arXiv subjects

Javier Cambiasso

Publications and source records attributed to Javier Cambiasso.

4 recordsLinked to original sources

arXiv2021

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 10$^4$ times brighter photoluminescence than in WSe$_2$ placed on low-refractive-index SiO$_2$ pillars. We show that the key to these observations is the increase on average by a factor of 5 in the quantum efficiency of the emitters coupled to the nano-antennas. This further allowed us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.

cond-mat.mes-hall↗

arXiv2021

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale. Here, we demonstrate strain-induced modifications of the optical properties of mono- and bilayer TMD WSe$_2 $ placed on photonic nano-antennas made from gallium phosphide (GaP). Photoluminescence (PL) from the strained areas of the TMD layer is enhanced owing to the efficient coupling with the confined optical mode of the nano-antenna. Thus, by following the shift of the PL peak, we deduce the changes in the strain in WSe$_2$ deposited on the nano-antennas of different radii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ is observed for WSe$_2$ monolayers. We also estimate that $>3\%$ strain is achieved in bilayers, accompanied with the emergence of a direct bandgap in this normally indirect-bandgap semiconductor. At cryogenic temperatures, we find evidence of the exciton confinement in the most strained nano-scale parts of the WSe$_2$ layers, as also predicted by our theoretical model. Our results, of direct relevance for both dielectric and plasmonic nano-antennas, show that strain in atomically thin semiconductors can be used as an additional parameter for engineering light-matter interaction in nano-photonic devices.

cond-mat.mes-hall↗

arXiv2019

Hybrid plasmonic waveguide coupling of photons from a single molecule

We demonstrate the emission of photons from a single molecule into a hybrid gap plasmon waveguide (HGPW). Crystals of anthracene, doped with dibenzoterrylene (DBT), are grown on top of the waveguides. We investigate a single DBT molecule coupled to the plasmonic region of one of the guides, and determine its in-plane orientation, excited state lifetime and saturation intensity. The molecule emits light into the guide, which is remotely out-coupled by a grating. The second-order auto-correlation and cross-correlation functions show that the emitter is a single molecule and that the light emerging from the grating comes from that molecule. The coupling efficiency is found to be $β_{WG}=11.6(1.5)\%$. This type of structure is promising for building new functionality into quantum-photonic circuits, where localised regions of strong emitter-guide coupling can be interconnected by low-loss dielectric guides.

quant-ph↗

arXiv2016

Plasmonic Hot Electron Transport Driven Site-Specific Surface-Chemistry with Nanoscale Spatial Resolution

Nanoscale localization of electromagnetic fields near metallic nanostructures underpins the fundamentals and applications of plasmonics. The unavoidable energy loss from plasmon decay, initially seen as a detriment, has now expanded the scope of plasmonic applications to exploit the generated hot carriers. However, quantitative understanding of the spatial localization of these hot carriers, akin to electromagnetic near-field maps, has been elusive. Here we spatially map hot-electron-driven reduction chemistry with 15 nanometre resolution as a function of time and electromagnetic field polarization for different plasmonic nanostructures. We combine experiments employing a six-electron photo-recycling process that modify the terminal group of a self-assembled monolayer on plasmonic silver nanoantennas, with theoretical predictions from first-principles calculations of non-equilibrium hot-carrier transport in these systems. The resulting localization of reactive regions, determined by hot carrier transport from high-field regions, paves the way for hot-carrier extraction science and nanoscale regio-selective surface chemistry.

cond-mat.mes-hall↗