arXiv subjects

Jawad Ul-Hassan

Publications and source records attributed to Jawad Ul-Hassan.

At least 19 recordsLinked to original sources

arXiv2026

Minute-long quantum coherence enabled by electrical depletion of magnetic noise

Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. Here, we investigate the impact of bias control of an isotopically purified silicon carbide (SiC) p-i-n diode on the coherence of embedded spins. We show that the diode allows for the depletion of not only the electrical, but also the magnetic noise sources. This results in extended relaxation and coherence times of individual electronic and nuclear spins, with Hahn echo times exceeding values reported for single spins in any platform (> 100 seconds). These results demonstrate the importance of materials control and electronic device integration to create highly coherent solid-state quantum technology.

quant-ph↗

arXiv2026

Spectator-transition crosstalk in a spin-3/2 silicon vacancy qudit in silicon carbide revealed by broadband Ramsey interferometry

Color center spins in 4H-SiC offer a rare combination of wafer-scale materials maturity with long spin coherence and chip-level photonics, making them promising building blocks for scalable quantum technologies. In particular, the silicon vacancy hosts an S=3/2 ground state, a native qudit that enables compact encodings and subspace-selective control, but also introduces spectator transitions: short, detuned pulses can coherently drive non-addressed level pairs and create crosstalk. Here we use broadband Ramsey interferometry to reveal and quantify such spectator-transition crosstalk. Experimentally, the Ramsey Fourier spectra display multiple lines beyond the addressed single-quantum transition. Analytically, we map each line to a pairwise energy difference between qudit levels of the rotating-frame Hamiltonian and assign its weight via compact amplitudes set by the prepared state and the microwave pulse parameters, predicting a deterministic six-branch structure. Numerical time-domain propagation with the experimental sampling reproduces the detuning map, and the measured peak positions coincide with the analytic branch lines without frequency fitting. Together these results provide a practical, spectator-aware framework for multilevel control in the silicon vacancy qudit. The approach offers clear guidance to suppress crosstalk or, conversely, to exploit spectator lines, for example as additional constraints for in situ pulse calibration and for phase-sensitive quantum state and process estimation.

quant-ph↗

arXiv2026

Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions

A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with zero-phonon lines in the range 1350-1540 nm. Its four configurations exhibit stable PL spectra characterized by narrow zero-phonon lines. For the two configurations that emit light at the C-band, a Debye-Waller factor in the range 22-25% is estimated. Optically detected magnetic resonance confirms that the Cl-related center is spin active and stable at room temperature with the zero-field splitting in the range of 1.0-1.4 GHz. The combined optical and spin properties suggest this center to be a highly promising candidate for scalable quantum networks.

quant-ph↗

arXiv2025

Localization and coherent control of 25 nuclear spins in Silicon Carbide

Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quantum memories and local qubits registers. To fully leverage this potential precise characterization of the surrounding nuclear-spin environment augmented with refined DFT models is required. In this work, we report angstrom-level 3D localization of 25 nuclear spins around a single V2 center in 4H Silicon Carbide. Utilizing specially placed robust nuclear memory as a highly efficient readout ancilla for readout, we apply correlation based spectroscopy and by selecting multi-spin chains up to length four, we access and characterize extended nuclear spin cluster. Using the coupling map we reconstruct their couplings to the central electron spin and neighboring nuclei. This work paves the way towards advanced quantum register applications on Silicon Carbide platform.

quant-ph↗

arXiv2025

Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout

Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters at low temperatures, the colour centres must be integrated into nanophotonic structures and characterised under cryogenic conditions. Here, we design and fabricate waveguide structures attached with an efficient Dinosaur photonic crystal reflector at one side. The devices show broadband reflection over a range of 60 THz with a peak reflectance above 80 %. Additionally, colour centres were integrated into these structures and characterised at cryogenic conditions. The emission was collected by a tapered-waveguide-tapered-fibre interface. Although the spectral stability of the emitters must be further improved for high excitation powers, the saturation intensity in standard PLE measurements is about 104 kcps. The count rate can be further improved to about 125 kcps with a charge-resonance check measurement scheme. To highlight the relevance of our devices, we theoretically show that these count rates enable optical single-shot readout with a fidelity exceeding 98 %.

