arXiv subjects

Jan N. Kirchhof

Publications and source records attributed to Jan N. Kirchhof.

14 recordsLinked to original sources

arXiv2026

Efficient Conversion of Optical to Mechanical States Close to the Single-Quantum Level

Coherent interfaces between optical photons and mechanical excitations provide a promising route towards phonon-state engineering and hybrid quantum information processing. Cavity optomechanical systems enable such interfaces via optomechanically induced transparency (OMIT), allowing coherent mapping between traveling optical fields and localized mechanical modes. However, previous implementations of OMIT conversion protocols were limited to classical input signals with large coherent state photon numbers due to room temperature operation and corresponding thermal mechanical noise. Here, we demonstrate efficient low-noise photon-phonon state transfer close to the single-quantum regime in an optomechanical crystal operated at Millikelvin temperatures. Using weak coherent optical input pulses at the few-photon level, we achieve a record-level photon-phonon conversion efficiency of $η=0.76$, a mechanical storage lifetime of $T_\mathrm{1}=7.3~μs$, and a tunable conversion bandwidth exceeding 4.5 MHz. Hanbury Brown-Twiss measurements of the retrieved signal demonstrate the coherent nature of the converted phononic state, evidencing low added thermal noise in the conversion process ($n_\mathrm{th}=9.0$). These results establish optomechanical crystals as efficient optical interfaces to GHz mechanical modes and provide a pathway toward deterministic single-quantum-level mechanical state preparation.

quant-ph↗

arXiv2025

Strain activation of localized states in WSe2

Single-photon emission centers generated by controlled atomic force microscopy (AFM) indentation in monolayer WSe$_2$ on a flexible polymer substrate are explored for applications in quantum technologies. Here, we study the response of these emitters to the polymer substrate's strain state, which is controlled by selecting the indentation force and by gradually thermally annealing the samples. In the indented areas, we observe sharp new photoluminescence (PL) peaks in the regions 1.62--1.68 eV and 1.70--1.73 eV, characterized by sublinear power dependence and spectral wandering. We find that these peaks arise only when the indentation force exceeds a few $μ$N and generally redshift as the applied force increases. Conversely, after thermal annealing ($T < 60^{\circ}$C), WSe$_2$ experiences strain relaxation, leading to a blueshift of the peaks' spectral position and their ultimate disappearance. Our analysis of the peaks' positions vs. strain allows us to draw several conclusions about the nature of these emission. Specifically, we elucidate the roles of excitonic confinement and hybridization between free excitons and defect-related states, a process activated by the strain level. Overall, our approach suggests that the energy of localized emitters may be controlled via strain engineering.

physics.app-ph↗

arXiv2023

Towards tunable graphene phononic crystals

Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons. Many emerging applications of PnCs from solid-state simulators to quantum memories could benefit from the on-demand tunability of the phononic band structure. Here, we demonstrate the fabrication of suspended graphene PnCs in which the phononic band structure is controlled by mechanical tension applied electrostatically. We show signatures of a mechanically tunable phononic band gap. The experimental data supported by simulation suggest a phononic band gap at 28$-$33 MHz in equilibrium, which upshifts by 9 MHz under a mechanical tension of 3.1 Nm$^{-1}$. This is an essential step towards tunable phononics paving the way for more experiments on phononic systems based on 2D materials.

cond-mat.mes-hall↗

arXiv2023

Mechanically-tunable bandgap closing in 2D graphene phononic crystals

We present a tunable phononic crystal which undergoes a phase transition from mechanically insulating to mechanically transmissive (metallic). Specifically, in our simulations for a phononic lattice under biaxial tension ($σ_{xx} =σ_{yy}$ = 0.01 N$/$m), we find a bandgap for out-of-plane phonons in the range of 48.8 - 56.4 MHz, which we can close by increasing the degree of tension uniaxiality ($σ_{xx} / σ_{yy}$) to 1.7. To manipulate the tension distribution, we design a realistic device of finite size, where $σ_{xx} / σ_{yy}$ is tuned by applying a gate voltage to a phononic crystal made from suspended graphene. We show that the phase transition can be probed via acoustic transmission measurements and that the phononic bandgap persists even after the inclusion surface contaminants and random tension variations present in realistic devices. The proposed system acts as a transistor for phonons with an on/off ratio of $10^5$ (100 dB suppression) and is thus a valuable extension for phonon logic applications. In addition, this mechanical analogue to a metal-insulator transition (mMIT) allows tunable coupling between mechanical entities (e.g. mechanical qubits).

cond-mat.mes-hall↗

arXiv2023

Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity

Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectroscopy approaches. In the case of two-dimensional (2D) materials, NMS overcomes limitations inherent to conventional optical methods, such as the complications associated with measurements at high magnetic fields and low temperatures. In this work, we develop a protocol for NMS of 2D materials that yields two orders of magnitude improved sensitivity compared to previous approaches, while being simpler to use. To this end, we use electrical sample actuation, which simplifies the experiment and provides a reliable calibration for greater accuracy. Additionally, the use of low-stress silicon nitride membranes as our substrate reduces the noise-equivalent power to $NEP = 890 fW/\sqrt{Hz}$, comparable to commercial semiconductor photodetectors. We use our approach to spectroscopically characterize a two-dimensional transition metal dichalcogenide (WS$_2$), a layered magnetic semiconductor (CrPS$_4$), and a plasmonic supercrystal consisting of gold nanoparticles.

