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Javier Sanchez-Yamagishi

Publications and source records attributed to Javier Sanchez-Yamagishi.

4 recordsLinked to original sources

Electrostatic Gating of Ionic Conductance Through Heterogeneous van der Waals Nanopores

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores drilled in van der Waals (vdW) heterostructures with internal gate electrodes made of few layer graphene. These devices deliver up to 10fold current modulation at gate voltages as low as 0.3 V in 10 mM KCl, and 2fold modulation at near physiological 100 mM KCl. Baseline conductance with no gate shows surface charge dominated transport below 100 mM KCl consistent with negatively charged hBN walls and 5 nm opening of the pores. The surface charge and the electrochemical asymmetry introduced by the three electrode configuration govern the device behavior: negative gate voltage (VG) enriches ionic concentrations and enhances current, whereas positive VG induces a local depletion zone that suppresses transport. The current modulation by VG is dependent on the polarity of the transmembrane potential and leads to ion current rectification. Molecular dynamics simulations of a nanopore in a hBN graphene hBN stack reveal confinement and surface charge dependent suppression of relative permittivity of interfacial water. Continuum modeling with radially varying interfacial water permittivity reproduces the asymmetric IV characteristics and explains how the embedded gate sculpts local potential and ion concentrations. By enabling sub 0.5 V control of ionic transport at up to 100 mM salt concentrations, these devices address a key barrier in nanofluidics and open the pathway to low power ionic circuits and biosensing.

cond-mat.mtrl-sci↗

Van der Waals injection-molded crystals

Shaping low-dimensional crystals into precise geometries with low disorder is an outstanding challenge. Here, we present a method to grow single crystals of arbitrary geometry within van der Waals (vdW) materials. By injecting molten material between atomically-flat vdW layers within an SiO2 mold, we produce ultraflat and thin crystals of bismuth, tin, and indium that are shaped as hallbars, rings, and nanowires. The crystals are grown fully encapsulated in hexagonal boron nitride, a vdW material, providing protection from oxidation. Varying the depth of the mold allows us to control the crystal thickness from ten to a hundred nanometers. Structural measurements demonstrate large single-crystals encompassing the entire mold geometry, while transport measurements show reduced disorder scattering. This approach offers a means to produce complex single-crystal nanostructures without the disorder introduced by post-growth nanofabrication.

cond-mat.mtrl-sci↗

Long wavelength local density of states oscillations near graphene step edges

Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long wavelength oscillations in the LDOS are observed with maxima parallel to the step edge. Their wavelength and amplitude are controlled by the energy of the quasiparticles allowing a direct probe of the graphene dispersion relation. We also observe a faster decay of the LDOS oscillations away from the step edge than in conventional metals. This is due to the chiral nature of the Dirac fermions in graphene.

cond-mat.mes-hall↗

STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron and hole puddles, resulting in a finite density of carriers even at the charge neutrality point. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. In this letter, we use scanning tunneling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moire patterns in the topographic images. However, contrary to recent predictions, this conformation does not lead to a sizable band gap due to the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared to those on silicon oxide. This leads to charge fluctuations which are as small as in suspended graphene, opening up Dirac point physics to more diverse experiments than are possible on freestanding devices.

cond-mat.mtrl-sci↗