quant-ph↗

arXiv2025

Broadband Fourier transform spectroscopy of quantum emitters photoluminescence with sub-nanosecond temporal resolution

The spectral characterization of quantum emitter luminescence over broad wavelength ranges and fast timescales is important for applications ranging from biophysics to quantum technologies. Here we present the application of time-domain Fourier transform spectroscopy, based on a compact and stable birefringent interferometer coupled to low-dark-count superconducting single-photon detectors, to the study of quantum emitters. We experimentally demonstrate that the system enables spectroscopy of quantum emitters over a broad wavelength interval from the near-infrared to the telecom range, where grating-based spectrometers coupled to InGaAs cameras are typically noisy and inefficient. We further show that the high temporal resolution of single-photon detectors, which can be on the order of tens of picoseconds, enables the monitoring of spin-dependent spectral changes on sub-nanosecond timescales.

quant-ph↗

arXiv2025

Mesoscopic cavity quantum electrodynamics with phase-disordered emitters in a Kerr nonlinear resonator

The field of cavity quantum electrodynamics (QED) has seen a recent resurgence of interest in few- and many-body physics owing to the realization that the breaking of symmetries and the presence of disorder can give rise to entirely new phenomena. Here we demonstrate a few-emitter cavity QED system capable of realizing new Hamiltonians in quantum optics based on breaking of symmetries and the realization of an in situ Kerr nonlinearity. Our experiment relies on a high-finesse silicon carbide whispering gallery mode resonator hosting an ensemble of silicon vacancy color centers. The simultaneous presence of spectral and spatial disorder of the mesoscopic atom system gives rise to emergent chirality, and the optical nonlinearity of the silicon carbide host crystal enables the observation of atom-photon correlations induced by a four-photon nonlinear process. This work demonstrates the potential for solid state defect systems to realize emerging proposals and to study fundamental physics in quantum electrodynamics.

quant-ph↗

arXiv2025

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity

Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate for implementing a spin-photon interface. These interfaces are an important building block of quantum networks, which in turn promise to enable secure communication and distributed quantum computing. To achieve this goal, the rate of coherently scattered photons collected from a single emitter needs to be maximized, which can be achieved by interfacing the emitter with an optical cavity. In this work, we integrate V2 centers inside a SiC membrane into a fiber-based Fabry-Pérot microcavity. We find that SiC lends itself well to membrane fabrication, as evidenced by low surface roughness $σ_{\mathrm{RMS}}$ ~ 400 pm, high reproducibility, and consequentially a high cavity finesse F ~ 40 000. At cryogenic temperatures, we observe individual emitters coupling to cavity modes. We confirm their single-emitter character by measuring the second-order autocorrelation function and investigate the Purcell factor by measuring the optical lifetime as a function of the cavity-emitter detuning. We find a 13.3-fold enhancement of photons scattered into the zero-phonon line (ZPL), which could be further increased by using optimized mirror coatings, potentially opening the path towards deterministic spin-photon interaction.

quant-ph↗

arXiv2024

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor industry. Here, we study the behaviour of single silicon vacancy (V2) colour centres in a metal-semiconductor (Au/Ti/4H-SiC) epitaxial wafer device, operating in a Schottky diode configuration. We explore the depletion of free carriers in the vicinity of the defect, as well as electrical tuning of the defect optical transition lines. By detecting single charge traps, we investigate their impact on V2 optical line width. Additionally, we investigate the charge-photon-dynamics of the V2 centre and find its dominating photon-ionisation processes characteristic rate and wavelength dependence. Finally, we probe the spin coherence properties of the V2 system in the junction and demonstrate several key protocols for quantum network applications. Our work shows the first demonstration of low temperature integration of a Schottky device with optical microstructures for quantum applications and paves the way towards fundamentally scalable and reproducible optical spin defect centres in solids.

quant-ph↗

arXiv2024

Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna

Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of 34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption linewidth below 80MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.

quant-ph↗

arXiv2024

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rmμm$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rmμm$. For silicon vacancy centres in thinner membranes down to $0.25\,\rmμm$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.

