arXiv subjects

Jayakanth Ravichandran

Publications and source records attributed to Jayakanth Ravichandran.

At least 37 records · Page 2Linked to original sources

arXiv2024

Growth of VO2-ZnS Thin Film Cavity for Adaptive Thermal Emission

Low-weight, passive, thermal-adaptive radiation technologies are needed to maintain an operable temperature for spacecraft while they experience various energy fluxes. In this study, we used a thin-film coating with the Fabry-Perot (FP) effect to enhance emissivity contrast (Δε) between VO2 phase-change states. This coating utilizes a novel hybrid material architecture that combines VO2 with a mid- and long-wave infrared transparent chalcogenide, zinc sulfide (ZnS), as a cavity spacer layer. We simulated the design parameter space to obtain a theoretical maximum Δε of 0.63 and grew prototype devices. Using X-ray diffraction, Raman spectroscopy, and Fourier Transform Infrared (FTIR) Spectroscopy, we determined that an intermediate buffer layer of TiO2 is necessary to execute the crystalline growth of monoclinic VO2 on ZnS. Through temperature-dependent FTIR spectroscopy measurements, our fabricated devices demonstrated FP-cavity enhanced adaptive thermal emittance.

physics.optics↗

arXiv2024

Bifunctional Noble Metal-free Ternary Chalcogenide Electrocatalysts for Overall Water Splitting

Hydrogen has been identified as a clean, zero carbon, sustainable, and promising energy source for the future, and electrochemical water splitting for hydrogen production is an emission-free, efficient energy conversion technology. A major limitation of this approach is the unavailability of efficient, abundant, inexpensive catalysts, which prompts the need for new catalytic materials. Here, we report the synthesis and electrocatalytic properties of a novel transition metal-based ternary chalcogenide family, LaMS$_3$ (M = Mn, Fe, Co, Ni). Powder X-ray diffraction confirms the phase purity of these materials, while composition analysis using energy dispersive spectroscopy (EDS) confirms the presence of the stoichiometric ratio of elements in these compounds. X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) were used to study the chemical states on the surface and in bulk, respectively. These materials exhibit bifunctional catalytic activity towards the two half-reactions of the water-splitting process, with LaNiS$_3$ being the most active material for both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The LaMS$_3$ compounds show long-term stability with negligible change in the overpotential at a constant current density of 10 mA cm$^{-2}$ over 18 hours of measurements. As compared to the corresponding ternary oxides, the LaMS$_3$ materials exhibit higher activity and significantly lower Tafel slopes. The ability to catalyze both half-reactions of water electrolysis makes these materials promising candidates for bifunctional catalysts and presents a new avenue to search for high-efficiency electrocatalysts for water splitting.

physics.chem-ph↗

arXiv2024

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth

Using machine learning methods, we explore different types of domain walls in the recently unveiled single-element ferroelectric, the bismuth monolayer [Nature 617, 67 (2023)]. Remarkably, our investigation reveals that the charged domain wall configuration exhibits lower energy compared to the uncharged domain wall structure. We also demonstrate that the experimentally discovered tail-to-tail domain wall maintains topological interfacial states caused by the change in the Z_2 number between ferroelectric and paraelectric states. Interestingly, due to the intrinsic built-in electric fields in asymmetry DW configurations, we find that the energy of topological interfacial states splits, resulting in an accidental band crossing at the Fermi level. Our study suggests that domain walls in two-dimensional bismuth hold potential as a promising platform for the development of ferroelectric domain wall devices.

cond-mat.mtrl-sci↗

arXiv2024

Molten flux growth of single crystals of quasi-1D hexagonal chalcogenide BaTiS3

BaTiS3, a quasi-1D complex chalcogenide, has gathered considerable scientific and technological interest due to its giant optical anisotropy and electronic phase transitions. However, the synthesis of high-quality BaTiS3 crystals, particularly those featuring crystal sizes of millimeters or larger, remains a challenge. Here, we investigate the growth of BaTiS3 crystals utilizing a molten salt flux of either potassium iodide, or a mixture of barium chloride and barium iodide. The crystals obtained through this method exhibit a substantial increase in volume compared to those synthesized via the chemical vapor transport method, while preserving their intrinsic optical and electronic properties. Our flux growth method provides a promising route towards the production of high-quality, large-scale single crystals of BaTiS3, which will greatly facilitate advanced characterizations of BaTiS3 and its practical applications that require large crystal dimensions. Additionally, our approach offers an alternative synthetic route for other emerging complex chalcogenides.

