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James Hone

Publications and source records attributed to James Hone.

147 records · Page 9Linked to original sources

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout

The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit to a membrane model, which yields the mass density and built-in strain. Upon removal and addition of mass, we observe changes in both the density and the strain, indicating that adsorbates impart tension to the graphene. Upon cooling, the frequency increases; the shift rate can be used to measure the unusual negative thermal expansion coefficient of graphene. The quality factor increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing many of the basic attributes of monolayer graphene resonators, these studies lay the groundwork for applications, including high-sensitivity mass detectors.

cond-mat.mes-hall↗

Raman Spectroscopy of Graphene under Uniaxial Stress: Phonon Softening and Determination of the Crystallographic Orientation

We present a systematic study of the Raman spectra of optical phonons in graphene monolayers under tunable uniaxial tensile stress. Both the G and 2D bands exhibit significant red shifts. The G band splits into two distinct sub-bands (G+, G-) because of the strain-induced symmetry breaking. Raman scattering from the G+ and G- bands shows a distinctive polarization dependence that reflects the angle between the axis of the stress and the underlying graphene crystal axes. Polarized Raman spectroscopy therefore constitutes a purely optical method for the determination of the crystallographic orientation of graphene.

cond-mat.mtrl-sci↗

Scaling of Resistance and Electron Mean Free Path of Single-Walled Carbon Nanotubes

We present an experimental investigation on the scaling of resistance in individual single walled carbon nanotube devices with channel lengths that vary four orders of magnitude on the same sample. The electron mean free path is obtained from the linear scaling of resistance with length at various temperatures. The low temperature mean free path is determined by impurity scattering, while at high temperature the mean free path decreases with increasing temperature, indicating that it is limited by electron-phonon scattering. An unusually long mean free path at room temperature has been experimentally confirmed. Exponentially increasing resistance with length at extremely long length scales suggests anomalous localization effects.

cond-mat.mes-hall↗