cond-mat.mes-hall↗

arXiv2022

Nanomechanical spectroscopy of 2D materials

We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as a function of photon energy, we obtain the real and imaginary parts of the dielectric function. Our measurements are unaffected by substrate-related screening and do not require any assumptions on the underling optical constants. This fast ($τ_{rise}$ $\sim$ 135 ns), sensitive (noise-equivalent power = 90 $\frac{pW}{\sqrt{Hz}}$ ), and broadband (1.2 $-$ 3.1 eV, extendable to UV-THz) method provides an attractive alternative to spectroscopic or ellipsometric characterisation techniques.

cond-mat.mes-hall↗

arXiv2022

Strain control of hybridization between dark and localized excitons in a 2D semiconductor

Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we develop a technique capable of straining pristine suspended WSe2 kept at cryogenic temperatures up to 3\% to study the strain behavior of these fragile many-body states. We find that under the application of strain, dark and localized excitons in monolayer WSe2 - a prototypical 2D semiconductor - are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized exciton reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states

cond-mat.mtrl-sci↗

arXiv2022

Generating extreme electric fields in 2D materials by dual ionic gating

We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, thereby producing an intense electric field across the 2DM. We determine the field strength via i) electrical transport measurements and ii) direct measurements of electrochemical potentials of the ILs using semiconducting 2DM, WSe2. The field strength across the material reaches more than 3.5 V/nm, the largest static electric field through any electronic device to date. We demonstrate that this field is strong enough to close the bandgap of trilayer WSe2 driving a semiconductor-to-metal transition. Our approach grants access to previously-inaccessible phenomena occurring in ultrastrong electric fields.

physics.app-ph↗

arXiv2022

Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn

Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales.

cond-mat.mes-hall↗

arXiv2021

Tunable graphene phononic crystal

In the field of phononics, periodic patterning controls vibrations and thereby the flow of heat and sound in matter. Bandgaps arising in such phononic crystals realize low-dissipation vibrational modes and enable applications towards mechanical qubits, efficient waveguides, and state-of-the-art sensing. Here, we combine phononics and two-dimensional materials and explore the possibility of manipulating phononic crystals via applied mechanical pressure. To this end, we fabricate the thinnest possible phononic crystal from monolayer graphene and simulate its vibrational properties. We find a bandgap in the MHz regime, within which we localize a defect mode with a small effective mass of 0.72 ag = 0.002 $m_{physical}$. Finally, we take advantage of graphene's flexibility and mechanically tune a finite size phononic crystal. Under electrostatic pressure up to 30 kPa, we observe an upshift in frequency of the entire phononic system by more than 350%. At the same time, the defect mode stays within the bandgap and remains localized, suggesting a high-quality, dynamically tunable mechanical system.

cond-mat.mes-hall↗

arXiv2020

In situ functionalization of graphene

While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel approach to generate, monitor with time resolution, and functionalize the defects $\textit{in situ}$ without ever exposing them to the ambient. The defects are generated by an energetic Argon plasma and their properties are monitored using $\textit{in situ}$ Raman spectroscopy. We find that these defects are functional, very reactive, and strongly change their density from $\approx 1\cdot10^{13} cm^{-2}$ to $\approx 5\cdot10^{11} cm^{-2}$ upon exposure to air. We perform the proof of principle $\textit{in situ}$ functionalization by generating defects using the Argon plasma and functionalizing them $\textit{in situ}$ using Ammonia functional. The functionalization induces the n-doping with a carrier density up to $5\cdot10^{12} cm^{-2}$ in graphene and remains stable in ambient conditions.

cond-mat.mes-hall↗

arXiv2020

Neutral and charged excitons interplay in non-uniformly strain-engineered WS$_2$

We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shifts and spectral shape changes in the photoluminescence spectra of strained WS$_2$. We interpret these changes as a signature of increased free electron density and resulting conversion of neutral excitons to trions in the region of high strain. Our result establishes non-uniform strain engineering as a novel and useful experimental `knob' for tuning optoelectronic properties of 2D semiconductors.

cond-mat.mes-hall↗

arXiv2019

Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS$_2$

We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the valence and conduction bands of WS$_2$, giving rise to effective forces attracting excitons and trions towards the point of maximum strain underneath the AFM tip. We observe large changes in the photoluminescence spectra of WS$_2$ under strain, which we interpret using a drift-diffusion model. We show that the transport of neutral excitons, a process that was previously thought to be efficient in non-uniformly strained 2D semiconductors and termed as "funneling", is negligible at room temperature in contrast to previous observations. Conversely, we discover that redistribution of free carriers under non-uniform strain profiles leads to highly efficient conversion of excitons to trions. Conversion efficiency reaches $\simeq 100\%$ even without electrical gating. Our results explain inconsistencies in previous experiments and pave the way towards new types of optoelectronic devices.

cond-mat.mes-hall↗

arXiv2019

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy (LFM) and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2) monolayers, on length scales that are relevant for optoelectronic applications. Further, angle-dependent TSM measurements enable us to acquire the fourth-order elastic constants of monolayer WS2 experimentally. Our results facilitate high-throughput and nondestructive microstructure visualization of monolayer TMDCs, insights into their elastic properties, thus providing an accessible tool to support the development of advanced optoelectronic devices based on such two-dimensional semiconductors.

cond-mat.mtrl-sci↗