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Javier Herrero Martin

Publications and source records attributed to Javier Herrero Martin.

2 recordsLinked to original sources

Paramagnetically driven superconducting re-entrance in Eu-doped infinite layer nickelates

The breakthrough discovery of superconductivity in infinite-layer nickelates, and subsequently in several superconducting nickelates with more complex layered structures, capped a search spanning more than two decades and opened an entirely new field of research. Significant efforts aim to increase the critical temperature, to determine the electronic structure of the system, the underlying pairing mechanism, and the similarities between this system and cuprates - Ni1+ in infinite-layer nickelates being isoelectronic to Cu2+ in high-Tc cuprates. Here, we explore the unique role of magnetic rare earth ions in superconducting Eu-doped NdNiO2. We show that the field-induced re-entrant superconductivity which we evidence in this compound is the result of a delicate balance between the competing effects of the Eu2+ and Nd3+ ions. Our analyses of the extraordinary Hall effect and modeling of the superconducting critical fields demonstrate that the influence of these ions on magneto-transport is only felt when they are polarized by a magnetic field.

cond-mat.supr-con↗

Attosecond state-resolved carrier motion in quantum materials probed by soft X-ray XANES

Recent developments in attosecond technology led to tabletop X-ray spectroscopy in the soft X-ray range, thus uniting the element- and state-specificity of core-level x-ray absorption spectroscopy with the time resolution to follow electronic dynamics in real time. We describe recent work in attosecond technology and investigations into materials such as Si, SiO2, GaN, Al2O3, Ti, TiO2, enabled by the convergence of these two capabilities. We showcase the state-of-the-art on isolated attosecond soft x-ray pulses for x-ray absorption near edge spectroscopy (XANES) to observe the 3d-state dynamics of the semi-metal TiS2 with attosecond resolution at the Ti L-edge (460 eV). We describe how the element- and state-specificity at the transition metal L-edge of the quantum material allows to unambiguously identify how and where the optical field influences charge carriers. This precision elucidates that the Ti:3d conduction band states are efficiently photo-doped to a density of 1.9 x 10^21 cm^-3 and that the light-field induces coherent motion of intra-band carriers across 38% of the first Brillouin zone. Lastly, we describe the prospects with such unambiguous real-time observation of carrier dynamics in specific bonding or anti-bonding states and speculate that such capability will bring unprecedented opportunities towards an engineered approach for designer materials with pre-defined properties and efficiency. Examples are composites of semiconductors and insulators like Si, Ge, SiO2, GaN, BN, quantum materials like graphene, TMDCs, or high-Tc superconductors like NbN or LaBaCuO. Exiting are prospects to scrutinize canonical questions in multi-body physics such as whether the electrons or lattice trigger phase transitions.

cond-mat.mtrl-sci↗