quant-ph↗

arXiv2024

Precise characterization of a silicon carbide waveguide fiber interface

Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of photons to a well defined waveguide mode can significantly enhance the photon detection efficiency. In addition, interfacing this waveguide to a classical fiber network is of similar importance to detect the photons and perform experiments. Here, we show a waveguide fiber interface in SiC. By careful measurements we determine efficiencies exceeding 93 % for the transfer of photons from SiC nanobeams to fibers. We use this interface to create a bright single photon source based on waveguide integrated V2 defects in 4H-SiC and achieve an overall photon count rate of 181 kilo-counts per second. We observe and quantify the strain induced shift of the ground state spin states and demonstrate coherent control of the electron spin with a coherence time of T2=42.5 $\rmμ$s.

quant-ph↗

arXiv2024

Effective uniaxial dielectric function tensor and optical phonons in ($\bar{2}01$)-plane oriented $β$-Ga$_2$O$_3$ films with equally-distributed six-fold rotation domains

Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-infrared ellipsometry data from undoped and electrically insulating films with an effective uniaxial dielectric tensor based on projections of all phonon modes within the rotation domains parallel and perpendicular to the sample normal, i.e., to the reciprocal lattice vector $\mathbf{g}_{\bar{2}01}$. Two effective response functions are described by model, and found sufficient to calculate ellipsometry data that best-match measured ellipsometry data from a representative film. We propose to render either effective dielectric functions, or inverse effective dielectric functions, each separately for electric field directions parallel and perpendicular to $\mathbf{g}_{\bar{2}01}$, by sums of Lorentz oscillators, which permit to determine either sets of transverse optical phonon mode parameters, or sets of longitudinal optical phonon mode parameters, respectively. Transverse optical modes common to both dielectric functions can be traced back to single crystal modes with $B_{\mathrm{u}}$ character, while modes with $A_{\mathrm{u}}$ character only appear within the dielectric function for polarization perpendicular to the sample surface. The thereby obtained parameter sets reveal all phonon modes anticipated from averaging over the six-fold rotation domains of single crystal $β$-Ga$_2$O$_3$, but with slightly shifted transverse optical, and completely different longitudinal optical phonon modes.

cond-mat.mtrl-sci↗

arXiv2024

High fidelity optical readout of a nuclear spin qubit in Silicon Carbide

Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a repetitive readout technique. We demonstrate up to 99.5$\,\%$ readout fidelity and 99$\,\%$ for state preparation. Using this efficient readout we initialise the nuclear spin by measurement and demonstrate its Rabi and Ramsey nutation. Finally, we use the nuclear spin as a long lived memory for quantum sensing application of weakly coupled diatomic nuclear spin bath.

quant-ph↗

arXiv2023

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.

quant-ph↗

arXiv2023

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a 4 level sensor, we identify several groups of $^{29}$Si and $^{13}$C nuclear spins through their hyperfine interaction. We extract the major components of their hyperfine coupling via optical detected nuclear resonance, and assign them to shell groups in the crystal via the DFT simulations. We utilise the ground state level anti-crossing of the electron spin for dynamic nuclear polarization and achieve a nuclear spin polarization of up to $98\pm6\,\%$. We show that this scheme can be used to detect the nuclear magnetic resonance signal of individual spins and demonstrate their coherent control. Our work provides a detailed set of parameters for future use of SiC as a multi-qubit memory and quantum computing platform.

quant-ph↗

arXiv2023

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of negatively charged $\rm V_{Si}^-$ center in 4H-SiC by an in-depth electronic fine structure modeling including intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to 3-photon GHZ/cluster states are readily within reach using the existing nanophotonic cavity technology.

quant-ph↗

arXiv2023

Characterization of single shallow silicon-vacancy centers in 4H-SiC

Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin polarization, affecting the optically detected magnetic resonance (ODMR) signal. This makes it essential to characterize these centers. Here we present the relevant spin properties of such centers. ODMR with a contrast of up to 6 %, which is better than the state of the art, allowed us to determine the zero field splitting, which is relevant for most sensing applications. We also present intensity-correlation data to verify that the signal originates from a single center and to extract transition rates between different electronic states.

quant-ph↗