arXiv subjects

James F. Scott

Publications and source records attributed to James F. Scott.

13 recordsLinked to original sources

arXiv2019

Plasmon Soft Mode in an Organic-Inorganic Hybrid Perovskite

We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon frequency and linewidth agree with independent measurements, and the impedance analysis reveals a frequency dependence (modelled by a constant phase element, CPE) that can be identified as due to electron-phonon coupling. The dependence of plasmon frequency upon (TC-T) is analogous to that for magnons in magnetic insulators or soft transverse optical phonons in ferroelectrics and ferroelastics, or for phasons in incommensurately modulated insulators.

cond-mat.mtrl-sci↗

arXiv2017

PbTi1-xPdxO3: A New Room-temperature Magnetoelectric Multiferroic Device Material

There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gallium ferrite (GaFeO3). In the present work we report a comprehensive study of the perovskite PbTi1-xPdxO3 with 0 < x < 0.3. Our study includes dielectric, impedance and magnetization measurements, conductivity analysis and study of crystallographic phases present in the samples with special attention paid to minor phases, identified as PdO, PbPdO2, and Pd3Pb. The work is remarkable in two ways: Pd is difficult to substitute into ABO3 perovskite oxides (where it might be useful for catalysis), and Pd is magnetic under only unusual conditions (under strain or internal electric fields). The new material, as a PZT derivative, is expected to have much stronger piezoelectric properties than BiFeO3.

cond-mat.mtrl-sci↗

arXiv2017

Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures

We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications.

cond-mat.mtrl-sci↗

arXiv2016

Towards Resolving Landauer's Paradox Through Direct Observation of Multiscale Ferroelastic-Ferroelectric Interplay

Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic domains switch, i.e. how the polarization changes from one state to another, is yet to be answered fully. There are contradicting models and a wide body of accumulated data which disagree as to whether the switching requires domain nucleation. Moreover, ferroelectric domains switch under electric fields that are supposedly too weak to form nucleation sites, indicating that the level of disorder seen in real systems plays an important role. This longstanding so-called Landauer's paradox is the ferroelectric equivalent to the absence of raindrop formation in a dust-free vacuum, leading to supersaturated vapors that cannot exist otherwise, e.g. in spinodal decompositions or inhomogeneous nucleation environments. Here we show that polarization switching in ferroelectric-ferroelastic systems comprises domain types that differ by symmetry, lengthscale and switching energy. These domains switch simultaneously thanks to intermediate-range order of organized pinning sites, supporting the previously-unexplained coexistence of nucleation-and-growth and nucleation-frustrated mechanisms. Our treatment is applicable to other Kolmogorov-Avrami systems with multi-scale phase transitions. Finally, we demonstrate augmented electromechanical coupling based on the collective motion of pinning sites, which is promising for nano electro-mechanical and low-power switching devices.

cond-mat.mtrl-sci↗

arXiv2016

Ferrielectricity in an Organic Ferroelectric

We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130 K that can be lowered to a Quantum Critical Point at zero Kelvin via Br- or I-substitution, and phases predicted to be antiferroelectric at high pressure and low temperatures. Unusually, the size of the primitive unit cell does not increase. We measure hysteresis loops and polarization below T = 64 K and clear Raman evidence for this transition, as well of another transition near 47-50 K. X-ray and neutron studies below Tc = 130K show there is an antiferroelectric displacement out of plane of two sarcosine groups; but these are antiparallel displacements are of different magnitude, leading to a bias voltage that grows with decreasing T. A monoclinic subgroup C2 may be possible at the lowest temperatures (T<64K or T<48K), but no direct evidence exists for a crystal class lower than orthorhombic.

cond-mat.mtrl-sci↗

arXiv2016

Hydrodynamics of Domain Walls in Multiferroics: Impact on Memory Devices

We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-domain structures in PZTFT are circular or parabolic and involving folding bifurcations. These may have an undesirable impact on ferroelectric thin-film memoriesthat are also ferroelastic.

cond-mat.mtrl-sci↗

arXiv2015

Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films

Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the net switching polarization of ~35 μC/cm2 with an unusually high coercive field of +-1400 kV/cm at room temperature. The PUND measurement also demonstrates the switching polarization of ~26 μC/cm2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. This high value accounts for the observed stability of the polar Pna21 phase over a wide range of temperature up to 1368 K.

