arXiv subjects

Jason S. Orcutt

Publications and source records attributed to Jason S. Orcutt.

7 recordsLinked to original sources

arXiv2024

Mechanically-intermixed indium superconducting connections for microwave quantum interconnects

Superconducting coaxial cables represent critical communication channels for interconnecting superconducting quantum processors. Here, we report mechanically-intermixed indium joins to aluminum coaxial cables for low loss quantum interconnects. We describe an ABCD matrix formalism to characterize the total resonator internal quality factor ($Q_i$) and any contact ($R_{cont}$) or shunt resistance ($R_{shunt}$) associated with the mechanically-intermixed indium joins. We present four resonator test systems incorporating three indium join methods over the typical frequency range of interest (3-5.5GHz) at temperatures below $20mK$. We measure high internal quality factor aluminum cables ($Q_i = 1.55 \pm 0.37 x 10^6$) through a push-to-connect indium join of the outer conductor that capacitively couples the inner conductor for reflection measurements. We then characterize the total internal quality factors of modes of a cable resonator with a push-to-connect superconducting cable-splice at the midpoint to find mean $Q_i = 1.40 x 10^6$ and $Q_i = 9.39 x 10^5$ for even and odd-modes respectively and use an ABCD matrix model of the system to extract $R_{cont} = 6x10^{-4} Ω$ for the indium join of the inner conductor. Finally, we demonstrate indium press-mold cable-to-chip connections where the cable-to-chip join is placed at a current node and voltage node through varying on-chip waveguide lengths with mean $Q_i = 1.24 x 10^6$ and $Q_i = 1.07 x 10^6$ respectively to extract $R_{cont} = 8.5x10^{-4} Ω$ and $R_{shunt} = 1.3x10^7 Ω$ for the interface. With these techniques, we demonstrate a set of low-loss methods to join superconducting cables for future quantum

quant-ph↗

arXiv2021

Ultrahigh-$Q$ on-chip silicon-germanium microresonators

We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal $Q >10^8$ for both polarization modes, a nearly order-of-magnitude improvement over that seen in prior integrated Si photonics platforms. The maximum $Q$ is $1.71\pm0.06 \times 10^8$ for the transverse magnetic (TM) polarization mode, corresponding to a loss of $0.39\pm0.02$ dB/m. Together with silicon's strong Kerr nonlinearity and low losses in the optical, microwave and acoustic regimes, our results could lead to the Si$_{1-x}$Ge$_x$/Si architecture unlocking important new avenues for Kerr frequency combs, optomechanics, and quantum transduction.

physics.optics↗

arXiv2020

High-fidelity superconducting quantum processors via laser-annealing of transmon qubits

Scaling the number of qubits while maintaining high-fidelity quantum gates remains a key challenge for quantum computing. Presently, superconducting quantum processors with >50-qubits are actively available. For such systems, fixed-frequency transmons are attractive due to their long coherence and noise immunity. However, scaling fixed-frequency architectures proves challenging due to precise relative frequency requirements. Here we employ laser annealing to selectively tune transmon qubits into desired frequency patterns. Statistics over hundreds of annealed qubits demonstrate an empirical tuning precision of 18.5 MHz, with no measurable impact on qubit coherence. We quantify gate error statistics on a tuned 65-qubit processor, with median two-qubit gate fidelity of 98.7%. Baseline tuning statistics yield a frequency-equivalent resistance precision of 4.7 MHz, sufficient for high-yield scaling beyond 1000-qubit levels. Moving forward, we anticipate selective laser annealing to play a central role in scaling fixed-frequency architectures.

quant-ph↗

arXiv2020

Laser-annealing Josephson junctions for yielding scaled-up superconducting quantum processors

As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present a solution for this problem in fixed-frequency qubit architectures. By systematically adjusting qubit frequencies post-fabrication, we show a nearly ten-fold improvement in the precision of setting qubit frequencies. To assess scalability, we identify the types of 'frequency collisions' that will impair a transmon qubit and cross-resonance gate architecture. Using statistical modeling, we compute the probability of evading all such conditions, as a function of qubit frequency precision. We find that without post-fabrication tuning, the probability of finding a workable lattice quickly approaches 0. However with the demonstrated precisions it is possible to find collision-free lattices with favorable yield. These techniques and models are currently employed in available quantum systems and will be indispensable as systems continue to scale to larger sizes.

quant-ph↗

arXiv2020

Development of Quantum InterConnects for Next-Generation Information Technologies

Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the interconnect, a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a quantum internet poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on Quantum Interconnects that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry and national laboratories is required. This document is a summary from a U.S. National Science Foundation supported workshop held on 31 October - 1 November 2019 in Alexandria, VA. Attendees were charged to identify the scientific and community needs, opportunities, and significant challenges for quantum interconnects over the next 2-5 years.

quant-ph↗

arXiv2016

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimization of silicon traveling wave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.

physics.optics↗

arXiv2014

Photonic Crystal Microcavities in a Microelectronics 45nm SOI CMOS Technology

We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength and 1180nm cavity designs using different cavity implementations due to design rule constraints. For the 1520nm and 1180nm designs, loaded quality factors of 2,000 and 4,000 are measured, and intrinsic quality factors of 100,000 and 60,000 are extracted. We also demonstrate an evanescent coupling geometry which decouples the cavity and waveguide-coupling design.

physics.optics↗