arXiv subjects

Jakub Železný

Publications and source records attributed to Jakub Železný.

17 recordsLinked to original sources

arXiv2026

Ab initio study of magnetic Cu$_2$Sb compounds related to antiferromagnetic CuMnAs

The antiferromagnetic metal CuMnAs has become a workhorse of antiferromagnetic spintronics. A broad range of phenomena has been demonstrated in this material, most notably current-induced switching and heat-driven quench switching, both first realized in CuMnAs. CuMnAs belongs to a much larger family of intermetallic compounds sharing the tetragonal Cu$_2$Sb-type structure, yet the magnetic properties of most of its members, and their potential for spintronics, have not been studied. Here we report a systematic density functional theory (DFT) study of the magnetic and electronic structure of more than 50 compounds of this family, intended to guide future theoretical and experimental work toward spintronic applications. We find a wide range of magnetic ground states, among them over 20 new antiferromagnetic candidates.

cond-mat.mtrl-sci↗

arXiv2026

Room-temperature antiferromagnetic resonance in NaMnAs

We report on antiferromagnetic resonance experiments in bulk tetragonal NaMnAs -- a room-temperature antiferromagnetic semiconductor. Our results corroborate previous ab initio studies, which propose that NaMnAs is an easy-axis antiferromagnet with the Néel vector oriented along the tetragonal axis. At $ B = 0 $, we find a single antiferromagnetic resonance line at 7 meV and associate it with a doubly degenerate ($ k = 0 $) magnon mode. Its energy softens considerably with increasing $ T $, but remains clearly visible in the data up to room temperature. From the experimental data, we estimate the single-ion anisotropy of the Mn ions in NaMnAs in the range 0.1-0.2 meV, a value that is relatively large compared to other manganese-based antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2026

Symmetr: a Python package for determining symmetry properties of crystals

Condensed matter compounds typically form crystals, which break the rotational and translational invariance of space but remain invariant under a discrete set of symmetry operations. Understanding the effects allowed by this symmetry breaking, as well as the constraints imposed by the crystal structure, is a crucial problem in condensed matter physics. Here, we present a Python package for determining the symmetry-restricted forms of tensors describing physical properties of crystals, focusing particularly on magnetic materials. The primary focus is on response tensors; however, the program can also describe equilibrium properties and other physical properties, such as magnetic interactions. The program can describe the symmetry using the conventional magnetic space groups, as well as using the spin groups that describe the non-relativistic limit. Additional functionality includes the treatment of quantities projected onto a particular site and expansions in the magnetic order parameter. The code can be used either from the command line or via a Python API.

cond-mat.mtrl-sci↗

arXiv2025

Non-Relativistic Anisotropic Magnetoresistance with Collinear and Non-Collinear Magnetic Order

Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that a comparable symmetry lowering can also occur in a non-relativistic limit. Using tight-binding models, density functional theory calculations, and Boltzmann transport theory, we investigate systems with multiple magnetic sublattices, including both collinear and non-collinear antiferromagnets, as well as ferrimagnetic configurations. We show that AMR and related anisotropies can emerge purely from magnetic order, without the need for SOC, and may reach significant magnitudes. The findings are supported by case studies on toy-model lattices and real materials such as MnN, Mn$_3$Sn, and are further interpreted using a symmetry analysis based on Neumann's principle. Material candidates that exhibit non-relativistic anisotropic magnetoresistance are identified by symmetry analysis applied to entries in the MAGNDATA database.

cond-mat.mtrl-sci↗

arXiv2025

Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions

The component of the resistivity tensor $ρ_{ij}$ corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artefacts and ignored. Here, we show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner--Wohlfarth modelling. We then apply our approach to magnetotransport measurements of $\rm Mn_5Si_3$ thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$~K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.

cond-mat.mes-hall↗

arXiv2024

Anomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor

Following the recent observation of anomalous Hall effect in antiferromagnetic hexagonal MnTe thin films, related phenomena at finite frequencies have come into focus. Magnetic circular dichroism (MCD) is the key material property here. In the x-ray range, the XMCD has already been demonstrated and used to visualise domains via photoemission electron microscopy (PEEM). Here we report on MCD in optical range and discuss its microscopic mechanism.