cond-mat.mtrl-sci↗

arXiv2024

Hydrogen is not necessary for superconductivity in topotactically reduced nickelates

A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a topotactic reaction with a strongly reducing agent such as CaH$_2$. Recent studies, both experimental and theoretical, have introduced the possibility that the incorporation of hydrogen from the reducing agent into the nickelate lattice may be critical for the superconductivity. In this work, we use secondary ion mass spectrometry to examine superconducting La$_{1-x}$X$_x$NiO$_2$ / SrTiO$_3$ (X = Ca and Sr) and Nd$_6$Ni$_5$O$_{12}$ / NdGaO$_3$ films, along with non-superconducting NdNiO$_2$ / SrTiO$_3$ and (Nd,Sr)NiO$_2$ / SrTiO$_3$. We find no evidence for extensive hydrogen incorporation across a broad range of samples, including both superconducting and non-superconducting films. Theoretical calculations indicate that hydrogen incorporation is broadly energetically unfavorable in these systems, supporting our conclusion that hydrogen incorporation is not generally required to achieve a superconducting state in layered square-planar nickelates.

cond-mat.supr-con↗

arXiv2024

Epitaxial rare-earth doped complex oxide thin films for infrared applications

Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitable for scalable quantum memories, on-chip lasers and amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and quantum memory applications. We perform extensive structural and chemical characterization to probe the crystallinity of the films and the doping behavior. Low temperature photoluminescence measurements show sharp radiative transitions in the short-wave infrared range of 1.75 - 2 μm.

physics.optics↗

arXiv2024

Infrared Optical Anisotropy in Quasi-1D Hexagonal Chalcogenide BaTiSe3

Polarimetric infrared detection bolsters IR thermography by leveraging the polarization of light. Optical anisotropy, i.e., birefringence and dichroism, can be leveraged to achieve polarimetric detection. Recently, giant optical anisotropy was discovered in quasi-1D narrow-bandgap hexagonal perovskite sulfides, A1+xTiS3, specifically BaTiS3[1,2] and Sr9/8TiS3[3,4]. In these materials, the critical role of atomic-scale structure modulations[4,5] in the unconventional electrical[5,6], optical[7,8], and thermal[7,9] properties raises the broader question of other materials that belong to this family. To address this issue, for the first time, we synthesized high-quality single crystals of a largely unexplored member of the A1+xTiX3 (X = S, Se) family, BaTiSe3. Single-crystal X-ray diffraction determined the room-temperature structure with the P31c space group, which is a superstructure of the earlier reported[10] P63/mmc structure. The crystal structure of BaTiSe3 features antiparallel c-axis displacements similar to BaTiS3,[2] but is of lower symmetry. Polarization-resolved Raman and Fourier transform infrared (FTIR) spectroscopy were used to characterize the optical anisotropy of BaTiSe3, whose refractive index along the ordinary (perpendicular to c) and extraordinary (parallel to c) optical axes was quantitatively determined by combining ellipsometry studies with FTIR. With a giant birefringence Δn~0.9, BaTiSe3 emerges as a new candidate for miniaturized birefringent optics for mid-wave infrared to long-wave infrared imaging.

cond-mat.mtrl-sci↗

arXiv2023

A hybrid pulsed laser deposition approach to grow thin films of chalcogenides

Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, we report a novel approach to grow chalcogenides - hybrid pulsed laser deposition - wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. Our work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.

cond-mat.mtrl-sci↗

arXiv2023

Photoconductive Effects in Single Crystals of BaZrS$_3$

Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.

physics.app-ph↗

arXiv2023

Colossal optical anisotropy from atomic-scale modulations

In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses.

physics.optics↗

arXiv2023

Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3

Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal-to-insulator or charge density wave (CDW) transitions such as VO2 and 1T-TaS2 have demonstrated voltage oscillations due to their robust bi-state resistive switching behavior with some basic neuronal characteristics. BaTiS3 is a small bandgap ternary chalcogenide that has recently reported the emergence CDW order below 245 K. Here, we report on the discovery of DC voltage / current-induced reversible threshold switching in BaTiS3 devices between a CDW phase and a room temperature semiconducting phase. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz has been demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device performance. Our findings establish BaTiS3 as a promising CDW material for future energy-efficient electronics, especially for neuromorphic computing.