cond-mat.mtrl-sci↗

arXiv2015

Quantum electric-dipole liquid on a triangular lattice

Geometric frustrations and quantum mechanical fluctuations may prohibit the formation of long-range ordering even at the lowest temperature, and therefore liquid-like ground states could be expected. A good example is the quantum spin liquid in frustrated magnets that represents an exotic phase of matter and is attracting enormous interests. Geometric frustrations and quantum fluctuations can happen beyond magnetic systems. Here we propose that quantum electric-dipole liquids, analogs to quantum spin liquids, could emerge in frustrated dielectrics where antiferroelectrically coupled small electric dipoles reside on a triangular lattice. The quantum paraelectric hexaferrite BaFe12O19, in which small electric dipoles originated from the off-center displacement of Fe3+ in the FeO5 bipyramids constitute a two-dimensional triangular lattice, represents a promising candidate to generate the anticipated electric-dipole liquid. We present a series of experimental evidences, including dielectric permittivity, heat capacity, and thermal conductivity measured down to 66 mK, to reveal the existence of a nontrivial ground state in BaFe12O19, characterized by itinerant low-energy excitations with a small gap, to which we interpret as an exotic liquid-like quantum phase. The quantum electric-dipole liquids in frustrated dielectrics open up a fresh playground for fundamental physics and may find applications in quantum information and computation as well.

cond-mat.str-el↗

arXiv2015

Electron-Beam Driven Relaxation Oscillations in Ferroelectric Nanodisks

Using a combination of computational simulations, atomic-scale resolution imaging and phenomenological modelling, we examine the underlying mechanism for nanodomain restructuring in lead zirconate titanate (PZT) nanodisks driven by electron beams. The observed subhertz nanodomain dynamics are identified with relaxation oscillations where the charging/discharging cycle time is determined by saturation of charge traps and nanodomain wall creep. These results are unusual in that they indicate very slow athermal dynamics in nanoscale systems.

cond-mat.mtrl-sci↗

arXiv2010

Novel room temperature Multiferroics for Random Access Memory Elements

We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD) [epitaxial] onto Pt/Ti/SiO2/Si(100) and SrTiO3/Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via electrostriction and magnetostriction. Application of modest magnetic field strength ((mu)0H < 1.0 Tesla) destabilizes the long-range ferroelectric ordering and switches the polarization from ca. 22 (mu)C/cm2 (0.22 C/m2) to zero (relaxor state). This offers the possibility of three-state logic (+P, 0, -P) and magnetically switched polarizations. Because the switching is of large magnitude (unlike the very small nC/cm2 values in terbium manganites) and at room-temperature, commercial devices should be possible.

cond-mat.mtrl-sci↗

arXiv2010

Landau Theory of Domain Wall Magnetoelectricity

We calculate the exact analytical solution to the domain wall properties in a multiferroic system with two order parameters that are coupled bi-quadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as BiFeO3, with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films fo this material, in view of the correlation between increasing magnetization and increasing volume fraction of domain walls as films become thinner. The present analysis can be generalized to describe a class of magnetoelectric devices based upon domain walls rather than bulk properties.

cond-mat.mtrl-sci↗

arXiv2009

The beta to gamma (insulator-metal) transition in BiFeO3

High temperature powder neutron diffraction experiments have been conducted around the reported beta-gamma, insulator-metal phase transition (~ 930 C) in BiFeO3. The results demonstrate that while a small volume contraction is observed at the transition temperature, consistent with an insulator-metal transition, both the beta and gamma phase of BiFeO3 exhibit orthorhombic symmetry i.e. no further increase of symmetry occurs under the present experimental conditions, contrary to previous suggestions. Furthermore we observe the gamma orthorhombic phase to persist up to a temperature of approximately 950 C before complete decomposition into Bi2Fe4O9 (and liquid Bi2O3), which subsequently begins to decompose at approximately 960 C.

cond-mat.mtrl-sci↗

arXiv2006

Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}"

Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" (D. Staresinic et al., Phys. Rev. Lett. 96, 046402 (2006)) and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}" (S. Weber et al., Phys. Rev. Lett. 96, 157202 (2006))

cond-mat.mtrl-sci↗