cond-mat.mtrl-sci↗

arXiv2024

Quench switching of Mn2As

We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching.

cond-mat.mtrl-sci↗

arXiv2024

Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.

cond-mat.mtrl-sci↗

arXiv2023

Non-relativistic torque and Edelstein effect in noncollinear magnets

The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and consequently also a current-induced torque can exist even in the absence of the spin-orbit coupling. Using group symmetry analysis, model calculations, and realistic simulations on selected compounds, we identify large classes of non-collinear magnet candidates and demonstrate that the current-driven torque is of similar magnitude as the celebrated spin-orbit torque in conventional transition metal structures. We also show that this torque can exist in an insulating material, which could allow for highly efficient electrical control of magnetic order.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous Nernst effect in Mn$_3$NiN thin films

The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results.

cond-mat.mtrl-sci↗

arXiv2022

High-throughput study of the anomalous Hall effect

Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous Hall effect using automatic high-throughput calculation scheme. We calculate the intrinsic anomalous Hall effect in 2871 ferromagnetic materials. We use these results to study general properties of the anomalous Hall effect such as its dependence on the strength of the spin-orbit coupling or magnetization. We also examine the origin of the anomalous Hall effect in the materials with the largest effect and show that the origin of the large anomalous Hall effect is usually associated with symmetry protected band degeneracies in the non-relativistic electronic structure, typically mirror symmetry protected nodal lines. Additionally, we study the dependence of the anomalous Hall effect on the magnetization direction, showing that in many materials it differs significantly from the commonly assumed expression $\mathbf{j}^\text{AHE} \sim \mathbf{M} \times \mathbf{E}$.

cond-mat.mtrl-sci↗

arXiv2021

Robust spin-transfer torque and magnetoresistance in non-collinear antiferromagnetic junctions

Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and anti-parallel states of the junction. In addition, we show that the non-collinear order results in a spin-transfer torque that is in several key aspects different from the spin-transfer torque in ferromagnetic junctions.

cond-mat.mes-hall↗

arXiv2020

Atomically sharp domain walls in an antiferromagnet

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Efficient Electrical Spin-Splitter Based on Non-Relativistic Collinear Antiferromagnetism

Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-torque concept utilizing antiferromagnetic RuO$_2$ films interfaced with a ferromagnet.

cond-mat.mtrl-sci↗

arXiv2020

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations

The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics of the SHE and to identify materials with a substantial spin Hall conductivities (SHC), we performed high-precision, high-throughput ab initio electronic structure calculations of the intrinsic SHC for over 20,000 non-magnetic crystals. The calculations reveal a strong and unexpected relation of the magnitude of the SHC with the crystalline symmetry, which we show exists because large SHC is typically associated with mirror symmetry protected nodal lines in the band structure. From the new developed database, we identify new promising materials. This includes eleven materials with a SHC comparable or even larger than that the up to now record Pt as well as materials with different types of spin currents, which could allow for new types of spin-obitronics devices.

cond-mat.mtrl-sci↗

arXiv2017

Strong, anisotropic anomalous Hall effect and spin Hall effect in chiral antiferromagnetic compounds Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt)

We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn$_3X$ materials exhibit a non-collinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We point out that Mn$_3$Ga shows a large SHC of about 600 $(\hbar/e)(Ω\cdot cm)^{-1}$. Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagetic materials.

cond-mat.mtrl-sci↗

arXiv2016

Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet

Spin-orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the Néel vector in an antiferromagnet. Using CuMnAs as an example, we formulate symmetry criteria allowing for the co-existence of Dirac quasiparticles and Néel spin-orbit torques. We identify the non-symmorphic crystal symmetry protection of Dirac band crossings whose on and off switching is mediated by the Néel vector reorientation. We predict that this concept, verified by minimal model and density functional calculations in the CuMnAs semimetal antiferromagnet, can lead to a topological metal-insulator transition driven by the Néel vector and to the corresponding topological anisotropic magnetoresistance.

cond-mat.mes-hall↗