arXiv subjects

Jakub Ziembicki

Publications and source records attributed to Jakub Ziembicki.

6 recordsLinked to original sources

arXiv2026

Hydrostatic Pressure Driven Band Gap Tuning and Self-Trapped Exciton Formation in (4FPEA)$_2$SnBr$_{4}$ Halide Perovskite

Two-dimensional tin halide perovskites provide a highly tunable platform for exciton phonon coupling and local lattice distortions, enabled by their intrinsically soft lattice. We report a combined temperature and pressure dependent photoluminescence study of the layered perovskite (4FPEA)$_{2}$SnBr$_{4}$. At room temperature, its optical response is dominated by near band edge (NBE) excitons, which redshift linearly under hydrostatic pressure up to $\sim$3 GPa, indicating a rigid band edge behavior without phase transitions. Cooling reveals a broad, strongly Stokes shifted self-trapped exciton (STE) emission, evidencing a crossover from delocalized to self localized excitonic states. Strikingly, while NBE emission redshifts under pressure, STE emission exhibits an anomalous blueshift, reflecting pressure induced modification of the exciton phonon energy landscape. In contrast, the iodide analogue (4FPEA)$_{2}$SnI$_{4}$ shows no STE emission under identical conditions, highlighting the critical role of lattice rigidity and dielectric screening in stabilizing self-trapped excitons.

cond-mat.mtrl-sci↗

arXiv2025

Light-hole states and hyperfine interaction in electrically-defined Ge/GeSn quantum dots

We theoretically investigate hole spins confined in a gate-defined quantum dot (QD) embedded in GeSn/Ge/GeSn quantum well (QW) structure. Owing to the tensile strain in the Ge layer, the system effectively realizes a light-hole qubit. We systematically study how various morphological parameters influence the energy spectrum, g-factors, and the hyperfine coupling to the nuclear spin bath. The simulations are carried out using a realistic, fully atomic sp$^3$d$^5$s$^*$ tight-binding model. We also perform complementary DFT calculations of wave functions near the atomic cores and use them to parameterize the hyperfine-interaction Hamiltonian. We evaluate the Overhauser field fluctuations and demonstrate that the strength of the hyperfine coupling for the lowest hole doublet crucially depends on the Sn content in the barrier. We highlight the conduction-valence band mixing, which leads to considerable $s$-type admixtures to the hole states, providing the dominant channel of hyperfine coupling due to the Fermi contact interaction.

cond-mat.mes-hall↗

arXiv2024

Linear dichroism of the optical properties of SnS and SnSe van der Waals crystals

Tin monochalcogendies SnS and SnSe, belonging to a familiy of van der Waals crystals isoelectronic to black phosphorus, are know as enivornmetally-friendly materials promisng for thermoelecric conversion applications. However, they exhibit other desired functionalities, such as intrisic linear dichroism of the optical and electronic properties originating from strongly anisotropic orthorhombic crystal structure. This property makes them perfect candidats for polarization-sensitive photodetectors working in near infrared spectral range. We present a comprehensive study of the SnS and SnSe crystals by means of optical spectroscopy and photoemission spectroscopy, supported by ab initio calcualtions. The studies revealed the high sensitivity of the optical response of both materials to the incident light polarization, which we interpret in terms of the electronic band dispersion and orbital composition of the electronic bands, dictating the selection rules. From the photoemission investigation we determine the ionization potential, electron affinity and work function, which are parameters crucial for the design of devices based on semiconductor heterostructures.

cond-mat.mtrl-sci↗

arXiv2024

Electronic and spectral properties of Ge1-xSnx quantum dots: an atomistic study

In this paper, we study theoretically the electron and spectral properties of Ge1-xSnx systems, including alloys, cubic- and spherical quantum dots. The single-particle electron and hole states are calculated within the sp3d5s* tight-binding approach and used in further modeling of the optical properties. We systematically study the interplay of Sn-driven indirect-direct band-gap transition and the quantum confinement effect in systems of reduced dimensionality. We demonstrate the regime of sizes and composition, where the ground state in Ge1-xSnx quantum dot is optically active. Finally, we calculate absorbance spectra in experimentally-relevant colloidal quantum dots and demonstrate a satisfactory agreement with experimental data.

cond-mat.mes-hall↗

arXiv2024

Electronic and structural properties of group IV materials and their polytypes

Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functionality due to the tunable physical properties of nanostructures compared to bulk materials. This paper presents a comprehensive study on group IV semiconductors and their binaries across four polytypes: 2H, 3C, 4H, and 6H, focusing on their optoelectronic application potential. Deep understanding of these polytypes is particularly relevant for nanowire-based technologies. Through first principles modeling, we examine the structural and electronic properties of these materials, emphasizing their band structure, stability, and the feasibility for light-emitting applications. We use a generalized Ising model to discuss materials stability and tendency for polytypism. We also determine relative band edge positions and employ a six $k\cdot p$ model for a detailed understanding of the materials' electronic properties. Due to the comprehensive nature of this study, we provide insight on the chemical trends present in all of the studied properties. Our theoretical predictions align well with existing experimental data, suggesting new avenues for nanostructure-based device development. The discussion extends to the implications of these findings for the fabrication of optoelectronic devices with the studied IV-IV materials, highlighting the challenges and opportunities for future research in nanowire synthesis and their application.

cond-mat.mtrl-sci↗

arXiv2022

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

In this work we derive a ready-to-use symmetry invariant expansion of the full-zone 30-band k.p Hamiltonian for the Td point group. In order to find respective parameters, the band structures of III-V materials were calculated within a state-of-the-art Density Functional Theory (DFT) approach and used next as targets to adjust the k.p bands. A satisfactory agreement of the k.p model with the DFT band structures, for all the tested zinc blende III-V semiconductors, has been achieved. Values of many of the parameters have not been known so far. We also compare the fitted k.p parameters with the values calculated using momentum matrix elements obtained directly from the DFT.

cond-mat.mes-hall↗