arXiv subjects

Jan Mol

Publications and source records attributed to Jan Mol.

5 recordsLinked to original sources

arXiv2025

Engineering Topological Bands in Strained Covalent Organic Frameworks

The tunability of covalent organic frameworks (COFs) opens opportunities to engineer topological electronic phases, including topological insulators (TIs) and higher-order topological insulators (HOTIs)--materials that host in-gap states localized at their edges, hinges, or corners. Here we explore how chemically feasible perturbations can drive triazine-based COFs (CTFs) into topological regimes. Using a tight-binding model on the Honeycomb lattice inspired by the frontier electronic states of CTFs, we show that introducing an effective uniaxial strain--implemented as a modulation of electron hopping on a subset of bonds--can generate a series of distinct topological band structures. This effect can be realized in practice through chemical substitution of linkers along the strained bonds. First-principles calculations demonstrate that replacing biphenyl with pyrene linkers drives a CTF to the brink of a HOTI phase, suggesting a viable route toward topological band-structure engineering in COFs.

cond-mat.mtrl-sci↗

arXiv2025

QAISim: A Toolkit for Modeling and Simulation of AI in Quantum Cloud Computing Environments

Quantum computing offers new ways to explore the theory of computation via the laws of quantum mechanics. Due to the rising demand for quantum computing resources, there is growing interest in developing cloud-based quantum resource sharing platforms that enable researchers to test and execute their algorithms on real quantum hardware. These cloud-based systems face a fundamental challenge in efficiently allocating quantum hardware resources to fulfill the growing computational demand of modern Internet of Things (IoT) applications. So far, attempts have been made in order to make efficient resource allocation, ranging from heuristic-based solutions to machine learning. In this work, we employ quantum reinforcement learning based on parameterized quantum circuits to address the resource allocation problem to support large IoT networks. We propose a python-based toolkit called QAISim for the simulation and modeling of Quantum Artificial Intelligence (QAI) models for designing resource management policies in quantum cloud environments. We have simulated policy gradient and Deep Q-Learning algorithms for reinforcement learning. QAISim exhibits a substantial reduction in model complexity compared to its classical counterparts with fewer trainable variables.

cs.DC↗

arXiv2022

Contrast mechanisms in secondary electron e-beam induced current (SEEBIC) imaging

Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy (SEM)-based technique, electron beam induced current (EBIC) imaging except the signal in STEM is generated by the emission of SEs, hence the name SEEBIC, and in this case the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

cond-mat.mtrl-sci↗

arXiv2016

Interference-based molecular transistors

Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor.

cond-mat.mes-hall↗

arXiv2016

Conductance enlargement in pico-scale electro-burnt graphene nanojunctions

Provided the electrical properties of electro-burnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electro-burnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semi-metallic band structure of graphene and a crossover from electrodes with multiple-path connectivity to single-path connectivity just prior to breaking. Therefore our results suggest that conductance enlargement prior to junction rupture is a signal of the formation of electro-burnt junctions, with a pico-scale current path formed from a single sp2-bond.

cond-mat.mes-hall↗