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Jan Schultheiß

Publications and source records attributed to Jan Schultheiß.

7 recordsLinked to original sources

Beyond Scalar Objectives: Expert-Feedback-Driven Autonomous Experimentation for Scientific Discovery at the Nanoscale

Self-driving laboratories or autonomous experimentation are emerging as transformative platforms for accelerating scientific discovery. Bayesian optimization (BO) is among the most widely used machine learning frameworks for these purposes, but these BO-based frameworks rely on predefined scalar descriptors to guide experimentation. In many situations, the determination of an appropriate scalar descriptor can be challenging, and may fail to capture subtle yet scientifically important phenomena apparent to experts with interdisciplinary insight. To overcome this limitation, here we develop deep-kernel pairwise learning (DKPL), an approach for autonomous microscopy experiments which incorporates human expertise and interdisciplinary scientific knowledge into an active learning loop. Instead of relying on explicit scalar objectives, DKPL enables experts to directly evaluate which experimental output is more promising using interdisciplinary knowledge. DKPL then learns a latent utility function from these expert judgements to guide subsequent autonomous microscopy experiments. We demonstrate DKPL's performance in learning physically meaningful nanoscale structures while effectively prioritizing high-information measurement regions using an experimental model dataset with known ground truth. We further apply DKPL to analyze the character of ferroelectric domain walls, where we find DKPL capable of distinguishing between high and low characteristic domain-wall angles in bismuth ferrite, and able to discover both head-to-head and tail-to-tail domain-wall character in erbium manganite. This development establishes an approach to integrate expert knowledge into autonomous microscopy experiments and demonstrates a pathway toward expert-guided self-driving laboratories capable of addressing scientific problems beyond the limits of scalar-metrics-driven learning.

cs.LG↗

Correlated domain and crystallographic orientation mapping in uniaxial ferroelectric polycrystals by interferometric vector piezoresponse force microscopy

Ongoing advances in scanning probe microscopy techniques are continually expanding the possibilities for nanoscale characterization and correlated studies of functional materials. Here, we demonstrate how a recent extension of piezoresponse force microscopy (PFM), known as interferometric vector PFM, can be utilized for simultaneously mapping the local crystallographic orientations and the domain structure of distributed grains in uniaxial ferroelectric polycrystals. By shifting the laser beam position on the cantilever, direction-dependent piezoresponse signals are acquired analogous to classical vector PFM, but without the need to rotate the sample. Using polycrystalline ErMnO$_{3}$ as a model system, we demonstrate that the reconstructed piezoresponse vectors correlate one-to-one with the crystallographic orientations of the micrometer-sized grains, carrying grain-orientation and domain-related information. We establish a versatile approach for rapid, multimodal characterization of polycrystalline uniaxial ferroelectrics, enabling automated, high-throughput reconstruction of polarization and grain orientations with nanoscale precision.

cond-mat.mtrl-sci↗

Domain-wall driven suppression of thermal conductivity in a ferroelectric polycrystal

A common strategy for reducing thermal conductivity of polycrystalline systems is to increase the number of grain boundaries. Indeed, grain boundaries enhance the probability of phonon scattering events, which has been applied to control the thermal transport in a wide range of materials, including hard metals, diamond, oxides and 2D systems such as graphene. Here, we report the opposite behavior in improper ferroelectric ErMnO3 polycrystals, where the thermal conductivity decreases with increasing grain size. We attribute this unusual relationship between heat transport and microstructure to phonon scattering at ferroelectric domain walls. The domain walls are more densely packed in larger grains, leading to an inversion of the classical grain-boundary-dominated transport behavior. Our findings open additional avenues for microstructural engineering of materials for thermoelectric and thermal management applications, enabling simultaneous control over mechanical, electronic, and thermal properties.

cond-mat.mtrl-sci↗

Confinement-driven inverse domain scaling in polycrystalline ErMnO3

The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically protected vortices on the domain formation in improper ferroelectric ErMnO3 polycrystals, demonstrating inverted domain scaling behavior compared to classical ferroelectrics. We observe that as the grain size increases, smaller domains are formed, which we relate to the interaction of the topological vortices with local strain fields. The inversion of the domain scaling behavior has far-reaching implications, providing fundamentally new opportunities for topology-based domain engineering and the tuning of the electromechanical and dielectric performance of ferroelectrics in general.

cond-mat.mtrl-sci↗

Unveiling AC electronic properties at ferroelectric domain walls

Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was the development of a fundamental framework that explains the emergence of enhanced electronic direct-current (DC) conduction at the domain walls. In this Review, we discuss the much less explored behavior of ferroelectric domain walls under applied alternating-current (AC) voltages. We provide an overview of the recent advances in the nanoscale characterization that allow for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo- to gigahertz regime. We conclude with a discussion about the future direction of the field and novel application opportunities, expanding domain-wall based nanoelectronics into the realm of AC technologies.

cond-mat.mtrl-sci↗

Insulating improper ferroelectric domain walls as robust barrier layer capacitors

We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors.

cond-mat.mtrl-sci↗

Multi-step stochastic mechanism of polarization reversal in rhombohedral ferroelectrics

A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of individual switching processes, and their activation fields. Complementary, the phenomenological Landau-Ginzburg-Devenshire theory is used to analyze the impact of external field and stress on switching barriers showing that residual mechanical stress may promote the fast switching.

cond-mat.mtrl-sci↗