arXiv subjects

Jan-Philipp Jahn

Publications and source records attributed to Jan-Philipp Jahn.

5 recordsLinked to original sources

arXiv2020

Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter

A hybrid system of a semiconductor quantum dot single photon source and a rubidium quantum memory represents a promising architecture for future photonic quantum repeaters. One of the key challenges lies in matching the emission frequency of quantum dots with the transition frequency of rubidium atoms while preserving the relevant emission properties. Here, we demonstrate the bidirectional frequency-tuning of the emission from a narrow-linewidth (close-to-transform-limited) quantum dot. The frequency tuning is based on a piezoelectric strain-amplification device, which can apply significant stress to thick bulk samples. The induced strain shifts the emission frequency of the quantum dot over a total range of $1.15\ \text{THz}$, about three orders of magnitude larger than its linewidth. Throughout the whole tuning process, both the spectral properties of the quantum dot and its single-photon emission characteristics are preserved. Our results show that external stress can be used as a promising tool for reversible frequency tuning of high-quality quantum dots and pave the wave towards the realisation of a quantum dot -- rubidium atoms interface for quantum networking.

cond-mat.mes-hall↗

arXiv2019

Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots

A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over $μ$m-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.

cond-mat.mes-hall↗

arXiv2017

On-demand semiconductor source of 780 nm single photons with controlled temporal wave packets

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at $780\,$nm are generated on-demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multi-photon emission probability ($g^{2}(0)\sim\,0.10-0.15$) at a generation rate up to $10\,$MHz. We observe Raman photons with linewidths as low as $200\,$MHz, narrow compared to the $1.1\,$GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

quant-ph↗

arXiv2017

Simple atomic quantum memory suitable for semiconductor quantum dot single photons

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of $δf$ = 0.66~GHz the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For 50 ns storage time we measure $η_{\textrm{e2e}}^{\textrm{50ns}} = 3.4(3)\%$ \emph{end-to-end efficiency} of the fiber-coupled memory, with an \emph{total intrinsic efficiency} $η_{\textrm{int}} = 17(3)\%$. Straightforward technological improvements can boost the end-to-end-efficiency to $η_{\textrm{e2e}} \approx 35\%$; beyond that increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional readout noise level of $9\cdot 10^{-3}$ photons is dominated by atomic fluorescence, and for input pulses containing on average $μ_{1}=0.27(4)$ photons the signal to noise level would be unity.

quant-ph↗

arXiv2016

An artificial Rb atom in a semiconductor with lifetime-limited linewidth

We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency-matched to the Rb D2-transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.48 GHz) with both resonant and non-resonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible upper state dephasing of the QD transition. We therefore establish a close-to-ideal solid-state source of single photons at a key wavelength for quantum technologies.

quant-ph↗