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Jayss Marshall

Publications and source records attributed to Jayss Marshall.

13 recordsLinked to original sources

Localized Thermometry via Dayem Bridges Integrated on Superconducting Qubit Chips

Accurate knowledge of the on-chip temperature is essential for understanding and optimizing the performance of superconducting qubits, yet direct thermometry at millikelvin temperatures remains challenging. While qubits themselves are sensitive to the temperature of their environment, other factors may affect the qubits` effective temperature, and using them as thermometers with any accuracy requires specialized measurement protocols and qubit designs, limiting their practicality for routine diagnostics and adding complex infrastructure to any hardware testing apparatus. Here we demonstrate a complementary on-chip thermometry method based on superconducting Dayem bridges that are integrated on the same chip as transmon qubits. By extracting the critical current of the Dayem bridge from I-V measurements, we obtain a local, quantitative measure of the chip temperature without the need for microwave calibration or qubit-specific control sequences. To demonstrate the utility of the Dayem bridges as thermometers, we fabricate them in-situ with qubits on the same chip, calibrate the Dayem bridge critical current as a function of temperature, and characterize its resolution and stability at cryogenic temperatures. We additionally perform simultaneous measurements of the Dayem bridge thermometer and qubit excited-state population, and show agreement over the relevant temperature range, validating the method against established qubit thermometry. Furthermore, we correlate the independently measured chip temperature with qubit energy relaxation and dephasing times, demonstrating the utility of this approach for diagnosing temperature-dependent decoherence mechanisms. These results establish integrated Dayem bridges as a simple, non-invasive, and scalable tool for cryogenic hardware development, and on chip thermometry in superconducting quantum circuits.

quant-ph

Magneto-optical study of Nb thin films for superconducting qubits

Among the recognized sources of decoherence in superconducting qubits, the spatial inhomogeneity of the superconducting state and the possible presence of magnetic-flux vortices remain comparatively underexplored. Niobium is commonly used as a structural material in transmon qubits that host Josephson junctions, and excess dissipation anywhere in the transmon can become a bottleneck that limits overall quantum performance. The metal/substrate interfacial layer may simultaneously host pair-breaking loss channels (e.g., two-level systems, TLS) and control thermal transport, thereby affecting dissipation and temperature stability. Here, we use quantitative magneto-optical imaging of the magnetic-flux distribution to characterize the homogeneity of the superconducting state and the critical current density, $j_{c}$, in niobium films fabricated under different sputtering conditions. The imaging reveals distinct flux-penetration regimes, ranging from a nearly ideal Bean critical state to strongly nonuniform thermo-magnetic dendritic avalanches. By fitting the measured magnetic-induction profiles, we extract $j_{c}$ and correlate it with film physical properties and with measured qubit internal quality factors. Our results indicate that the Nb/Si interlayer can be a significant contributor to decoherence and should be considered an important factor that must be optimized.

cond-mat.supr-con

Oxygen distribution and segregation at grain boundaries in Nb and Ta-encapsulated Nb thin films for superconducting qubits

We report on atomic-scale analyses of oxygen distribution and segregation at grain boundaries (GBs) of Nb and Ta-encapsulated Nb (Ta/Nb) thin films for superconducting qubits using atom-probe tomography (APT) and transmission electron microscopy (TEM). We observe oxygen segregation at grain boundaries (GBs) relative to the oxygen concentration within the grains for both Nb and Ta-capped Nb thin films for superconducting qubits and find that higher oxygen concentration in the interior of Nb grains lead to greater oxygen segregation levels at GBs. This finding emphasizes that controlling oxygen impurities in Nb during film deposition and fabrication processing is important to reduce the level of oxygen segregation at GBs in Nb. The enrichment factor (Cgb/Cgrain) for oxygen segregation at GBs in Nb is 2.7 (error bar: 0.3) for Nb films, and Ta-capped Nb thin films exhibit slightly reduced Nb GB enrichment factors of 2.3 (error bar: 0.3) while GBs in the Ta capping layer itself possess higher enrichment factors of 3.0 (error bar: 0.3). We hypothesize that the Ta capping layer can trap oxygen and thereby affect oxygen in-diffusion and segregation at GBs in the underlying Nb thin films. Finally, we find that increases in the oxygen concentration in both Nb grains and GBs correlate with a suppression in the critical temperature for superconductivity (Tc). Together, our comparative chemical and charge transport property analyses provide atomic-scale insights into a potential mechanism contributing to decoherence in superconducting qubits.

cond-mat.supr-con

Identifying Materials-Level Sources of Performance Variation in Superconducting Transmon Qubits

The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various nondestructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T$_1$ lifetime across different devices. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices, but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.

quant-ph

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.

cond-mat.mtrl-sci

Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation

We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.

quant-ph

Quasiparticle spectroscopy in technologically-relevant niobium using London penetration depth measurements

