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James C. Hone

Publications and source records attributed to James C. Hone.

At least 37 records · Page 2Linked to original sources

Programmable Nanowrinkle-Induced Room-Temperature Exciton Localization in Monolayer WSe2

Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced super-wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. Detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from these fine wrinkles, and show that the states can be tightly confined to regions < 10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.

cond-mat.mes-hall↗

Coupled Ferroelectricity and Superconductivity in Bilayer $T_d$-MoTe$_2$

Achieving electrostatic control of quantum phases is at the frontier of condensed matter research. Recent investigations have revealed superconductivity tunable by electrostatic doping in twisted graphene heterostructures and in two-dimensional (2D) semimetals such as WTe$_2$. Some of these systems have a polar crystal structure that gives rise to ferroelectricity, in which the interlayer polarization exhibits bistability driven by external electric fields. Here we show that bilayer $T_d$-MoTe$_2$ simultaneously exhibits ferroelectric switching and superconductivity. Remarkably, a field-driven, first-order superconductor-to-normal transition is observed at its ferroelectric transition. Bilayer $T_d$-MoTe$_2$ also has a maximum in its superconducting transition temperature ($T_\textrm{c}$) as a function of carrier density and temperature, allowing independent control of the superconducting state as a function of both doping and polarization. We find that the maximum $T_\textrm{c}$ is concomitant with compensated electron and hole carrier densities and vanishes when one of the Fermi pockets disappears with doping. We argue that this unusual polarization-sensitive 2D superconductor is driven by an interband pairing interaction associated with nearly nested electron and hole Fermi pockets.

cond-mat.supr-con↗

In-plane anisotropy in biaxial ReS2 crystals probed by nano-optical imaging of waveguide modes

Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rhenium disulfide (ReS2) crystals across a wide range of near-infrared frequencies. By tracing the evolution of these modes as a function of crystallographic direction, polarization of the electric field and sample thickness, we have determined the anisotropic dielectric tensor including the elusive out-of-plane response. The excitonic absorption at ~1.5 eV manifests itself as a clear backbending feature in the WM dispersion and a reduction of the quality factors as fully supported by numerical calculations. Our results extend the sensitivity of near-field microscopy towards biaxial anisotropy and provide key insights into the optoelectronic properties of ReS2.

physics.optics↗

Atomically imprinted graphene plasmonic cavities

Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene plasmonic structures using oxidation-activated charge transfer (OCT). We cover graphene with a monolayer of WSe$_2$, which is subsequently oxidized into high work-function WOx to activate charge transfer. Nano-infrared imaging reveals low-loss plasmon polaritons at the WOx/graphene interface. We insert WSe$_2$ spacers to precisely control the OCT-induced carrier density and achieve a near-intrinsic quality factor of plasmons. Finally, we imprint canonical plasmonic cavities exhibiting laterally abrupt doping profiles with single-digit nanoscale precision via programmable OCT. Specifically, we demonstrate technologically appealing but elusive plasmonic whispering-gallery resonators based on free-standing graphene encapsulated in WOx. Our results open avenues for novel quantum photonic architectures incorporating two-dimensional materials.

physics.optics↗

Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice

The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed full electron filling of the moiré superlattice has been reported recently, that at fractional filling, which involves translational symmetry breaking of the underlying superlattice, remains elusive. Here, we demonstrate bandwidth-tuned MITs in a MoSe2/WS2 moiré superlattice at both integer and fractional fillings using the exciton sensing technique. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state, consistent with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a "dielectric catastrophe". Our results support continuous interaction-driven MITs in a two-dimensional triangular lattice and stimulate future explorations of exotic quantum phases, such as quantum spin liquids, in their vicinities.

cond-mat.mtrl-sci↗

Nanoscale Optical Imaging of 2D Semiconductor Stacking Orders by Exciton-Enhanced Second Harmonic Generation

Second harmonic generation (SHG) is a nonlinear optical response arising exclusively from broken inversion symmetry in the electric-dipole limit. Recently, SHG has attracted widespread interest as a versatile and noninvasive tool for characterization of crystal symmetry and emerging ferroic or topological orders in quantum materials. However, conventional far-field optics is unable to probe local symmetry at the deep subwavelength scale. Here, we demonstrate near-field SHG imaging of 2D semiconductors and heterostructures with the spatial resolution down to 20 nm using a scattering-type nano-optical apparatus. We show that near-field SHG efficiency is greatly enhanced by excitons in atomically thin transition metal dichalcogenides. Furthermore, by correlating nonlinear and linear scattering-type nano-imaging, we resolve nanoscale variations of interlayer stacking order in bilayer WSe2, and reveal the stacking-tuned excitonic light-matter-interactions. Our work demonstrates nonlinear optical interrogation of crystal symmetry and structure-property relationships at the nanometer length scales relevant to emerging properties in quantum materials.

