining s-SNOM results in the mid-IR and terahertz (THz) spectral ranges can disentangle carrier and lattice changes in a GaN p-i-n diode, which is not possible using one spectral range alone. We observe strong, resonant near-field signals near the LO phonon mode of GaN that correlate well with point-dipole models. This data shows great sensitivity to the local carrier density, with changes on the order of 1018 cm-3 easily resolved experimentally. Further, we demonstrate high sensitivity to sub-surface defects, which remain a significant challenge for other non-destructive techniques. To validate the power of s-SNOM imaging, our results are compared to traditional metrologies, including micro-Raman mapping and Kelvin Probe Force Microscopy (KPFM). Our results show that s-SNOM shows superior resolution and sensitivity to perturbations, highlighting the power of this technique in semiconductor device characterization.
The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material is α-MoO3, which as an orthorhombic crystal boasts three distinct phonon dispersions, providing three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the mid-infrared (MIR). Here, the tunability of both optical and thermal responses in isotopically enriched α-MoO3 (98MoO3, Mo18O3 and 98Mo18O3) are explored. A uniform ~5 % spectral redshift from 18O enrichment is observed in both Raman- and IR-active TO phonons. Both the in- and out-of-plane thermal conductivities for the isotopic variations are reported. Ab initio calculations both replicate experimental findings and analyze the select-mode three-phonon scattering contributions. The HPhPs from each isotopic variation are probed with s-SNOM and their Q- factors are reported. A Q-factor maxima increase of ~50 % along the [100] in the RB2 and ~100 % along the [001] in the RB3 are reported for HPhPs supported in 98Mo18O3. Observations in both real and Fourier space of higher-order HPhP modes propagating in single slabs of isotopically enriched α-MoO3 without the use of a subdiffractional surface scatterer are presented here. This work illustrates the tunability of α-MoO3 for thermal and nanophotonic applications.
Hyperbolic phonon polaritons - hybridized modes arising from the ultrastrong coupling of infrared light to strongly anisotropic lattice vibrations in uniaxial or biaxial polar crystals - enable to confine light to the nanoscale with low losses and high directionality. In even lower symmetry materials, such as monoclinic $β$-Ga$_2$O$_3$ (bGO), hyperbolic shear polaritons (HShPs) further enhance the directionality. Yet, HShPs are intrinsically supported only within narrow frequency ranges defined by the phonon frequencies of the host material. Here, we report spectral tuning of HShPs in bGO by isotopic substitution. Employing near-field optical microscopy to image HShPs in $^{18}$O bGO films homo-epitaxially grown on a $^{16}$O bGO substrate, we demonstrate a spectral redshift of $\sim~40~$cm$^{-1}$ for the $^{18}$O bGO, compared to $^{16}$O bGO. The technique allows for direct observation and a model-free estimation of the spectral shift driven by isotopic substitution without the need for knowledge of the dielectric tensor. Complementary far-field measurements and ab initio calculations - in good agreement with the near-field data - confirm the effectiveness of this estimation. This multifaceted study demonstrates a significant isotopic substitution induced spectral tuning of HShPs into a previously inaccessible frequency range, creating new avenues for technological applications of such highly directional polaritons.