London penetration depth was measured in niobium foils, thin films, single crystals, and superconducting radio-frequency (SRF) cavity pieces cut out from different places. The low-temperature (T<Tc/3) variation, sensitive to the low-energy quasiparticles with states inside the superconducting gap, differs dramatically between different types of samples. With the help of phenomenological modeling, we correlate these different behaviors with known pair-breaking mechanisms and show that such measurements may help distinguish between different pair-breaking mechanisms, such as niobium hydrides and two-level systems (TLS). The conclusions also apply to SRF cavities when tracking the temperature-dependent quality factor and the resonant frequency.

cond-mat.supr-con

Anisotropic superconductivity of niobium based on its response to non-magnetic disorder

Niobium is one of the most studied superconductors, both theoretically and experimentally. It is tremendously important for applications, and it has the highest superconducting transition temperature, $T_{c}=9.33$ K, of all pure metals. In addition to power applications in alloys, pure niobium is used for sensitive magneto-sensing, radio-frequency cavities, and, more recently, as circuit metallization layers in superconducting qubits. A detailed understanding of its electronic and superconducting structure, especially its normal and superconducting state anisotropies, is crucial for mitigating the loss of quantum coherence in such devices. Recently, a microscopic theory of the anisotropic properties of niobium with the disorder was put forward. To verify theoretical predictions, we studied the effect of disorder produced by 3.5 MeV proton irradiation of thin Nb films grown by the same team and using the same protocols as those used in transmon qubits. By measuring the superconducting transition temperature and upper critical fields, we show a clear suppression of $T_{c}$ by potential (non-magnetic) scattering, which is directly related to the anisotropic order parameter. We obtain a very close quantitative agreement between the theory and the experiment.

cond-mat.supr-con

Characterization of Nb films for superconducting qubits using phase boundary measurements

Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits. Consequently, a significant effort is required to develop and qualify processes that mitigate defects in Nb films. As the fabrication of complete superconducting qubits and their characterization at millikelvin temperatures is a time and resource intensive process, it is desirable to have measurement tools that can rapidly characterize the properties of films and evaluate different treatments. Here we show that measurements of the variation of the superconducting critical temperature $T_c$ with an applied external magnetic field $H$ (of the phase boundary $T_c - H$) performed with very high resolution show features that are directly correlated with the structure of the Nb films. In combination with x-ray diffraction measurements, we show that one can even distinguish variations quality and crystal orientation of the grains in a Nb film by small but reproducible changes in the measured superconducting phase boundary.

cond-mat.supr-con

Quasiparticle spectroscopy, transport, and magnetic properties of Nb films used in superconducting transmon qubits

Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. We study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circuits such as those used in quantum computers. The films show outstanding superconducting transition temperature of $T_{c}=9.35$ K and a fairly clean superconducting gap, along with superfluid density enhanced at intermediate temperatures. These observations are consistent with the recent theory of anisotropic strong-coupling superconductivity in Nb. However, the response to the magnetic field is complicated, exhibiting significantly irreversible behavior and insufficient heat conductance leading to thermo-magnetic instabilities. These may present an issue for further improvement of transmon quantum coherence. Possible mitigation strategies are discussed.

cond-mat.supr-con

Multi-modal electron microscopy study on decoherence sources and their stability in Nb based superconducting qubit

Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive studies in 3D superconducting radio frequency (SRF) cavities. However, it is unclear how the microstructure and chemistry of the interface structures change during heat treatment. To address this knowledge gap, we comprehensively characterized Nb films deposited on Si wafers by physical vapor deposition, including (1) an Nb film from a transmon and (2) an Nb film without any patterning step, using an aberration-corrected transmission electron microscope. Both Nb films exhibit columnar growth with strong [110] textures. There is a double layer between the Nb film and Si substrate, which are amorphous niobium silicides with different Nb and Si concentrations. After in-situ heating of the heterostructure at 360°C inside the microscope, the composition of the double layers at the Nb-Si interface remains almost the same despite different thickness changes. The initial amorphous niobium oxide layer on Nb surface decomposes into face-centered cubic Nb nanograins in the amorphous Nb-O matrix upon heating.

cond-mat.mtrl-sci

Superconducting Caps for Quantum Integrated Circuits

We report on the fabrication and metrology of superconducting caps for qubit circuits. As part of a 3D quantum integrated circuit architecture, a cap chip forms the upper half of an enclosure that provides isolation, increases vacuum participation ratio, and improves performance of individual resonant elements. Here, we demonstrate that such caps can be reliably fabricated, placed on a circuit chip, and form superconducting connections to the circuit.

physics.app-ph

Superconducting Through-Silicon Vias for Quantum Integrated Circuits

We describe a microfabrication process for superconducting through-silicon vias appropriate for use in superconducting qubit quantum processors. With a sloped-wall via geometry, we can use non-conformal metal deposition methods such as electron-beam evaporation and sputtering, which reliably deposit high quality superconducting films. Via superconductivity is validated by demonstrating zero via-to-via resistance below the critical temperature of aluminum.

physics.app-ph