physics.optics↗

Nanometer-scale lateral p-n junctions in graphene/$α$-RuCl$_3$ heterostructures

The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multi-pronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy ($\textit{s}$-SNOM) in order to simultaneously probe both the electronic and optical responses of nanobubble p-n junctions. Our STM and STS results reveal that p-n junctions with a band offset of more than 0.6 eV can be achieved over lateral length scale of less than 3 nm, giving rise to a staggering effective in-plane field in excess of 10$^8$ V/m. Concurrent $\textit{s}$-SNOM measurements confirm the utility of these nano-junctions in plasmonically-active media, and validate the use of a point-scatterer formalism for modeling surface plasmon polaritons (SPPs). Model $\textit{ab initio}$ density functional theory (DFT) calculations corroborate our experimental data and reveal a combination of sub-angstrom and few-angstrom decay processes dictating the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for the use of charge-transfer interfaces such as graphene/$α$-RuCl$_3$ to generate p-n nano-junctions.

cond-mat.mes-hall↗

Manipulation of Exciton Dynamics in Single-Layer WSe2 Using a Toroidal Dielectric Metasurface

Recent advances in emerging atomically thin transition metal dichalcogenide semiconductors with strong light-matter interactions and tunable optical properties provide novel approaches for realizing new material functionalities. Coupling two-dimensional semiconductors with all-dielectric resonant nanostructures represents an especially attractive opportunity for manipulating optical properties in both the near-field and far-field regimes. Here, by integrating single-layer WSe2 and titanium oxide (TiO2) dielectric metasurfaces with toroidal resonances, we realized robust exciton emission enhancement over one order of magnitude at both room and low temperatures. Furthermore, we could control exciton dynamics and annihilation by using temperature to tailor the spectral overlap of excitonic and toroidal resonances, allowing us to selectively enhance the Purcell effect. Our results provide rich physical insight into the strong light-matter interactions in single-layer TMDs coupled with toroidal dielectric metasurfaces, with important implications for optoelectronics and photonics applications.

cond-mat.mes-hall↗

Dipolar excitonic insulator in a moire lattice

Two-dimensional (2D) moire materials provide a new solid-state platform with unprecedented controllability for studies of correlated quantum phenomena. To date, experimental studies have focused on the correlated electronic states; the correlated bosonic states in moire materials have remained practically unexplored. Here, we report a correlated dipolar excitonic insulator, a charge insulating state driven by the formation of excitons, in a Coulomb-coupled WSe2 monolayer and WSe2/WS2 moire bilayer at total hole doping density equal to the moire density. The system is a Mott insulator when all the holes reside in the moire layer. Under an out-of-plane electric field, the holes can be continuously transferred to the WSe2 monolayer, but remain strongly bound to the empty moire sites; they form an interlayer exciton fluid in the moire superlattice under a particle-hole transformation. We identify the phase space and determine the charge gap energy of the excitonic insulating state by optical spectroscopy and capacitance measurements, respectively. We further observe the emergence of local magnetic moments in the WSe2 monolayer induced by the strong interlayer Coulomb correlation. Our demonstration of an exciton fluid in a lattice paves the path for realizing correlated bosonic quantum phenomena described by the Bose-Hubbard model in a solid-state system.

cond-mat.str-el↗

Tunable exciton-optomechanical coupling in suspended monolayer MoSe2

The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer TMDs. Here we report the observation of exciton-optomechanical coupling in a suspended monolayer MoSe2 mechanical resonator. By moderate optical pumping near the MoSe2 exciton resonance, we have observed optical damping and anti-damping of mechanical vibrations as well as the optical spring effect. The exciton-optomechanical coupling strength is also gate-tunable. Our observations can be understood in a model based on photothermal backaction and gate-induced mirror symmetry breaking in the device structure. The observation of gate-tunable exciton-optomechanical coupling in a monolayer semiconductor may find applications in nanoelectromechanical systems (NEMS) and in exciton-optomechanics.

cond-mat.mes-hall↗

Evidence of high-temperature exciton condensation in 2D atomic double layers

A Bose-Einstein condensate is the ground state of a dilute gas of bosons, such as atoms cooled to temperatures close to absolute zero. With much smaller mass, excitons (bound electron-hole pairs) are expected to condense at significantly higher temperatures. Here we study electrically generated interlayer excitons in MoSe2/WSe2 atomic double layers with density up to 10^12 cm-2. The interlayer tunneling current depends only on exciton density, indicative of correlated electron-hole pair tunneling. Strong electroluminescence (EL) arises when a hole tunnels from WSe2 to recombine with electron in MoSe2. We observe a critical threshold dependence of the EL intensity on exciton density, accompanied by a super-Poissonian photon statistics near threshold, and a large EL enhancement peaked narrowly at equal electron-hole densities. The phenomenon persists above 100 K, which is consistent with the predicted critical condensation temperature. Our study provides compelling evidence for interlayer exciton condensation in two-dimensional atomic double layers and opens up exciting opportunities for exploring condensate-based optoelectronics and exciton-mediated high-temperature superconductivity.

