arXiv subjects

Jan Aarts

Publications and source records attributed to Jan Aarts.

26 records · Page 2Linked to original sources

arXiv2018

Quantifying work function differences using low-energy electron microscopy: the case of mixed-terminated strontium titanate

For many applications, it is important to measure the local work function of a surface with high lateral resolution. Low-energy electron microscopy is regularly employed to this end since it is, in principle, very well suited as it combines high-resolution imaging with high sensitivity to local electrostatic potentials. For surfaces with areas of different work function, however, lateral electrostatic fields inevitably associated with work function discontinuities deflect the low-energy electrons and thereby cause artifacts near these discontinuities. We use ray-tracing simulations to show that these artifacts extend over hundreds of nanometers and cause an overestimation of the true work function difference near the discontinuity by a factor of 1.6 if the standard image analysis methods are used. We demonstrate on a mixed-terminated strontium titanate surface that comparing LEEM data with detailed ray-tracing simulations leads to much a more robust estimate of the work function difference.

cond-mat.mtrl-sci↗

arXiv2018

Influence of stoichiometry on interfacial conductance in LaAlO$_3$/SrTiO$_3$ grown by 90$^o$ off-axis sputtering

We report on the fabrication of conducting interfaces between LaAlO$_3$ and SrTiO$_3$ by 90$^o$ off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of $10^{13}$ cm$^{-2}$ at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO$_3$ films while the in-plane lattice constants do not change. Also, the low-temperature sheet resistance increases with increasing growth pressure, leading to an insulating interface when the growth pressure reaches 0.10 mbar. We attribute the structural variations to an increase of the La/Al ratio, which also explains the transition from metallic behavior to insulating behavior of the interfaces. Our research emphasizes the key role of the cation stoichiometry of LaAlO$_3$ in the formation of the conducting interface, and also the control which is furnished by the Ar pressure in the growth process.

cond-mat.mtrl-sci↗

arXiv2017

Little-Parks oscillations with half-quantum fluxoid features in Sr2RuO4 micro rings

In a micro ring of a superconductor with a spin-triplet equal-spin pairing state, a fluxoid, a combined object of magnetic flux and circulating supercurrent, can penetrate as half-integer multiples of the flux quantum. A candidate material to investigate such half-quantum fluxoids is Sr$_\mathsf{2}$RuO$_\mathsf{4}$. We fabricated Sr$_\mathsf{2}$RuO$_\mathsf{4}$ micro rings using single crystals and measured their resistance behavior under magnetic fields controlled with a three-axes vector magnet. Proper Little-Parks oscillations in the magnetovoltage as a function of an axially applied field, associated with fluxoid quantization are clearly observed, for the first time using bulk single crystalline superconductors. We then performed magnetovoltage measurements with additional in-plane magnetic fields. By carefully analyzing both the voltages $V_+$ ($V_-$) measured at positive (negative) current, we find that, above an in-plane threshold field of about 10 mT, the magnetovoltage maxima convert to minima. We interpret this behavior as the peak splitting expected for the half-quantum fluxoid states.

cond-mat.supr-con↗

arXiv2017

Controlling supercurrents and their spatial distribution in ferromagnets

Spin-triplet Cooper pairs induced in ferromagnets form the centrepiece of the emerging field of superconducting spintronics [1,2]. Usually the focus of research is on the spin polarization of the triplets, potentially enabling low-dissipation magnetization switching and domain wall motion. However, the fundamental mechanism for generating triplet pairs [3,4] also permits control over a parameter which has not been addressed before, namely the spatial distribution of the supercurrent. Here we demonstrate this control by tailoring distinct supercurrent pathways in the ferromagnetic weak link of a Josephson junction. Combining micromagnetic simulations with three-dimensional critical current calculations, based on the Usadel description of mesoscopic superconductivity [5], we designed a disk-shaped structure with a magnetic vortex, which induces two distinct supercurrent channels across the junction. The design was successfully tested with superconducting quantum interferometry (SQI). Moreover, we show how the position of the pathways can be controlled by moving the vortex with a magnetic field. This novel approach allows adaptable supercurrent paths to be dynamically reconfigured to switch between different functionalities in the same device.

cond-mat.mes-hall↗

arXiv2017

Long-range proximity effect in Nb-based heterostructures induced by a magnetically inhomogeneous permalloy layer

Odd-frequency triplet Cooper pairs are believed to be the carriers of long-range superconducting correlations in ferromagnets. Such triplet pairs are generated by inhomogeneous magnetism at the interface between a superconductor (S) and a ferromagnet (F). So far, reproducible long-range effects were reported only in complex layered structures designed to provide the magnetic inhomogeneity. Here we show that spin triplet pair formation can be found in simple unstructured Nb/Permalloy (Py = Ni_0.8Fe_0.2)/Nb trilayers and Nb/Py bilayers, but only when the thickness of the ferromagnetic layer ranges between 140 and 250 nm. The effect is related to the emergence of an intrinsically inhomogeneous magnetic state, which is a precursor of the well-known stripe regime in Py that in our samples sets in at thickness larger than 300 nm.

cond-mat.supr-con↗

arXiv2017

Hybrid cold and hot-wall chamber for fast synthesis of uniform graphene

We introduce a novel modality in the CVD growth of graphene which combines the cold-wall and hot-wall reaction chambers. This hybrid mode preserves the advantages of a cold-wall chamber as the fast growth and low fuel consumption, but boosts the quality of the growth towards conventional CVD with hot-wall chambers. The synthesized graphene is uniform and monolayer. The electronic transport measurements shows great improvements in charge carrier mobility compared to graphene synthesized in a normal cold-wall reaction chamber. Our results promise the development of a fast and cost-efficient growth of high quality graphene, suitable for scalable industrial applications.

cond-mat.mtrl-sci↗

arXiv2016

Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates

Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is an intrinsic local property, set by surface morphology and stable across multiple temperature cycles. Our data provides new insights into the MIT of heteroepitaxial nickelates and points to a rich, nanoscale phenomenology in this strongly correlated material.

cond-mat.str-el↗

arXiv2001

Hall-conductivity sign change and fluctuations in amorphous Nb$_{x}$Ge$_{1-x}$ films

The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above to below the mean-field transition field $H_{c2}$) with increasing film thickness. This effect can be understood in terms of a competition between a positive normal and a negative fluctuation contribution to the Hall conductivity.

cond-mat.supr-con↗