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Jakub Mojsiejuk

Publications and source records attributed to Jakub Mojsiejuk.

7 recordsLinked to original sources

Reinforcement learning for spin torque oscillator tasks

We address the problem of automatic synchronisation of the spintronic oscillator (STO) by means of reinforcement learning (RL). A numerical solution of the macrospin Landau-Lifschitz-Gilbert-Slonczewski equation is used to simulate the STO and we train the two types of RL agents to synchronise with a target frequency within a fixed number of steps. We explore modifications to this base task and show an improvement in both convergence and energy efficiency of the synchronisation that can be easily achieved in the simulated environment.

physics.app-ph↗

Towards mutual synchronization of serially connected Spin Torque Oscillators based on magnetic tunnel junctions

Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession, which turns into an AC voltage generator. However, in spintronics, synchronization of two oscillators using a DC signal is still a challenging problem because it requires a certain degree of similarity between devices that are to be synchronized, which may be difficult to achieve due to device parameter distribution during the fabrication process. In this work, we present experimental results on the mechanisms of synchronization of spin-torque oscillators. Devices are based on magnetic tunnel junction with a perpendicularly magnetized free layer and take advantage of a uniform magnetization precision in the presence of the magnetic field and a DC bias. By using an external microwave source, we show the optimal condition for the synchronization of the magnetic tunnel junctions. Finally, we present results on the in-series connection of two junctions and discuss the possible path towards improving oscillation power and linewidth. In addition, using numerical simulations of the coupled oscillators model, we aim to reproduce the conditions of the experiments and determine the tolerance for achieving synchronization.

physics.app-ph↗

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques.

cond-mat.mes-hall↗

Influence of Ferromagnetic Interlayer Exchange Coupling on Current-induced Magnetization Switching and Dzyaloshinskii-Moriya Interaction in Co/Pt/Co Multilayer System

This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable control over the coupling strength. Employing Brillouin Light Scattering to quantify the effective DMI, we explore its potential role in magnetization dynamics and multilevel magnetization switching. Experimental findings show four distinct resistance states under an external magnetic field and spin Hall effect related spin current. We explain this phenomenon based on the asymmetry between Pt/Co and Co/Pt interfaces and the interlayer coupling, which, in turn, influences DMI and subsequently impacts the magnetization dynamics. Numerical simulations, including macrospin, 1D domain wall, and simple spin wave models, further support the experimental observations of multilevel switching and help uncover the underlying mechanisms. Our proposed explanation, supported by magnetic domain observation using polar-magnetooptical Kerr microscopy, offers insights into both the spatial distribution of magnetization and its dynamics for different IECs, thereby shedding light on its interplay with DMI, which may lead to potential applications in storage devices.

cond-mat.mes-hall↗

A comprehensive simulation package for analysis of multilayer spintronic devices

We present cmtj - a comprehensive simulation package that allows large-scale macrospin simulations for a variety of multilayer spintronics devices. Apart from conventional static simulations, such as magnetoresistance and magnetisation hysteresis loops, cmtj implements a mathematical model of dynamic experimental techniques commonly used for spintronics devices characterisation, for instance: spin diode ferromagnetic resonance, pulse-induced microwave magnetometry, or harmonic Hall voltage measurements. We demonstrate the accuracy of the macrospin simulations on a variety of examples, accompanied by some experimental results.

cond-mat.mtrl-sci↗

Numerical Model Of Harmonic Hall Voltage Detection For Spintronic Devices

We present a numerical macrospin model for harmonic voltage detection in multilayer spintronic devices. The core of the computational backend is based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines high performance with satisfactory, for large-scale applications, agreement with the experimental results. We compare the simulations with the experimental findings in Ta/CoFeB bilayer system for angular- and magnetic field-dependent resistance measurements, electrically detected magnetisation dynamics, and harmonic Hall voltage detection. Using simulated scans of the selected system parameters such as the polar angle $θ$, magnetisation saturation ($μ_\textrm{0}M_\textrm{s}$) or uniaxial magnetic anisotropy ($K_\textrm{u}$) we show the resultant changes in the harmonic Hall voltage, demonstrating the dominating influence of the $μ_\textrm{0}M_\textrm{s}$ on the first and second harmonics. In the spin-diode ferromagnetic resonance (SD-FMR) technique resonance method the ($μ_\textrm{0}M_\textrm{s}$, $K_\textrm{u}$) parameter space may be optimised numerically to obtain a set of viable curves that fit the experimental data.

physics.app-ph↗

High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.

physics.app-ph↗