arXiv subjects

Jarod E. Meyer

Publications and source records attributed to Jarod E. Meyer.

4 recordsLinked to original sources

arXiv2026

Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs

Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe is a narrow bandgap semiconductor with advantageous (opto)electronic properties that has been shown to have a desirable defect-tolerance, enabling bright emission even when grown on highly-dissimilar platforms, and could be leveraged in combination with selective growth for site-selective quantum emitters and low-disorder hybrid nanowire networks. In this work, we achieve site-selective growth of well-faceted and ordered PbSe nanostructures, despite a large 8% lattice mismatch. Structural and morphological characterization reveal that $>$99% of selectively grown islands within 100 nm opening are single-orientation and cube-on-cube oriented with sub-nm root-mean-square surface roughness. Defect analysis showed that 74% of the islands and 86% of the coalesced regions between different mask openings were free of threading dislocations. These PbSe islands achieved equivalent emission in the mid-infrared despite having a higher surface-to-volume ratio than the planar control. Further, we present a gate-tunable two-terminal Josephson junction fabricated from the PbSe nanowires grown with conditions identified in this study. The combination of the accessible selective growth regime, morphological control of island growth and demonstrations of optical and electrical transport properties indicates promise for PbSe SAG as a defect-tolerant scalable quantum platform.

cond-mat.mtrl-sci↗

arXiv2026

Shining light on short-range atomic ordering in semiconductors alloys

The functional properties of semiconductors are typically controlled by tailoring their chemical composition and their state of strain, and by controlling their long-range structural order, including the presence of extended defects such as dislocations. In addition to these approaches, theoretical predictions suggest that short-range order (SRO) of atoms in group-IV semiconductor alloys can modify the bandgap, a defining property of any semiconductor. Herein, a new machine learning enabled, computation-guided methodology for extended X-ray absorption fine structure (EXAFS) analysis of SRO is used to quantify the effects of local atomic order on the bandgap of germanium-tin (GeSn) alloy single crystal nanostructures with well-controlled strain and composition. Correlative analysis of EXAFS and photoluminescence (PL) establishes the relationship between bandgap and the Warren-Cowley short-range order (WC-SRO) parameter of the GeSn alloys. It is further demonstrated that SRO can be tuned over a broad range by post-deposition annealing of the alloy crystals. This work establishes control of SRO as an important design parameter for semiconducting properties and suggests the potential for quantitative measurement and tuning of SRO in other semiconductor alloy systems.

cond-mat.mtrl-sci↗

arXiv2026

Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions

Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR LEDs at room temperature is low, primarily limited by strong nonradiative Auger-Meitner recombination that is only partially overcome with complex quantum-engineered active regions. Here, we exploit the intrinsically low Auger Meitner recombination rates of the IV-VI semiconductors PbSe and PbSnSe, while leveraging the mature III-V platform through the fabrication of hybrid heterojunctions that mediate the ~8% lattice mismatch to GaAs. Electrically injected n-PbSe/p-GaAs LEDs emit at 3.8 um with output powers up to 400 uW under pulsed operation and a peak wall plug efficiency of 0.08% at room temperature, approaching the performance of commercial III-V LEDs at similar wavelengths. Incorporating 7% Sn extends the emission to 5 um in GeSe/PbSnSe/GaAs LEDs with output powers up to 45 uW. Notably, both devices operate despite threading dislocation densities on the order of 1e9/cm^2, underscoring the potential of hybrid IV-VI/III-V heterojunction architectures. We show that combining the complementary advantages of IV-VI and III-V semiconductors offers a simple and efficient mid IR optoelectronic platform for a rapidly expanding set of applications.

cond-mat.mtrl-sci↗

arXiv2025

Heteroepitaxial growth of highly anisotropic $Sb_{2}Se_{3}$ films on GaAs

The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In this work, we synthesize heteroepitaxial thin films of orthorhombic "quasi-1D" $Sb_{2}Se_{3}$ on cubic GaAs(001) using molecular beam epitaxy. Traditionally, the synthesis of anisotropic films with low symmetry materials is challenging due to multiple grain orientations that form. On a macroscopic scale, such a film tends towards isotropic properties, even if individual grains possess anisotropic responses. We achieve epitaxial $Sb_{2}Se_{3}$ grains on pristine homoepitaxial GaAs templates at low temperatures of 180-200 °C. With the $Sb_{2}Se_{3}$ 1D axis aligned in-plane to GaAs [110] and the primary van der Waals direction lying out-of-plane, we find a birefringence of 0.2 between in-plane orthogonal directions and a giant out-of-plane birefringence greater than 1 at telecom wavelengths. Growth at higher temperatures up to 265 °C yields $Sb_{2}Se_{3}$ of an unusual in-plane rotated texture that further enhances the in-plane optical index anisotropy to 0.3.

cond-mat.mtrl-sci↗