cond-mat.mtrl-sci↗

arXiv2022

A Polymeric Planarization Strategy for Versatile Multi-terminal Electrical Transport Studies on Small, Bulk Quantum Materials

We report a device fabrication strategy of making multi-terminal electrical contacts on small (< 1 mm) bulk quantum materials using lithography-based techniques for electrical transport studies. The crystals are embedded in a polymeric medium to planarize the top surface, and then standard lithography and microfabrication techniques are directly applied to form electrodes with various geometries. This approach overcomes the limitations of crystal thickness and lateral dimensions on establishing electrical contacts. We use low stress polymers to minimize the extrinsic thermal strain effect at low temperatures, which allow reliable transport measurements on quantum materials that are sensitive to strain. The crystal surface planarization method has enabled electronic transport studies such as in-plane anisotropy, Hall measurements on small, bulk BaTiS3 (BTS) crystals, and provides unique opportunities for two-dimensional (2D) heterogeneous integration on three-dimensional (3D) / quasi-one-dimensional (quasi-1D) bulk materials. Our strategy is general for many small, non-exfoliable crystals of newly synthesized quantum materials and paves the way for performing versatile transport studies on those novel materials.

cond-mat.mtrl-sci↗

arXiv2022

Unconventional Charge-density-wave Order in a Dilute d-band Semiconductor

Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifically at the limit of low carrier concentration region, is uncommon. Here, we combine electrical transport, synchrotron X-ray diffraction and optical spectroscopy to discover CDW order in a quasi-one-dimensional (1D), dilute d-band semiconductor, BaTiS3, which suggests the existence of strong electron-phonon coupling. The CDW state further undergoes an unusual transition featuring a sharp increase in carrier mobility. Our work establishes BaTiS3 as a unique platform to study the CDW physics in the dilute filling limit to explore novel electronic phases.

cond-mat.mtrl-sci↗

arXiv2021

Modeling Temperature, Frequency, and Strain Effects on the Linear Electro-Optic Coefficients of Ferroelectric Oxides

An electro-optic modulator offers the function of modulating the propagation of light in a material with electric field and enables seamless connection between electronics-based computing and photonics-based communication. The search for materials with large electro-optic coefficients and low optical loss is critical to increase the efficiency and minimize the size of electro-optic devices. We present a semi-empirical method to compute the electro-optic coefficients of ferroelectric materials by combining first-principles density-functional theory calculations with Landau-Devonshire phenomenological modeling. We apply the method to study the electro-optic constants, also called Pockels coefficients, of three paradigmatic ferroelectric oxides: BaTiO3, LiNbO3, and LiTaO3. We present their temperature-, frequency- and strain-dependent electro-optic tensors calculated using our method. The predicted electro-optic constants agree with the experimental results, where available, and provide benchmarks for experimental verification.

cond-mat.mtrl-sci↗

arXiv2021

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses.

cond-mat.mtrl-sci↗

arXiv2021

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface the films are polycrystalline with a large number of extended defects suggesting the potential for further improvement in growth. X-Ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS3 films thus far. Our study opens up opportunities to realize epitaxial thin films, heterostructures, and superlattices of chalcogenide perovskites to probe fundamental physical phenomena and the resultant electronic and photonic device technologies.

cond-mat.mtrl-sci↗

arXiv2021

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.

cond-mat.mtrl-sci↗

arXiv2021

In situ Monitoring of Composition and Sensitivity to Growth Parameters of Pulsed Laser Deposition

Complex oxide perovskites have been widely studied for their diverse functional properties. When dimensionally reduced to epitaxial thin films and heterostructures these properties are frequently tunable, and the symmetry-breaking inherent to thin film structures can result in the emergence of new, novel, phenomena and properties. However, the ability to control and harness these structures relies on an atomic-level understanding and control of the growth process, made challenging by the lack of suitable in situ compositional characterization tools. In this work, the compositional-dependence of SrTiO3 on pulsed laser deposition growth parameters is investigated with in situ Auger electron spectroscopy and ex situ thin film x-ray diffraction, and verified with a simple escape depth model. We show that this is a suitable technique for monitoring subtle compositional shifts occurring during the deposition process, with broad implications for the continued development of thin film synthesis techniques.

cond-mat.mtrl-sci↗