James P. Ashton | Searcharxiv

arXiv2023

Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices

Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO$_2$ MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.

cond-mat.mtrl-sci↗

arXiv2020

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assisted recombination current calculations via stochastic Liouville equations. Spin mixing at this dielectric interface occurs via the hyperfine interaction, which we show can be treated either quantum mechanically or semiclassically, yielding distinctive differences in the current across the interface. By analyzing the bias dependence of NZFMR and EDMR, we find that the recombination in a Si/SiO$_2$ MOSFET is well understood within a semiclassical approach.

cond-mat.mtrl-sci↗