cond-mat.mes-hall↗

Quantum Criticality in Twisted Transition Metal Dichalcogenides

In moiré heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic phase in twisted WSe$_2$ near half filling of the first moiré subband. We find that the metal-insulator transition as a function of both density and displacement field is continuous. At the metal-insulator boundary, the resistivity displays strange metal behaviour at low temperature with dissipation comparable to the Planckian limit. Further into the metallic phase, Fermi-liquid behaviour is recovered at low temperature which evolves into a quantum critical fan at intermediate temperatures before eventually reaching an anomalous saturated regime near room temperature. An analysis of the residual resistivity indicates the presence of strong quantum fluctuations in the insulating phase. These results establish twisted WSe$_2$ as a new platform to study doping and bandwidth controlled metal-insulator quantum phase transitions on the triangular lattice.

cond-mat.mes-hall↗

Dual-gated graphene devices for near-field nano-imaging

Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible (Ref. 1). In this work, we fully characterize two approaches to realizing nano-optics compatible top-gates: bilayer $\text{MoS}_2$ and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.

cond-mat.mes-hall↗

Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene

Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene (TBG) have been intensely studied. At small twist angle $θ$, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride (hBN), which we use as a TBG substrate, is optically hyperbolic. Our results illustrate new capabilities of nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.

cond-mat.mes-hall↗

Moiré metrology of energy landscapes in van der Waals heterostructures

The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.

cond-mat.mes-hall↗

Highly Confined In-plane Exciton-Polaritons in Monolayer Semiconductors

2D materials support unique excitations of quasi-particles that consist of a material excitation and photons called polaritons. Especially interesting are in-plane propagating polaritons which can be confined to a single monolayer and carry large momentum. In this work, we report the existence of a new type of in-plane propagating polariton, supported on monolayer transition-metal-dicalcogonide (TMD) in the visible spectrum, which has not yet been observed. This 2D in-plane exciton-polariton (2DEP) is described by the coupling of an electromagnetic light field with the collective oscillations of the excitons supported by monolayer TMDs. We expose the specific experimental conditions required for the excitation of the 2DEP and show that these can be created if the TMD is encapsulated with hexagonal-boron-nitride (hBN) and cooled to cryogenic temperatures. In addition, we compare the properties of the 2DEPs with those of surface-plasmons-polaritons (SPPs) at the same spectral range, and find that the 2DEP exhibit over two orders-of-magnitude larger wavelength confinement. Finally, we propose two configurations for the possible experimental observation of 2DEPs.

physics.optics↗

Stripe phases in WSe2/WS2 moiré superlattices

Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions. One representative example is the copper-oxide superconductors, where stripe order is thought to be relevant to the mechanism of high-temperature superconductivity. Identifying and studying the stripe phases in conventional strongly correlated systems are, however, challenging due to the complexity and limited tunability of these materials. Here we uncover stripe phases in WSe2/WS2 moiré superlattices with continuously gate-tunable charge densities by combining optical anisotropy and electronic compressibility measurements. We find strong electronic anisotropy over a large doping range peaked at 1/2 filling of the moiré superlattice. The 1/2-state is incompressible and assigned to a (insulating) stripe crystal phase. It can be continuously melted by thermal fluctuations around 35 K. The domain configuration revealed by wide-field imaging shows a preferential alignment along the high-symmetry axes of the moiré superlattice. Away from 1/2 filling, we observe additional stripe crystals at commensurate filling 1/4, 2/5 and 3/5. The anisotropy also extends into the compressible regime of the system at incommensurate fillings, indicating the presence of electronic liquid crystal states. The observed filling-dependent stripe phases agree with the theoretical phase diagram of the extended Hubbard model on a triangular lattice in the flat band limit. Our results demonstrate that two-dimensional semiconductor moiré superlattices are a highly tunable platform to study the stripe phases and their interplay with other symmetry breaking ground states.

cond-mat.mes-hall↗

Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening

Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moiré bands in a monolayer semiconductor. It relies on reduced dielectric screening of the Coulomb interactions in monolayer semiconductors and their environmental dielectric-dependent electronic band structure. We observe optical transitions between moiré bands in monolayer WSe$_{2}$ when it is placed close to small angle-misaligned graphene on hexagonal boron nitride. The moiré bands are a result of long-range Coulomb interactions, strongly gate-tunable, and can have versatile superlattice symmetries independent of the crystal lattice of the host material. Our result also demonstrates that monolayer semiconductors are sensitive local dielectric sensors.

cond-mat.mtrl-sci↗